Synchronous semiconductor memory device

Claim 2

A semiconductor memory device comprising: a data output terminal, an output circuit coupled to said output terminal and responding to first and second data signals to drive said output terminal at a first logic level when said first and second data signals take a first state and at a second logic level when said first and second data signals take a second state and to bring said output terminal into a high impedance state when said first and second data signals take a third state, a first latch circuit provided to latch and supply said first data signal to said output circuit in response to a latch-enable signal, a second latch circuit provided to latch and supply said second data signal to said output circuit in response to said latch-enable signal, and a third latch circuit producing a control signal in response to an inverted signal of said latch-enable signal so that said first and second data signals take said third state in response to said control signal.

Claim 3

The device as claimed in claim 1, further comprising: a data amplifier amplifying data stored in a selected memory cell to output a third data signal and a fourth data signal complementary to said third data signal; and an output control circuit comprising a first logic gate responding said third data signal and said control signal to output said first data signal and a second logic gate responding said fourth data signal and said control signal to output said second data signal.

Claim 4

The device as claimed in claim 1, further comprising: an output control circuit, connected to said first latch circuit and to said second latch circuit, outputting said first and second data signals in response to a third data signal and a fourth data signal, respectively, said output control circuit further receiving said control signal and controlling said first and second data signals to take said third state irrespective of a level of said third and fourth data signals when said control signal is at a predetermined level.

Claim 5

The device as claimed in claim 3, further comprising: a command decoder receiving and decoding a plurality of command signals to produce a decoded command signal; and a fourth latch circuit latching and supplying said decoded command signal to said third latch circuit as said control signal in response to a clock signal.

Claim 6

The device as claimed in claim 3, further comprising: a data amplifier amplifying said data stored in said selected memory cell to output said third data signal and said fourth data signal complementary to said third data signal; wherein said output control circuit comprises a first logic gate responding said third data signal and said control signal to output said first data signal and a second logic gate responding said fourth data signal and said control signal to output said second data signal.

Claim 7

The device as claimed in claim 5, wherein each of said first through third latch circuits is a D-Flip/Flop and each of said first and second logic gates is an AND gate.

Claim 8

A semiconductor memory device comprising: an output terminal; an output control circuit outputting a first data signal and a second data signal; a first latch circuit latching said first data signal and outputting said first data signal when a latch enable signal changes logic levels from a first logic level to a second logic level; a second latch circuit latching said second data signal and outputting said second data signal when said latch enable signal changes logic levels from a first logic level to a second logic level; a first transistor coupled to a first power source line and to said output terminal, and having a first control gate receiving said first data signal; a second transistor coupled to a second power source line and to said output terminal, and having a second control gate receiving said second data signal; and a third latch circuit latching and supplying a control signal to said output control circuit when said latch enable signal changes from said second logic level to said first logic level; said output control circuit supplying said first and second data signals to said first and second latch circuits when said control signal in a first state, and said output control circuit preventing supply of said first and second data signals when said control signal is in a second state.

Claim 9

A semiconductor memory device comprising: an output terminal; an output control circuit outputting a first data signal and a second data signal; a first latch circuit latching said first data signal and outputting said first data signal when a latch enable signal changes logic levels from a first logic level to a second logic level; a second latch circuit latching said second data signal and outputting said second data signal when said latch enable signal changes logic levels from a first logic level to a second logic level; a first transistor coupled to a first power source line and to said output terminal, and having a first control gate receiving said first data signal; a second transistor coupled to a second power source line and to said output terminal, and having a second control gate receiving said second data signal; and a third latch circuit latching and supplying a control signal to said output control circuit when said latch enable signal changes from said second logic level to said first logic level; said output control circuit supplying said first and second data signals to said first and second latch circuits when said control signal in a first state, and said output control circuit preventing supply of said first and second data signals when said control signal is in a second state.

Claim 10

The device as claimed in claim 7, further comprising: a command decoder receiving and decoding a command signal to produce a decoded command signal; and a fourth latch circuit latching and supplying said decoded command signal to said third latch circuit as said control signal in response to a clock signal.

