Patent US4066699A successfully refreshed from Google Patents.
US5801418A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High voltage power integrated circuit with level shift operation and without metal crossover
Assignee: Infineon Technologies Americas Corp
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Filing: 1997-02-03
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Granted: 1998-09-01
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Expires: 2017-02-03
Abstract
Abstract Level shift devices are formed in the high voltage termination region of an integrated circuit. The level shift devices provide a connection between the higher voltage, floating circuit and a ground referenced lower voltage circuit. The structure of the level shift devices eliminates the need for a high voltage connector to cross over the low voltage connector.
Inventors
- 👤 Niraj Ranjan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 14:20
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/65; H10D84/00; H10D84/80; H10D84/811; H10D84/817; H10D30/601; H10D30/603; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D62/109; H10D89/00; H10D89/211
Claims Analysis
Total Claims: 78
Claim 1
Independent Claim
353 words
A level shift device for electrically coupling a floating voltage circuit with a relatively lower voltage circuit each formed on a common substrate of semiconductor material with said level shift circuit, said level shift circuit comprising: a layer of semiconductor material disposed atop said substrate, said semiconductor material being of a first conductivity type and being lightly doped and having an upper surface; a base region of a second conductivity type opposite to that of said first conductivity type and extending into the upper surface of said layer of semiconductor material to a given depth; a source region of said first conductivity type formed in said base region and defining a surface channel region between said source region and said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said lower voltage circuit; a gate insulation layer disposed over said channel region; a conductive gate layer disposed over said gate insulation layer; a drain contact diffusion region of said first conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said base region; a drain electrode connected to said drain contact diffusion region; a further diffusion region of said first conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said drain region and further away from said base region, the portion of said layer of semiconductor material located between said drain contact diffusion region and said further diffusion region defining a conduction region; an insulating layer formed atop said upper surface of said layer of semiconductor material and between said drain region and said further diffusion region; a contact electrode disposed atop said further diffusion region and electrically coupled to said floating voltage circuit; and a conducting resistor layer disposed over said insulating layer between said drain electrode and said contact electrode, thereby defining a resistor that is arranged electrically parallel with said conduction region of said layer of semiconductor material; the resistance of said conduction region being greater than the resistance of said conductive resistor layer.
Claim 2
Dependent Claim
353 words
A level shift device for electrically coupling a floating voltage circuit with a relatively lower voltage circuit each formed on a common substrate of semiconductor material with said level shift circuit, said level shift circuit comprising: a layer of semiconductor material disposed atop said substrate, said semiconductor material being of a first conductivity type and being lightly doped and having an upper surface; a base region of a second conductivity type opposite to that of said first conductivity type and extending into the upper surface of said layer of semiconductor material to a given depth; a source region of said first conductivity type formed in said base region and defining a surface channel region between said source region and said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said lower voltage circuit; a gate insulation layer disposed over said channel region; a conductive gate layer disposed over said gate insulation layer; a drain contact diffusion region of said first conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said base region; a drain electrode connected to said drain contact diffusion region; a further diffusion region of said first conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said drain region and further away from said base region, the portion of said layer of semiconductor material located between said drain contact diffusion region and said further diffusion region defining a conduction region; an insulating layer formed atop said upper surface of said layer of semiconductor material and between said drain region and said further diffusion region; a contact electrode disposed atop said further diffusion region and electrically coupled to said floating voltage circuit; and a conducting resistor layer disposed over said insulating layer between said drain electrode and said contact electrode, thereby defining a resistor that is arranged electrically parallel with said conduction region of said layer of semiconductor material; the resistance of said conduction region being greater than the resistance of said conductive resistor layer.
Claim 3
Dependent Claim
50 words
The device of claim 1 further comprising a diffusion region of said second conductivity type formed in said upper surface of said layer of semiconductor material to a predetermined depth and being located beneath said insulating layer such that the conduction region in said layer of semiconductor material is reduced.
Claim 4
Dependent Claim
38 words
The device of claim 1 further comprising another body region of said second conductivity type formed in said upper surface of said layer of semiconductor material and disposed between said body region and said drain contact diffusion region.
Claim 5
Dependent Claim
22 words
The device of claim 3 further comprising a further metal contact disposed atop at least a portion of said another body region.
Claim 6
Dependent Claim
17 words
The device of claim 4 wherein said further metal contact is electrically connected to said source electrode.
Claim 7
Dependent Claim
46 words
The device of claim 3 further comprising a resurf region of said second conductivity type formed in said upper surface of said layer of semiconductor material and disposed between said another body region and said drain diffusion region and in contact with said another body region.
Claim 8
Dependent Claim
18 words
The device of claim 1 wherein said source contact electrode further contacts a portion of said body region.
Claim 9
Dependent Claim
34 words
The device of claim 1 further comprising a heavily doped spacer region of said second conductivity type formed in said layer of semiconductor material and extending into the substrate for electrically isolating said device.
