US5828080A
Expired / Lapsed
US
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Oxide thin film, electronic device substrate and electronic device
Assignee: TDK Corp
•
Filing: 1995-08-17
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Granted: 1998-10-27
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Expires: 2015-08-17
Abstract
Abstract The invention provides an oxide thin film in the form of an epitaxial film of the composition: Zr1-xRxO2- delta wherein R is a rare earth metal inclusive of Y, x=0 to 0.75, preferably x=0.20 to 0.50, formed on a surface of a single crystal silicon substrate. A rocking curve of the film has a half-value width of up to 1.50 DEG . The film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm. An epitaxial film of the composition ZrO2 is constructed by unidirectionally oriented crystals. When a functional film is to be formed on the oxide thin film serving as a buffer film, an adequately epitaxially grown functional film of quality is available. Particularly when the single crystal substrate is rotated within its plane, an oxide thin film of uniform high quality having an area as large as 10 cm2 or more is obtained.
Inventors
- 👤 Yoshihiko Yano
- 👤 Takao Noguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:06
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6332; H10P14/6939; H10P14/69396
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
108 words
An oxide thin film in the form of a unidirectionally oriented epitaxial film consisting essentially of zirconium oxide formed on a single crystal substrate of silicon wherein said unidirectionally oriented epitaxial film contains at least 95% of Zr based on the amount of only constituent elements of the film excluding oxygen, a rocking curve of reflection on a (002) or (111) plane of said unidirectionally oriented epitaxial film has a half-value width of up to 1.5°, and said unidirectionally oriented epitaxial film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 2
Dependent Claim
108 words
An oxide thin film in the form of a unidirectionally oriented epitaxial film consisting essentially of zirconium oxide formed on a single crystal substrate of silicon wherein said unidirectionally oriented epitaxial film contains at least 95% of Zr based on the amount of only constituent elements of the film excluding oxygen, a rocking curve of reflection on a (002) or (111) plane of said unidirectionally oriented epitaxial film has a half-value width of up to 1.5°, and said unidirectionally oriented epitaxial film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 3
Dependent Claim
32 words
The oxide thin film of claim 1 wherein said unidirectionally oriented epitaxial film contains at least 98% of Zr based on the amount of only constituent elements of the film excluding oxygen.
Claim 4
Dependent Claim
39 words
The oxide thin film of claim 1 wherein said unidirectionally oriented epitaxial film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 5
Dependent Claim
33 words
The oxide thin film of claim 1 wherein said single crystal silicon substrate is a surface treated silicon substrate whose surface has a 1×1 surface structure formed of metallic zirconium, silicon and oxygen.
Claim 6
Dependent Claim
27 words
The oxide thin film of claim 1 wherein said single crystal substrate is a silicon single crystal whose (100) or (111) plane is made the substrate surface.
Claim 7
Dependent Claim
17 words
The oxide thin film of claim 1 which has an area of at least 10 square centimeter.
Claim 8
Dependent Claim
22 words
The oxide thin film of any one of claims 1 to 6 which has an area of at least 10 square centimeter.
Claim 9
Dependent Claim
109 words
An oxide thin film in the form of a unidirectionally oriented epitaxial film of the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal inclusive of yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5, formed on a single crystal silicon substrate wherein a rocking curve of reflection on a (002) or (111) plane of said film has a half-value width of up to 1.5°, and said film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 10
Dependent Claim
109 words
An oxide thin film in the form of a unidirectionally oriented epitaxial film of the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal inclusive of yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5, formed on a single crystal silicon substrate wherein a rocking curve of reflection on a (002) or (111) plane of said film has a half-value width of up to 1.5°, and said film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 11
Dependent Claim
33 words
The oxide thin film of claim 8 wherein said single crystal silicon substrate is a surface treated silicon substrate whose surface has a 1×1 surface structure formed of metallic zirconium, silicon and oxygen.
Claim 12
Dependent Claim
28 words
The oxide thin film of claim 8 wherein said single crystal silicon substrate is a silicon single crystal whose (100) or (111) plane is made the substrate surface.
Claim 13
Dependent Claim
121 words
A substrate for use in electronic devices comprising a single crystal silicon substrate and an oxide thin film in the form of a unidirectionally oriented epitaxial film consisting essentially of ZrO 2 formed on the single crystal silicon substrate, wherein said unidirectionally oriented epitaxial film contains at least 95% of Zr based on the amount of only constituent elements of the film excluding oxygen, a rocking curve of reflection on a (002) or (111) plane of said unidirectionally oriented epitaxial film has a half-value width of up to 1.5°, and said unidirectionally oriented epitaxial film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 14
Dependent Claim
121 words
A substrate for use in electronic devices comprising a single crystal silicon substrate and an oxide thin film in the form of a unidirectionally oriented epitaxial film consisting essentially of ZrO 2 formed on the single crystal silicon substrate, wherein said unidirectionally oriented epitaxial film contains at least 95% of Zr based on the amount of only constituent elements of the film excluding oxygen, a rocking curve of reflection on a (002) or (111) plane of said unidirectionally oriented epitaxial film has a half-value width of up to 1.5°, and said unidirectionally oriented epitaxial film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 15
Dependent Claim
121 words
A substrate for use in electronic devices comprising a single crystal silicon substrate and an oxide thin film in the form of an epitaxial film of the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal inclusive of yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5, formed on the single crystal silicon substrate wherein a rocking curve of reflection on a (002) or (111) plane of said film has a half-value width of up to 1.5°, and said film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 16
Dependent Claim
121 words
A substrate for use in electronic devices comprising a single crystal silicon substrate and an oxide thin film in the form of an epitaxial film of the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal inclusive of yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5, formed on the single crystal silicon substrate wherein a rocking curve of reflection on a (002) or (111) plane of said film has a half-value width of up to 1.5°, and said film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 17
Dependent Claim
20 words
The substrate for use in electronic devices of claim 13 wherein said epitaxial film is a unidirectionally oriented epitaxial film.
