US5825686A
Expired / Lapsed
US
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Multi-value read-only memory cell having an improved signal-to-noise ratio
Assignee: Polaris Innovations Ltd
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Filing: 1996-02-05
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Granted: 1998-10-20
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Expires: 2016-02-05
Abstract
Abstract PCT No. PCT/DE96/00168 Sec. 371 Date Aug. 11, 1997 Sec. 102(e) Date Aug. 11, 1997 PCT Filed Feb. 5, 1996 PCT Pub. No. WO96/25741 PCT Pub. Date Aug. 22, 1996The invention concerns a multi-valued read-only storage location which is constructed symmetrically for storing a first or second state (M, M''') and asymmetrically for storing at least a third state (M', M''). The advantage thereof is above all that the storage capacity is doubled without notably increasing expenditure and without impairing the signal-to-noise ratio with respect to conventional storage locations. The invention is suitable for electrically programmable and mask-programmable read-only memories, in particular for those used in low voltage technology.
Inventors
- 👤 Doris Schmitt-Landsiedel
- 👤 Roland Thewes
- 👤 Michael Bollu
- 👤 Paul-Werner von Basse
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 05:09
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/69; H10D30/691; G; G11; G11C; G11C11/00; G11C11/56; G11C11/5671; G11C11/5692; G11C16/00; G11C16/02; G11C16/04; G11C16/0466; G11C16/0475
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
262 words
Multi-value read-only memory cell, having symmetrical construction for storing one of a first state and a second state and having asymmetrical construction for storing at least a third state, comprising: a MOS field-effect transistor having a source/drain region situated in a semiconductor body and having a drain/source region situated in the semiconductor body; in order to store the first state, a first cell connection connected directly to the source/drain region of the MOS field-effect transistor and a second cell connection connected directly to the drain/source region of the MOS field-effect transistor; in order to store the second state, the first cell connection connected via a first component to the source/drain region of the MOS field-effect transistor, and the second cell connection connected via a second component to the drain/source region of the MOS field-effect transistor; in order to store the third state, the first cell connection connected via the first component to the source/drain region of the MOS field-effect transistor, and the second cell connection connected directly to the drain/source region of the MOS field-effect transistor; in order to store a fourth state, the first cell connection connected directly to the source/drain region of the MOS field-effect transistor, and the second cell connection connected via the second component to the drain/source region of the MOS field-effect transistor; a third cell connection connected to a gate electrode of the MOS field-effect transistor, the gate electrode being electrically insulated from the semiconductor body by an insulation layer (ISO); and the first component being a first diode and the second component being a second diode.
Claim 2
Dependent Claim
262 words
Multi-value read-only memory cell, having symmetrical construction for storing one of a first state and a second state and having asymmetrical construction for storing at least a third state, comprising: a MOS field-effect transistor having a source/drain region situated in a semiconductor body and having a drain/source region situated in the semiconductor body; in order to store the first state, a first cell connection connected directly to the source/drain region of the MOS field-effect transistor and a second cell connection connected directly to the drain/source region of the MOS field-effect transistor; in order to store the second state, the first cell connection connected via a first component to the source/drain region of the MOS field-effect transistor, and the second cell connection connected via a second component to the drain/source region of the MOS field-effect transistor; in order to store the third state, the first cell connection connected via the first component to the source/drain region of the MOS field-effect transistor, and the second cell connection connected directly to the drain/source region of the MOS field-effect transistor; in order to store a fourth state, the first cell connection connected directly to the source/drain region of the MOS field-effect transistor, and the second cell connection connected via the second component to the drain/source region of the MOS field-effect transistor; a third cell connection connected to a gate electrode of the MOS field-effect transistor, the gate electrode being electrically insulated from the semiconductor body by an insulation layer (ISO); and the first component being a first diode and the second component being a second diode.
Claim 3
Dependent Claim
244 words
The multi-value read-only memory cell according to claim 1, wherein, in order to form the first diode, the first cell connection is connected via a first supplementary region to the source/drain region of the MOS field-effect transistor and, in order to form the second diode, the second cell connection is connected via a second supplementary region to the drain/source region of the MOS field-effect transistor; wherein, in order to store the first state, first and the second supplementary regions are bridged by metallic contact links of the first and second connections, which contact links have a deep structure and extend at least as far as the source/drain region and drain/source region; wherein, in order to store the second state, both the first and the second supplementary regions are contacted only by metallic contact links of the first and second connections, which contact links have a planar configuration and extend only at least as far as the first and second supplementary regions; wherein, in order to store the third state, only the first supplementary region is bridged by a metallic contact link of the first connection, which contact link has a deep structure and extends at least as far as the source/drain region; and wherein, in order to store the fourth state, only the second supplementary region is bridged by a metallic contact link of the first connection, which contact link has a deep structure and extends at least as far as the drain/source region.
Claim 4
Dependent Claim
260 words
A multi-value read-only memory cell, having symmetrical construction for storing a first state and a second state and having asymmetrical construction for storing at least a third state, comprising: a MOS field-effect transistor having a source/drain region situated in a semiconductor body and having a drain/source region situated in the semiconductor body; in order to store the first state a first cell connection connected directly to the source/drain region of the MOS field-effect transistor, and a second cell connection connected directly to the drain/source region of the MOS field-effect transistor; in order to store the second state, the first cell connection connected via a first component to the source/drain region of the MOS field-effect transistor and the second cell connection connected via a second component to the drain/source region of the MOS field-effect transistor; in order to store the third state, the first cell connection connected via the first component to the source/drain region of the MOS field-effect transistor, and the second cell connection connected directly to the drain/source region of the MOS field-effect transistor; in order to store a fourth state, the first cell connection connected directly to the source/drain region of the MOS field-effect transistor, and the second cell connection connected via the second component to the drain/source region of the MOS field-effect transistor; a third cell connection connected to a gate electrode of the MOS field-effect transistor, the gate electrode being electrically insulated from the semiconductor body by an insulation layer; and the first component being a first resistor and the second component being a second resistor.
Claim 5
Dependent Claim
260 words
A multi-value read-only memory cell, having symmetrical construction for storing a first state and a second state and having asymmetrical construction for storing at least a third state, comprising: a MOS field-effect transistor having a source/drain region situated in a semiconductor body and having a drain/source region situated in the semiconductor body; in order to store the first state a first cell connection connected directly to the source/drain region of the MOS field-effect transistor, and a second cell connection connected directly to the drain/source region of the MOS field-effect transistor; in order to store the second state, the first cell connection connected via a first component to the source/drain region of the MOS field-effect transistor and the second cell connection connected via a second component to the drain/source region of the MOS field-effect transistor; in order to store the third state, the first cell connection connected via the first component to the source/drain region of the MOS field-effect transistor, and the second cell connection connected directly to the drain/source region of the MOS field-effect transistor; in order to store a fourth state, the first cell connection connected directly to the source/drain region of the MOS field-effect transistor, and the second cell connection connected via the second component to the drain/source region of the MOS field-effect transistor; a third cell connection connected to a gate electrode of the MOS field-effect transistor, the gate electrode being electrically insulated from the semiconductor body by an insulation layer; and the first component being a first resistor and the second component being a second resistor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-10-19 | 2002-04-20 | 2002-10-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-10-19 | 2006-04-20 | 2006-10-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-10-19 | 2010-04-20 | 2010-10-20 | $7700.00 | Window Closed / Lapsed |