Claim 10
Dependent Claim
350 words
An integrated circuit comprising: a floating voltage circuit; a relatively lower voltage circuit; and a level shift device formed in a common substrate with said floating voltage circuit and said lower voltage circuit and comprising: a layer of semiconductor material disposed atop said substrate, said semiconductor material being of a first conductivity type and being lightly doped and having an upper surface; a base region of a second conductivity type opposite to that of said first conductivity type and extending into the upper surface of said layer of semiconductor material to a given depth; a source region of said first conductivity type formed in said base region and defining a surface channel region between said source region and said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said lower voltage circuit; a gate insulation layer disposed over said channel region; a conductive gate layer disposed over said gate insulation layer; a drain contact diffusion region of said first conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said base region; a drain electrode connected to said drain contact diffusion region; a further diffusion region of said first conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said drain region and further away from said base region, the portion of said layer of semiconductor material located between said base region and said further diffusion region defining a conduction region; an insulating layer formed atop said upper surface of said layer of semiconductor material and between said drain region and said further diffusion region; a contact electrode disposed atop said further diffusion region and electrically coupled to said floating voltage circuit; and a conducting resistor layer disposed over said insulating layer between said drain electrode and said contact electrode, thereby defining a resistor that is arranged electrically parallel with said conduction region of said layer of semiconductor material; the resistance of said conduction region being greater than the resistance of said conductive resistor layer.
Claim 11
Dependent Claim
350 words
An integrated circuit comprising: a floating voltage circuit; a relatively lower voltage circuit; and a level shift device formed in a common substrate with said floating voltage circuit and said lower voltage circuit and comprising: a layer of semiconductor material disposed atop said substrate, said semiconductor material being of a first conductivity type and being lightly doped and having an upper surface; a base region of a second conductivity type opposite to that of said first conductivity type and extending into the upper surface of said layer of semiconductor material to a given depth; a source region of said first conductivity type formed in said base region and defining a surface channel region between said source region and said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said lower voltage circuit; a gate insulation layer disposed over said channel region; a conductive gate layer disposed over said gate insulation layer; a drain contact diffusion region of said first conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said base region; a drain electrode connected to said drain contact diffusion region; a further diffusion region of said first conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said drain region and further away from said base region, the portion of said layer of semiconductor material located between said base region and said further diffusion region defining a conduction region; an insulating layer formed atop said upper surface of said layer of semiconductor material and between said drain region and said further diffusion region; a contact electrode disposed atop said further diffusion region and electrically coupled to said floating voltage circuit; and a conducting resistor layer disposed over said insulating layer between said drain electrode and said contact electrode, thereby defining a resistor that is arranged electrically parallel with said conduction region of said layer of semiconductor material; the resistance of said conduction region being greater than the resistance of said conductive resistor layer.
Claim 12
Dependent Claim
51 words
The integrated circuit of claim 9 further comprising a diffusion region of said second conductivity type formed in said upper surface of said layer of semiconductor material to a predetermined depth and being located beneath said insulating layer such that the conduction region in said layer of semiconductor material is reduced.
Claim 13
Dependent Claim
38 words
The integrated circuit of claim 9 further comprising another body region of said second conductivity type formed in said upper surface of said layer of semiconductor material and disposed between said body region and said drain diffusion region.
Claim 14
Dependent Claim
23 words
The integrated circuit of claim 11 further comprising a further metal contact disposed atop at least a portion of said another body region.
Claim 15
Dependent Claim
18 words
The integrated circuit of claim 12 wherein said further metal contact is electrically connected to said source electrode.
Claim 16
Dependent Claim
47 words
The integrated circuit of claim 11 further comprising a resurf region of said second conductivity type formed in said upper surface of said layer of semiconductor material and disposed between said another body region and said drain diffusion region and in contact with said another body region.
Claim 17
Dependent Claim
19 words
The integrated circuit of claim 9 wherein said source contact electrode further contacts a portion of said body region.
Claim 18
Dependent Claim
35 words
The integrated circuit of claim 9 further comprising a heavily doped spacer region of said second conductivity type formed in said layer of semiconductor material and extending into the substrate for electrically isolating said device.
Claim 19
Independent Claim
268 words
A device for electrically coupling a floating voltage circuit with a relatively lower voltage circuit each formed in a common substrate with said MOSFET device, said MOSFET device comprising: a layer of semiconductor material of first conductivity type disposed atop said substrate and being lightly doped and having an upper surface; a source diffusion region of said second conductivity type opposite to that of said first conductivity type and formed in said upper surface of said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said floating voltage circuit; a gate insulation layer disposed over a portion of said upper surface of said layer of semiconductor material adjacent to said source diffusion region; a conductive gate layer disposed over said gate insulation layer; a drain region of said second conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said source diffusion region; a drain electrode disposed atop said drain diffusion and electrically coupled to said lower voltage circuit; a sinker region of said second conductivity type extending from said upper surface of said layer of semiconductor material and extending into said substrate and being laterally spaced away from said drain region and being further spaced away from said source diffusion; a ground electrode connected to said sinker region; an insulating layer disposed atop said upper surface of said layer of semiconductor material between said drain electrode and said ground electrode; and a conductive resistor layer disposed atop said insulating layer and being connected between said ground electrode and said drain electrode.