Claim 11

The device as claimed in claim 7, wherein said output control circuit comprises a first logic gate receiving said first data signal and said control signal and having an output node for supplying said first data signal to said first latch circuit; and a second logic gate receiving said second data signal and said control signal and having an output node for supplying said second data signal to said second latch circuit.

Claim 12

The device as claimed in claim 9, wherein each of said first through third latch circuits is a D-Flip/Flop and each of said first and second logic gates is an AND gate.

Claim 13

The device as claimed in claim 9, wherein said second data signal is complementary to said first data signal.

Claim 14

The device as claimed in claim 11, further comprising: a data amplifier, connected to said output control circuit, amplifying data stored in a selected memory cell to output said first data signal and said second data signal complementary to said first data signal.

Claim 15

A semiconductor memory device comprising: a burst controller receiving an address signal to produce an internal address signal in response to a clock signal; a memory cell array including a plurality of memory cells; a first latch circuit latching a control signal in response to said clock signal; a first signal generator producing a first synchronizing signal based on said clock signal; a second signal generator producing a second synchronizing signal based on said clock signal; a second latch circuit latching data output from a memory cell of said memory cell array selected by said internal address signal in response to said first synchronizing signal; a data amplifier amplifying said data latched by said second latch circuit to produce a first data signal and a second data signal; a first flip-flop circuit latching said control signal in response to an inverse second synchronizing signal to output a latched control signal; an output control circuit receiving said first and second data signals, said output control circuit outputting a third data signal corresponding to said first data signal and a fourth data signal corresponding to said second data signal when said latched control signal is at a first logic level, said output control signal outputting said third and fourth data signals irrespective of logic levels of said first and second data signals when said latched control signal is at a second logic level; a second flip flop circuit latching and outputting said third data signal in response to said second synchronizing signal; a third flip flop circuit latching and outputting said fourth data signal in response to said second synchronizing signal; and an output circuit receiving said third and fourth data signals and having an output terminal.

Claim 16

A semiconductor memory device comprising: a burst controller receiving an address signal to produce an internal address signal in response to a clock signal; a memory cell array including a plurality of memory cells; a first latch circuit latching a control signal in response to said clock signal; a first signal generator producing a first synchronizing signal based on said clock signal; a second signal generator producing a second synchronizing signal based on said clock signal; a second latch circuit latching data output from a memory cell of said memory cell array selected by said internal address signal in response to said first synchronizing signal; a data amplifier amplifying said data latched by said second latch circuit to produce a first data signal and a second data signal; a first flip-flop circuit latching said control signal in response to an inverse second synchronizing signal to output a latched control signal; an output control circuit receiving said first and second data signals, said output control circuit outputting a third data signal corresponding to said first data signal and a fourth data signal corresponding to said second data signal when said latched control signal is at a first logic level, said output control signal outputting said third and fourth data signals irrespective of logic levels of said first and second data signals when said latched control signal is at a second logic level; a second flip flop circuit latching and outputting said third data signal in response to said second synchronizing signal; a third flip flop circuit latching and outputting said fourth data signal in response to said second synchronizing signal; and an output circuit receiving said third and fourth data signals and having an output terminal.

Claim 17

The device as claimed in claim 13, further comprising: a command decoder receiving and decoding a plurality of command signals to supply a decoded command signal to said first latch circuit as said control signal.

Claim 18

The device as claimed in claim 13, wherein said output control circuit comprises a first logic gate receiving said first data signal and said latched control signal and having an output node connected to said first flip flop circuit; and a second logic gate receiving said second data signal and said control signal and having an output node connected to said second flip flop circuit.

Claim 19

The device as claimed in claim 15, wherein said fourth data signal is complementary to said third data signal.

Claim 20

The device as claimed in claim 13, wherein said output circuit comprises a first transistor coupled to a first power source line and to said output terminal and having a control gate connected to said second flip flop for receiving said third data signal; and a second transistor coupled to a second power source line and to said output terminal and having a control gate connected to said third flip flop for receiving said fourth data signal.

Claim 21

The device as claimed in claim 17, wherein each of said first and second transistors is a N-channel MOS transistor and each of said first and second logic gates is an AND gate.