Claim 18
Dependent Claim
44 words
A silicon substrate of single crystal silicon whose surface has a 1×1 surface structure formed of silicon, oxygen and at least one metal selected from the group consisting of an alkaline earth metal, rare earth metal (inclusive of scandium and yttrium), zirconium, and hafnium.
Claim 19
Dependent Claim
44 words
A silicon substrate of single crystal silicon whose surface has a 1×1 surface structure formed of silicon, oxygen and at least one metal selected from the group consisting of an alkaline earth metal, rare earth metal (inclusive of scandium and yttrium), zirconium, and hafnium.
Claim 20
Dependent Claim
119 words
The silicon substrate of single crystal silicon as claimed in claim 14, further comprising an oxide thin film formed thereon, wherein the oxide thin film is in the form of a unidirectionally oriented epitaxial film consisting essentially of zirconium oxide and contains at least 95% of Zr based on the amount of only constituent elements of the film excluding oxygen, has a rocking curve of reflection on a (002) or (111) plane of said unidirectionally oriented epitaxial film with a half value width of up to 1.5°, and said unidirectionally oriented epitaxial film has a ten point mean roughness Rz of up to 2 nm across a reference link of 500 nm over at least 80% of its surface.
Claim 21
Dependent Claim
131 words
The silicon substrate of single crystal silicon as claimed in claim 14, further comprising an oxide thin film formed thereon, wherein the oxide thin film is in the form of a unidirectionally oriented epitaxial film of the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal inclusive of yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5, formed on a single crystal silicon substrate wherein a rocking curve of reflection on a (002) or (111) plane of said film has a half-value width of up to 1.5°, and said film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 22
Dependent Claim
117 words
A semiconductor device comprising a single crystal silicon substrate and an insulating layer formed on said substrate, characterized in that said insulating layer is a unidirectionally oriented epitaxial film consisting essentially of ZrO 2 , wherein said unidirectionally oriented epitaxial film contains at least 95% of Zr based on the amount of only constituent elements of the film excluding oxygen, a rocking curve of reflection on a (002) or (111) plane of said unidirectionally oriented epitaxial film has a half-value width of up to 1.5°, and said unidirectionally oriented epitaxial film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 23
Dependent Claim
117 words
A semiconductor device comprising a single crystal silicon substrate and an insulating layer formed on said substrate, characterized in that said insulating layer is a unidirectionally oriented epitaxial film consisting essentially of ZrO 2 , wherein said unidirectionally oriented epitaxial film contains at least 95% of Zr based on the amount of only constituent elements of the film excluding oxygen, a rocking curve of reflection on a (002) or (111) plane of said unidirectionally oriented epitaxial film has a half-value width of up to 1.5°, and said unidirectionally oriented epitaxial film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 24
Dependent Claim
31 words
The semiconductor device of claim 17 wherein said single crystal silicon substrate is a surface treated silicon substrate whose surface has a 1×1 surface structure formed of metallic zirconium and oxygen.
Claim 25
Dependent Claim
30 words
The semiconductor device of claim 17 wherein a silicon single crystal is used as said single crystal substrate such that its (100) or (111) plane is made the substrate surface.
Claim 26
Dependent Claim
22 words
The semiconductor device of claim 17 which is a MIS capacitor wherein said unidirectionally oriented epitaxial film serves as a dielectric layer.
Claim 27
Dependent Claim
23 words
The semiconductor device of claim 17 which functions as a MISFET wherein said unidirectionally oriented epitaxial film serves as a gate oxide layer.
Claim 28
Dependent Claim
24 words
The semiconductor device of claim 17 which functions as a non-volatile semiconductor memory wherein said unidirectionally oriented epitaxial film serves as a floating gate.
Claim 29
Dependent Claim
54 words
The semiconductor device of claim 17 wherein the unidirectionally oriented epitaxial film is a tunnel oxide film having a composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal inclusive of yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5.
Claim 30
Dependent Claim
20 words
The semiconductor device of claim 17 further comprising a floating gate electrode constructed by an epitaxial film of metallic silicon.
Claim 31
Dependent Claim
30 words
The semiconductor device of claim 17 which functions as SOI device wherein said unidirectionally oriented epitaxial film serves as an insulating layer on which a further silicon film is formed.
Claim 32
Dependent Claim
29 words
The semiconductor device of claim 25 having a thin film transistor structure wherein a gate electrode is formed on the silicon film with a gate insulating film intervening therebetween.
Claim 33
Dependent Claim
16 words
The semiconductor device of claim 25 wherein said further silicon film is constructed by epitaxial silicon.
Claim 34
Dependent Claim
16 words
The semiconductor device of claim 27 wherein said further silicon film is constructed by polycrystalline silicon.
Claim 35
Dependent Claim
16 words
The semiconductor device of claim 27 wherein said further silicon film is constructed by amorphous silicon.
Claim 36
Dependent Claim
118 words
A semiconductor device comprising a single crystal silicon substrate and an insulating layer formed on said substrate, characterized in that said insulating layer is a unidirectionally oriented epitaxial film of the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal inclusive of yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5, wherein a rocking curve of reflection on a (002) or (111) plane of said film has a half-value width of up to 1.5°, and said film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 37
Dependent Claim
118 words
A semiconductor device comprising a single crystal silicon substrate and an insulating layer formed on said substrate, characterized in that said insulating layer is a unidirectionally oriented epitaxial film of the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal inclusive of yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5, wherein a rocking curve of reflection on a (002) or (111) plane of said film has a half-value width of up to 1.5°, and said film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm over at least 80% of its surface.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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