Claim 20
Independent Claim
268 words
A device for electrically coupling a floating voltage circuit with a relatively lower voltage circuit each formed in a common substrate with said MOSFET device, said MOSFET device comprising: a layer of semiconductor material of first conductivity type disposed atop said substrate and being lightly doped and having an upper surface; a source diffusion region of said second conductivity type opposite to that of said first conductivity type and formed in said upper surface of said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said floating voltage circuit; a gate insulation layer disposed over a portion of said upper surface of said layer of semiconductor material adjacent to said source diffusion region; a conductive gate layer disposed over said gate insulation layer; a drain region of said second conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said source diffusion region; a drain electrode disposed atop said drain diffusion and electrically coupled to said lower voltage circuit; a sinker region of said second conductivity type extending from said upper surface of said layer of semiconductor material and extending into said substrate and being laterally spaced away from said drain region and being further spaced away from said source diffusion; a ground electrode connected to said sinker region; an insulating layer disposed atop said upper surface of said layer of semiconductor material between said drain electrode and said ground electrode; and a conductive resistor layer disposed atop said insulating layer and being connected between said ground electrode and said drain electrode.
Claim 21
Dependent Claim
49 words
The device of claim 17 further comprising an isolation diffusion region of said second conductivity type formed in said upper surface of said layer of semiconductor material and contacting said sinker region beneath said insulating layer and being laterally spaced away from said drain region to reduce parasitic resistances.
Claim 22
Dependent Claim
41 words
The device of claim 17 further comprising a lightly doped resurf region formed in said upper surface of said layer of semiconductor material in contact with said drain region and being arranged between said drain region and said source diffusion region.
Claim 23
Dependent Claim
37 words
The device of claim 17 further comprising a further diffusion region of said first conductivity type formed in said upper surface of said layer of semiconductor material and contacting said source diffusion region and said source electrode.
Claim 24
Dependent Claim
17 words
The device of claim 17 wherein at least one gap is formed in said sinker diffusion region.
Claim 25
Dependent Claim
313 words
An integrated circuit comprising: a floating voltage circuit formed in a substrate; a resurf diffusion region substantially surrounding said floating voltage circuit; a relatively lower voltage circuit formed in said substrate; and at least one level shift MOSFET device formed in said substrate and electrically coupled between said floating voltage circuit and said lower voltage circuit, said MOSFET device being formed in a gap in said resurf region; said MOSFET device comprising: a layer of semiconductor material of first conductivity type disposed atop said substrate and being lightly doped and having an upper surface; a source diffusion region of said first conductivity type opposite to that of said first conductivity type and formed in said upper surface of said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said floating voltage circuit; a gate insulation layer disposed over a portion of said upper surface of said layer of semiconductor material adjacent to said source diffusion region; a conductive gate layer disposed over said gate insulation layer; a drain region of said second conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said source diffusion region; a drain electrode disposed atop said drain diffusion and electrically coupled to said lower voltage circuit; a sinker region of said second conductivity type extending from said upper surface of said layer of semiconductor material and extending into said substrate and being laterally spaced away from said drain region and being further spaced away from said source diffusion; a ground electrode connected to said sinker region; an insulating layer disposed atop said upper surface of said layer of semiconductor material and arranged between said drain electrode and said ground electrode; and a conductive resistor layer disposed atop said insulating layer and being connected between said ground electrode and said drain electrode.
Claim 26
Dependent Claim
313 words
An integrated circuit comprising: a floating voltage circuit formed in a substrate; a resurf diffusion region substantially surrounding said floating voltage circuit; a relatively lower voltage circuit formed in said substrate; and at least one level shift MOSFET device formed in said substrate and electrically coupled between said floating voltage circuit and said lower voltage circuit, said MOSFET device being formed in a gap in said resurf region; said MOSFET device comprising: a layer of semiconductor material of first conductivity type disposed atop said substrate and being lightly doped and having an upper surface; a source diffusion region of said first conductivity type opposite to that of said first conductivity type and formed in said upper surface of said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said floating voltage circuit; a gate insulation layer disposed over a portion of said upper surface of said layer of semiconductor material adjacent to said source diffusion region; a conductive gate layer disposed over said gate insulation layer; a drain region of said second conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said source diffusion region; a drain electrode disposed atop said drain diffusion and electrically coupled to said lower voltage circuit; a sinker region of said second conductivity type extending from said upper surface of said layer of semiconductor material and extending into said substrate and being laterally spaced away from said drain region and being further spaced away from said source diffusion; a ground electrode connected to said sinker region; an insulating layer disposed atop said upper surface of said layer of semiconductor material and arranged between said drain electrode and said ground electrode; and a conductive resistor layer disposed atop said insulating layer and being connected between said ground electrode and said drain electrode.
