Chalcogenide memory cell with a plurality of chalcogenide electrodes

Claim 2

A memory cell, comprising: a first layer comprising phase changing material; a second layer comprising phase changing material; a dielectric layer coupled to said first and second layers, said dielectric layer including an opening defining a pore; and a volume of phase changing material contained within said pore and electrically coupled to said first and second layers, wherein a cross sectional area of said first layer and a cross sectional area of said second layer are both greater than a cross sectional area of said pore.

Claim 3

The memory cell of claim 1, wherein said phase changing material is selected from the group consisting of Se, Te, Ge, Sb and mixtures or alloys thereof.

Claim 4

The memory cell of claim 2, wherein said phase changing material includes Te, Ge and Sb in the ratio Te a Ge b Sb 100- (a+b) where the subscripts are in atomic percentages which total 100% of the constituent elements and a≦70 and 15≦b<50.

Claim 5

The memory cell of claim 3, wherein 40≦a≦60 and 17≦b≦44.

Claim 6

A memory cell array, comprising: an addressing matrix; and a plurality of memory cells operably coupled to said addressing matrix, each memory cell including: an upper electrode comprising phase changing material; a lower electrode comprising phase changing material; a dielectric layer positioned between said upper and lower electrodes and including an opening defining a pore; and a volume of material contained within said pore operably coupled to said upper and lower electrodes wherein a cross sectional area of said upper electrode and a cross sectional area of said lower electrode are both greater than a cross sectional area of said pore.

Claim 7

A memory cell array, comprising: an addressing matrix; and a plurality of memory cells operably coupled to said addressing matrix, each memory cell including: an upper electrode comprising phase changing material; a lower electrode comprising phase changing material; a dielectric layer positioned between said upper and lower electrodes and including an opening defining a pore; and a volume of material contained within said pore operably coupled to said upper and lower electrodes wherein a cross sectional area of said upper electrode and a cross sectional area of said lower electrode are both greater than a cross sectional area of said pore.

Claim 8

The memory cell array of claim 5, wherein said volume of material contained within said pore comprises phase changing material.

Claim 9

The memory cell array of claim 6, wherein said volume of phase changing material contained within said pore is formed as a portion of said upper electrode.

Claim 10

The memory cell array of claim 5, wherein each said memory cell further comprises an access device.

Claim 11

The memory cell array of claim 8, wherein each said access device comprises a diode.

Claim 12

The memory cell array of claim 5 wherein said phase changing material is selected from the group consisting of Se, Te, Ge, Sb and mixtures or alloys thereof.

Claim 13

The memory cell array of claim 10, wherein said phase changing material includes Te, Ge and Sb in the ratio Te a Ge b Sb 100- (a⃡b) where the subscripts are in atomic percentages which total 100% of the constituent elements and a ≦70 and 15≦b≦50.

Claim 14

The memory cell array of claim 11, wherein 40≦a ≦60 and 17≦b≦44.

Claim 15

A memory cell, comprising: a diode assembly formed of a plurality of vertically aligned material layers within said memory cell; and a resistive assembly arranged in vertical alignment with said diode assembly, said resistive assembly in electrical communication with said diode assembly, said resistive assembly comprising: a lower electrode comprising phase changing material; a dielectric element positioned above said lower electrode; and an upper electrode comprising phase changing material positioned above said dielectric element; wherein said dielectric element comprises an aperture configured to restrict an area of electrical communication between said upper and lower electrodes and wherein a cross sectional area of said lower electrode and a cross sectional area of said upper electrode are both greater than a cross sectional area of said aperture.

Claim 16

A memory cell, comprising: a diode assembly formed of a plurality of vertically aligned material layers within said memory cell; and a resistive assembly arranged in vertical alignment with said diode assembly, said resistive assembly in electrical communication with said diode assembly, said resistive assembly comprising: a lower electrode comprising phase changing material; a dielectric element positioned above said lower electrode; and an upper electrode comprising phase changing material positioned above said dielectric element; wherein said dielectric element comprises an aperture configured to restrict an area of electrical communication between said upper and lower electrodes and wherein a cross sectional area of said lower electrode and a cross sectional area of said upper electrode are both greater than a cross sectional area of said aperture.

Claim 17

The memory cell of claim 13, wherein one of said upper and lower electrodes extends through said aperture in said dielectric layer.

Claim 18

The memory cell of claim 13, wherein said lower electrode, said resistive dielectric resistive element, and said upper electrode are each resistive horizontally disposed and are each generally vertically aligned with said diode assembly.