Claim 27
Dependent Claim
50 words
The integrated circuit of claim 22 further comprising an isolation diffusion region of said second conductivity type formed in said upper surface of said layer of semiconductor material and contacting said sinker region beneath said insulating layer and being laterally spaced away from said drain region to reduce parasitic resistances.
Claim 28
Dependent Claim
42 words
The integrated circuit of claim 22 further comprising a lightly doped resurf region formed in said upper surface of said layer of semiconductor material in contact with said drain region and being arranged between said drain region and said source diffusion region.
Claim 29
Dependent Claim
38 words
The integrated circuit of claim 22 further comprising a further diffusion region of said first conductivity type formed in said upper surface of said layer of semiconductor material and contacting said source diffusion region and said source electrode.
Claim 30
Dependent Claim
324 words
An integrated circuit comprising: a floating voltage circuit formed in a substrate; a resurf diffusion region enclosing said high voltage circuit; a relatively lower voltage circuit formed in said substrate; and at least one level shift MOSFET device formed in said substrate and electrically coupled between said high voltage circuit and said low voltage circuit, said resurf region at least partially enclosing said level shift MOSFET device and disposed between said level shift MOSFET device and said floating voltage device; said MOSFET device comprising: a layer of semiconductor material of first conductivity type disposed atop said substrate and being lightly doped and having an upper surface; a source diffusion region of said first conductivity type opposite to that of said first conductivity type formed in said upper surface of said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said floating voltage circuit; a gate insulation layer disposed over a portion of said upper surface of said layer of semiconductor material adjacent to said source diffusion region; a conductive gate layer disposed over said gate insulation layer; a drain region of a second conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said source diffusion region; a drain electrode disposed atop said drain diffusion and electrically coupled to said lower voltage circuit; a sinker region of said second conductivity type extending from said upper surface of said layer of semiconductor material and extending into said substrate and being laterally spaced away from said drain region and being further spaced away from said source diffusion; a ground electrode connected to said sinker region; an insulating layer disposed atop said upper surface of said layer of semiconductor material and arranged between said drain electrode and said ground electrode; and a conductive resistor layer disposed atop said insulating layer and being connected between said ground electrode and said drain electrode.
Claim 31
Dependent Claim
324 words
An integrated circuit comprising: a floating voltage circuit formed in a substrate; a resurf diffusion region enclosing said high voltage circuit; a relatively lower voltage circuit formed in said substrate; and at least one level shift MOSFET device formed in said substrate and electrically coupled between said high voltage circuit and said low voltage circuit, said resurf region at least partially enclosing said level shift MOSFET device and disposed between said level shift MOSFET device and said floating voltage device; said MOSFET device comprising: a layer of semiconductor material of first conductivity type disposed atop said substrate and being lightly doped and having an upper surface; a source diffusion region of said first conductivity type opposite to that of said first conductivity type formed in said upper surface of said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said floating voltage circuit; a gate insulation layer disposed over a portion of said upper surface of said layer of semiconductor material adjacent to said source diffusion region; a conductive gate layer disposed over said gate insulation layer; a drain region of a second conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said source diffusion region; a drain electrode disposed atop said drain diffusion and electrically coupled to said lower voltage circuit; a sinker region of said second conductivity type extending from said upper surface of said layer of semiconductor material and extending into said substrate and being laterally spaced away from said drain region and being further spaced away from said source diffusion; a ground electrode connected to said sinker region; an insulating layer disposed atop said upper surface of said layer of semiconductor material and arranged between said drain electrode and said ground electrode; and a conductive resistor layer disposed atop said insulating layer and being connected between said ground electrode and said drain electrode.
Claim 32
Dependent Claim
40 words
The integrated circuit of claim 26 further comprising a further diffusion region of said second conductivity type formed in said upper surface of said layer of semiconductor material and disposed between and contacting said resurf region and said drain region.
Claim 33
Dependent Claim
42 words
The integrated circuit of claim 26 further comprising a lightly doped resurf region formed in said upper surface of said layer of semiconductor material in contact with said drain region and being arranged between said drain region and said source diffusion region.
Claim 34
Dependent Claim
38 words
The integrated circuit of claim 26 further comprising a further diffusion region of said first conductivity type formed in said upper surface of said layer of semiconductor material and contacting said source diffusion region and said source electrode.
Claim 35
Dependent Claim
29 words
The integrated circuit of claim 26 further comprising a further conductive resistor layer connected between said drain electrode and said ground electrode in parallel with said conductive resistor layer.
Claim 36
Dependent Claim
266 words
A level shift device for electrically coupling a floating voltage circuit with a relatively lower voltage circuit each formed on a common substrate of semiconductor material with said level shift circuit, said level shift circuit comprising: a layer of semiconductor material disposed atop said substrate, said semiconductor material being of a first conductivity type and being lightly doped and having an upper surface; a base region of a second conductivity type opposite to that of said first conductivity type, said base region extending into the upper surface of said layer of semiconductor material to a given depth and having a substantially semicircular configuration; a source region of said first conductivity type formed in said base region and defining a surface channel region between said source region and said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said lower voltage circuit; a gate insulation layer disposed over said channel region; a conductive gate layer disposed over said gate insulation layer; a drain electrode connected to a portion of said layer of semiconductor material thereby defining a drain region, said drain electrode being laterally spaced away from said base region; a contact electrode connected to another portion of said layer of semiconductor material and electrically coupled to said floating voltage circuit, the portion of said layer of semiconductor material located between said drain electrode and said contact electrode defining a conduction region; and a resistor disposed between said drain electrode and said contact electrode, said resistor being arranged electrically parallel with said conduction region of said layer of semiconductor material.
Claim 37
Dependent Claim
266 words
A level shift device for electrically coupling a floating voltage circuit with a relatively lower voltage circuit each formed on a common substrate of semiconductor material with said level shift circuit, said level shift circuit comprising: a layer of semiconductor material disposed atop said substrate, said semiconductor material being of a first conductivity type and being lightly doped and having an upper surface; a base region of a second conductivity type opposite to that of said first conductivity type, said base region extending into the upper surface of said layer of semiconductor material to a given depth and having a substantially semicircular configuration; a source region of said first conductivity type formed in said base region and defining a surface channel region between said source region and said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said lower voltage circuit; a gate insulation layer disposed over said channel region; a conductive gate layer disposed over said gate insulation layer; a drain electrode connected to a portion of said layer of semiconductor material thereby defining a drain region, said drain electrode being laterally spaced away from said base region; a contact electrode connected to another portion of said layer of semiconductor material and electrically coupled to said floating voltage circuit, the portion of said layer of semiconductor material located between said drain electrode and said contact electrode defining a conduction region; and a resistor disposed between said drain electrode and said contact electrode, said resistor being arranged electrically parallel with said conduction region of said layer of semiconductor material.
Claim 38
Dependent Claim
32 words
The device of claim 31 wherein said resistor comprises a diffusion region of said second conductivity type formed in said upper surface of said layer of semiconductor material to a predetermined depth.
Claim 39
Dependent Claim
43 words
The device of claim 31 further comprising another substantially semicircular body region of said second conductivity type formed in said upper surface of said layer of semiconductor material concentric with said body region and disposed between said body region and said drain electrode.
Claim 40
Dependent Claim
22 words
The device of claim 33 further comprising a further metal contact disposed atop at least a portion of said another body region.
Claim 41
Dependent Claim
17 words
The device of claim 34 wherein said further metal contact is electrically connected to said source electrode.
Claim 42
Dependent Claim
46 words
The device of claim 33 further comprising a resurf region of said second conductivity type formed in said upper surface of said layer of semiconductor material and disposed between said another body region and said drain diffusion region and in contact with said another body region.
Claim 43
Dependent Claim
17 words
The device of claim 31 wherein said resistor is a conducting layer disposed atop an insulating layer.
Claim 44
Dependent Claim
34 words
The device of claim 31 further comprising a heavily doped spacer region of said second conductivity type formed in said layer of semiconductor material and extending into the substrate for electrically isolating said device.
Claim 45
Dependent Claim
276 words
An integrated circuit comprising: a floating voltage circuit; a relatively lower voltage circuit; and a level shift device formed in a common substrate with said floating voltage circuit and said lower voltage circuit and comprising: a layer of semiconductor material disposed atop said substrate, said semiconductor material being of a first conductivity type and being lightly doped and having an upper surface; a base region of a second conductivity type opposite to that of said first conductivity type, said base region extending into the upper surface of said layer of semiconductor material to a given depth and having a substantially semicircular configuration; a source region of said first conductivity type formed in said base region and defining a surface channel region between said source region and said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said lower voltage circuit; a gate insulation layer disposed over said channel region; a conductive gate layer disposed over said gate insulation layer; a drain electrode connected to a portion of said layer of semiconductor material thereby defining a drain region; said drain electrode being laterally spaced away from said base region; a drain electrode connected to said drain contact diffusion region; a contact electrode connected to another portion of said layer of semiconductor material and electrically coupled to said floating voltage circuit, the portion of said layer of semiconductor material located between said base region and said further diffusion region defining a conduction region; and a resistor disposed between said drain electrode and said contact electrode, said resistor being arranged electrically parallel with said conduction region of said layer of semiconductor material.
Claim 46
Dependent Claim
276 words
An integrated circuit comprising: a floating voltage circuit; a relatively lower voltage circuit; and a level shift device formed in a common substrate with said floating voltage circuit and said lower voltage circuit and comprising: a layer of semiconductor material disposed atop said substrate, said semiconductor material being of a first conductivity type and being lightly doped and having an upper surface; a base region of a second conductivity type opposite to that of said first conductivity type, said base region extending into the upper surface of said layer of semiconductor material to a given depth and having a substantially semicircular configuration; a source region of said first conductivity type formed in said base region and defining a surface channel region between said source region and said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said lower voltage circuit; a gate insulation layer disposed over said channel region; a conductive gate layer disposed over said gate insulation layer; a drain electrode connected to a portion of said layer of semiconductor material thereby defining a drain region; said drain electrode being laterally spaced away from said base region; a drain electrode connected to said drain contact diffusion region; a contact electrode connected to another portion of said layer of semiconductor material and electrically coupled to said floating voltage circuit, the portion of said layer of semiconductor material located between said base region and said further diffusion region defining a conduction region; and a resistor disposed between said drain electrode and said contact electrode, said resistor being arranged electrically parallel with said conduction region of said layer of semiconductor material.
Claim 47
Dependent Claim
33 words
The integrated circuit of claim 39 wherein said resistor comprises a diffusion region of said second conductivity type formed in said upper surface of said layer of semiconductor material to a predetermined depth.
Claim 48
Dependent Claim
44 words
The integrated circuit of claim 39, further comprising another substantially semicircular body region of said second conductivity type formed in said upper surface of said layer of semiconductor material concentric with said body region and disposed between said body region and said drain electrode.
Claim 49
Dependent Claim
23 words
The integrated circuit of claim 41 further comprising a further metal contact disposed atop at least a portion of said another body region.
Claim 50
Dependent Claim
18 words
The integrated circuit of claim 42 wherein said further metal contact is electrically connected to said source electrode.
Claim 51
Dependent Claim
47 words
The integrated circuit of claim 41 further comprising a resurf region of said second conductivity type formed in said upper surface of said layer of semiconductor material and disposed between said another body region and said drain diffusion region and in contact with said another body region.
Claim 52
Dependent Claim
18 words
The integrated circuit of claim 39 wherein said resistor is a conducting layer disposed atop an insulating layer.
Claim 53
Dependent Claim
35 words
The integrated circuit of claim 39 further comprising a heavily doped spacer region of said second conductivity type formed in said layer of semiconductor material and extending into the substrate for electrically isolating said device.
Claim 54
Independent Claim
187 words
A device for electrically coupling a floating voltage circuit with a relatively lower voltage circuit each formed in a common substrate with said MOSFET device, said MOSFET device comprising: a layer of semiconductor material of first conductivity type disposed atop said substrate and being lightly doped and having an upper surface; a source diffusion region of said second conductivity type opposite to that of said first conductivity type and formed in said upper surface of said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said floating voltage circuit; a gate insulation layer disposed over a portion of said upper surface of said layer of semiconductor material adjacent to said source diffusion region; a conductive gate layer disposed over said gate insulation layer; a drain region of said second conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said source diffusion region; a drain electrode disposed atop said drain diffusion and electrically coupled to said lower voltage circuit; and a resistor connected between said ground electrode and said drain electrode.
Claim 55
Independent Claim
187 words
A device for electrically coupling a floating voltage circuit with a relatively lower voltage circuit each formed in a common substrate with said MOSFET device, said MOSFET device comprising: a layer of semiconductor material of first conductivity type disposed atop said substrate and being lightly doped and having an upper surface; a source diffusion region of said second conductivity type opposite to that of said first conductivity type and formed in said upper surface of said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said floating voltage circuit; a gate insulation layer disposed over a portion of said upper surface of said layer of semiconductor material adjacent to said source diffusion region; a conductive gate layer disposed over said gate insulation layer; a drain region of said second conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said source diffusion region; a drain electrode disposed atop said drain diffusion and electrically coupled to said lower voltage circuit; and a resistor connected between said ground electrode and said drain electrode.
Claim 56
Dependent Claim
58 words
The device of claim 47 further comprising a sinker region of said second conductivity type extending from said upper surface of said layer of semiconductor material and extending into said substrate and being laterally spaced away from said drain region and being further spaced away from said source diffusion; and a ground electrode connected to said sinker region.
Claim 57
Dependent Claim
45 words
The device of claim 48 further comprising an isolation diffusion region of said second conductivity type formed in said upper surface of said layer of semiconductor material and contacting said sinker region and being laterally spaced away from said drain region to reduce parasitic resistances.
Claim 58
Dependent Claim
41 words
The device of claim 47 further comprising a lightly doped resurf region formed in said upper surface of said layer of semiconductor material in contact with said drain region and being arranged between said drain region and said source diffusion region.
Claim 59
Dependent Claim
37 words
The device of claim 47 further comprising a further diffusion region of said first conductivity type formed in said upper surface of said layer of semiconductor material and contacting said source diffusion region and said source electrode.
Claim 60
Dependent Claim
230 words
An integrated circuit comprising: a floating voltage circuit formed in a substrate; a resurf diffusion region substantially surrounding said floating voltage circuit; a relatively lower voltage circuit formed in said substrate; and at least one level shift MOSFET device formed in said substrate and electrically coupled between said floating voltage circuit and said lower voltage circuit, said MOSFET device being formed in a gap in said resurf region; said MOSFET device comprising: a layer of semiconductor material of first conductivity type disposed atop said substrate and being lightly doped and having an upper surface; a source diffusion region of said first conductivity type opposite to that of said first conductivity type and formed in said upper surface of said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said floating voltage circuit; a gate insulation layer disposed over a portion of said upper surface of said layer of semiconductor material adjacent to said source diffusion region; a conductive gate layer disposed over said gate insulation layer; a drain region of said second conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said source diffusion region; a drain electrode disposed atop said drain diffusion and electrically coupled to said lower voltage circuit; and a resistor connected between said ground electrode and said drain electrode.
Claim 61
Dependent Claim
230 words
An integrated circuit comprising: a floating voltage circuit formed in a substrate; a resurf diffusion region substantially surrounding said floating voltage circuit; a relatively lower voltage circuit formed in said substrate; and at least one level shift MOSFET device formed in said substrate and electrically coupled between said floating voltage circuit and said lower voltage circuit, said MOSFET device being formed in a gap in said resurf region; said MOSFET device comprising: a layer of semiconductor material of first conductivity type disposed atop said substrate and being lightly doped and having an upper surface; a source diffusion region of said first conductivity type opposite to that of said first conductivity type and formed in said upper surface of said layer of semiconductor material; a source electrode connected to said source region and electrically coupled to said floating voltage circuit; a gate insulation layer disposed over a portion of said upper surface of said layer of semiconductor material adjacent to said source diffusion region; a conductive gate layer disposed over said gate insulation layer; a drain region of said second conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said source diffusion region; a drain electrode disposed atop said drain diffusion and electrically coupled to said lower voltage circuit; and a resistor connected between said ground electrode and said drain electrode.
Claim 62
Dependent Claim
59 words
The integrated circuit of claim 52 further comprising a sinker region of said second conductivity type extending from said upper surface of said layer of semiconductor material and extending into said substrate and being laterally spaced away from said drain region and being further spaced away from said source diffusion; and a ground electrode connected to said sinker region.
Claim 63
Dependent Claim
50 words
The integrated circuit of claim 53 further comprising an isolation diffusion region of said second conductivity type formed in said upper surface of said layer of semiconductor material and contacting said sinker region beneath said insulating layer and being laterally spaced away from said drain region to reduce parasitic resistances.
Claim 64
Dependent Claim
42 words
The integrated circuit of claim 52 further comprising a lightly doped resurf region formed in said upper surface of said layer of semiconductor material in contact with said drain region and being arranged between said drain region and said source diffusion region.
Claim 65
Dependent Claim
38 words
The integrated circuit of claim 52 further comprising a further diffusion region of said first conductivity type formed in said upper surface of said layer of semiconductor material and contacting said source diffusion region and said source electrode.
Claim 66
Independent Claim
197 words
A device for electrically coupling a floating voltage circuit with a relatively lower voltage circuit each formed in a common substrate with said MOSFET device, said MOSFET device comprising: a layer of semiconductor material of first conductivity type disposed atop said substrate and being lightly doped and having an upper surface; a source diffusion region of said second conductivity type opposite to that of said first conductivity type, said source diffusion region being formed in said upper surface of said layer of semiconductor material and having a substantially semicircular configuration; a source electrode connected to said source region and electrically coupled to said floating voltage circuit; a gate insulation layer disposed over a portion of said upper surface of said layer of semiconductor material adjacent to said source diffusion region; a conductive gate layer disposed over said gate insulation layer; a drain region of said second conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said source diffusion region; a drain electrode disposed atop said drain diffusion and electrically coupled to said lower voltage circuit; and a resistor connected between said ground electrode and said drain electrode.
Claim 67
Independent Claim
197 words
A device for electrically coupling a floating voltage circuit with a relatively lower voltage circuit each formed in a common substrate with said MOSFET device, said MOSFET device comprising: a layer of semiconductor material of first conductivity type disposed atop said substrate and being lightly doped and having an upper surface; a source diffusion region of said second conductivity type opposite to that of said first conductivity type, said source diffusion region being formed in said upper surface of said layer of semiconductor material and having a substantially semicircular configuration; a source electrode connected to said source region and electrically coupled to said floating voltage circuit; a gate insulation layer disposed over a portion of said upper surface of said layer of semiconductor material adjacent to said source diffusion region; a conductive gate layer disposed over said gate insulation layer; a drain region of said second conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said source diffusion region; a drain electrode disposed atop said drain diffusion and electrically coupled to said lower voltage circuit; and a resistor connected between said ground electrode and said drain electrode.
Claim 68
Dependent Claim
58 words
The device of claim 57 further comprising a sinker region of said second conductivity type extending from said upper surface of said layer of semiconductor material and extending into said substrate and being laterally spaced away from said drain region and being further spaced away from said source diffusion; and a ground electrode connected to said sinker region.
Claim 69
Dependent Claim
36 words
The device of claim 58 further comprising an isolation diffusion region of said second conductivity type formed in said upper surface of said layer of semiconductor material and contacting said sinker region and said drain region.
Claim 70
Dependent Claim
41 words
The device of claim 57 further comprising a lightly doped resurf region formed in said upper surface of said layer of semiconductor material in contact with said drain region and being arranged between said drain region and said source diffusion region.
Claim 71
Dependent Claim
37 words
The device of claim 57 further comprising a further diffusion region of said first conductivity type formed in said upper surface of said layer of semiconductor material and contacting said source diffusion region and said source electrode.
Claim 72
Dependent Claim
252 words
An integrated circuit comprising: a floating voltage circuit formed in a substrate; a resurf diffusion region enclosing said high voltage circuit; a relatively lower voltage circuit formed in said substrate; and at least one level shift MOSFET device formed in said substrate and electrically coupled between said high voltage circuit and said low voltage circuit, said resurf region at least partially enclosing said level shift MOSFET device and disposed between said level shift MOSFET device and said floating voltage device; said MOSFET device comprising: a layer of semiconductor material of first conductivity type disposed atop said substrate and being lightly doped and having an upper surface; a source diffusion region of said first conductivity type opposite to that of said first conductivity type, said source diffusion region being formed in said upper surface of said layer of semiconductor material and having a substantially semicircular configuration; a source electrode connected to said source region and electrically coupled to said floating voltage circuit; a gate insulation layer disposed over a portion of said upper surface of said layer of semiconductor material adjacent to said source diffusion region; a conductive gate layer disposed over said gate insulation layer; a drain region of a second conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said source diffusion region; a drain electrode disposed atop said drain diffusion and electrically coupled to said lower voltage circuit; and a resistor connected between said ground electrode and said drain electrode.
Claim 73
Dependent Claim
252 words
An integrated circuit comprising: a floating voltage circuit formed in a substrate; a resurf diffusion region enclosing said high voltage circuit; a relatively lower voltage circuit formed in said substrate; and at least one level shift MOSFET device formed in said substrate and electrically coupled between said high voltage circuit and said low voltage circuit, said resurf region at least partially enclosing said level shift MOSFET device and disposed between said level shift MOSFET device and said floating voltage device; said MOSFET device comprising: a layer of semiconductor material of first conductivity type disposed atop said substrate and being lightly doped and having an upper surface; a source diffusion region of said first conductivity type opposite to that of said first conductivity type, said source diffusion region being formed in said upper surface of said layer of semiconductor material and having a substantially semicircular configuration; a source electrode connected to said source region and electrically coupled to said floating voltage circuit; a gate insulation layer disposed over a portion of said upper surface of said layer of semiconductor material adjacent to said source diffusion region; a conductive gate layer disposed over said gate insulation layer; a drain region of a second conductivity type formed in said upper surface of said layer of semiconductor material and being laterally spaced away from said source diffusion region; a drain electrode disposed atop said drain diffusion and electrically coupled to said lower voltage circuit; and a resistor connected between said ground electrode and said drain electrode.
Claim 74
Dependent Claim
59 words
The integrated circuit of claim 62 further comprising a sinker region of said second conductivity type extending from said upper surface of said layer of semiconductor material and extending into said substrate and being laterally spaced away from said drain region and being further spaced away from said source diffusion; and a ground electrode connected to said sinker region.
Claim 75
Dependent Claim
40 words
The integrated circuit of claim 63 further comprising a further diffusion region of said second conductivity type formed in said upper surface of said layer of semiconductor material and disposed between and contacting said resurf region and said drain region.
Claim 76
Dependent Claim
42 words
The integrated circuit of claim 62 further comprising a lightly doped resurf region formed in said upper surface of said layer of semiconductor material in contact with said drain region and being arranged between said drain region and said source diffusion region.
Claim 77
Dependent Claim
38 words
The integrated circuit of claim 62 further comprising a further diffusion region of said first conductivity type formed in said upper surface of said layer of semiconductor material and contacting said source diffusion region and said source electrode.
Claim 78
Dependent Claim
32 words
The integrated circuit of claim 64 wherein said further diffusion region comprises a further conductive resistor connected between said drain electrode and said ground electrode in parallel with said conductive resistor layer.
References Cited (Backward Citations)
US5237193A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-31 | 2002-03-02 | 2002-09-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-31 | 2006-03-02 | 2006-09-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-31 | 2010-03-02 | 2010-09-01 | $7700.00 | Window Closed / Lapsed |