US5830805A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electroless deposition equipment or apparatus and method of performing electroless deposition
Assignee: Cornell Research Foundation Inc
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Filing: 1996-11-18
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Granted: 1998-11-03
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Expires: 2016-11-18
Abstract
Abstract An electroless deposition apparatus and a method of electroless deposition that uses a single process chamber for performing multiple processes by moving through the process chamber a variety of fluids one at a time in a sequential order.
Inventors
- 👤 Yosi Shacham-Diamand
- 👤 Valery M. Dubin
- 👤 Chiu H. Ting
- 👤 Bin Zhao
- 👤 Prahalad K. Vasudev
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 22:31
CPC Classifications
C; C23; C23C; C23C18/00; C23C18/16; C23C18/1601; C23C18/1633; C23C18/1675; C23C18/1683; H; H10; H10P; H10P14/00; H10P14/40; H10P14/46; C23C18/1619; Y; Y10; Y10S; Y10S438/00; Y10S438/907; Y10S438/908; Y10S438/913
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
133 words
A method for processing a semiconductor wafer using electroless deposition that subjects the wafer to more than one processing fluid in a sealed process chamber while retaining the wafer in said sealed process chamber and allowing the processing of wafers to proceed in the absence of air, comprising the following steps: introducing the first processing fluid from a distribution system into a sealed process chamber to process the wafer; removing the first processing fluid from said sealed process chamber to said distribution system after processing the wafer; introducing the next processing fluid from said distribution system into said sealed process chamber to process the wafer; and removing the next processing fluid from said sealed process chamber to said distribution system after processing the wafer while retaining the wafer in said sealed process chamber.
Claim 2
Independent Claim
133 words
A method for processing a semiconductor wafer using electroless deposition that subjects the wafer to more than one processing fluid in a sealed process chamber while retaining the wafer in said sealed process chamber and allowing the processing of wafers to proceed in the absence of air, comprising the following steps: introducing the first processing fluid from a distribution system into a sealed process chamber to process the wafer; removing the first processing fluid from said sealed process chamber to said distribution system after processing the wafer; introducing the next processing fluid from said distribution system into said sealed process chamber to process the wafer; and removing the next processing fluid from said sealed process chamber to said distribution system after processing the wafer while retaining the wafer in said sealed process chamber.
Claim 3
Dependent Claim
21 words
The method of claim 1 further comprising the step of dispersing the processing fluid in a uniform flow across the wafer.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein said sealed process chamber is a full immersion type chamber.
Claim 5
Dependent Claim
16 words
The method of claim 1 wherein said sealed process chamber is a spray immersion type chamber.
Claim 6
Dependent Claim
36 words
The method of claim 1 further comprising the step of re-circulating the first processing fluid and the next processing fluid from said sealed process chamber through a temperature system, a filtration system, and a pump system.
Claim 7
Independent Claim
152 words
A method for processing a semiconductor wafer using electroless deposition that uses a sealed process chamber to subject the wafer to more than one processing fluid while retaining the wafer in said sealed process chamber and allowing the processing of wafers to proceed in the absence of air, comprising the following steps: adding the first processing fluid into a sealed process chamber through an inlet; containing the first processing fluid in said sealed process chamber while the first fluid processes the semiconductor wafer; removing the first processing fluid from said sealed process chamber through an outlet after processing the semiconductor wafer; adding the next processing fluid into said sealed process chamber through said inlet; containing the next processing fluid in said sealed process chamber while the next processing fluid processes the semiconductor wafer; and removing the next processing fluid from said sealed process chamber through said outlet after processing the semiconductor wafer.
Claim 8
Independent Claim
152 words
A method for processing a semiconductor wafer using electroless deposition that uses a sealed process chamber to subject the wafer to more than one processing fluid while retaining the wafer in said sealed process chamber and allowing the processing of wafers to proceed in the absence of air, comprising the following steps: adding the first processing fluid into a sealed process chamber through an inlet; containing the first processing fluid in said sealed process chamber while the first fluid processes the semiconductor wafer; removing the first processing fluid from said sealed process chamber through an outlet after processing the semiconductor wafer; adding the next processing fluid into said sealed process chamber through said inlet; containing the next processing fluid in said sealed process chamber while the next processing fluid processes the semiconductor wafer; and removing the next processing fluid from said sealed process chamber through said outlet after processing the semiconductor wafer.
Claim 9
Dependent Claim
23 words
The method of claim 6 further comprising a tubular housing for the semiconductor wafer, said housing rotatably mounted within said sealed process chamber.
Claim 10
Dependent Claim
21 words
The method of claim 7 wherein said housing has the semiconductor wafer mounted on the inside surface of said hollow housing.
Claim 11
Dependent Claim
21 words
The method of claim 7 wherein said housing has the semiconductor wafer mounted on the outside surface of said hollow housing.
Claim 12
Dependent Claim
24 words
The method of claim 8 further comprising an inner core inside said rotatably mounted housing; said inner core mounted to said sealed process chamber.
Claim 13
Dependent Claim
27 words
The method of claim 10 wherein the gap between said inside surface of said housing and said inner core is preferably between 10 mm and 50 mm.
Claim 14
Dependent Claim
27 words
The method of claim 9 wherein the gap between said outside surface of said housing and said outer container is preferably between 10 mm and 50 mm.
Claim 15
Dependent Claim
61 words
The method of claim 6 wherein the gap between said processing of the first processing fluid further comprises the step of dispersing the first processing fluid in a uniform flow across the semiconductor wafer and wherein the processing of the next processing fluid further comprises the step of dispersing the next processing fluid in a uniform flow across the semiconductor wafer.
Claim 16
Dependent Claim
15 words
The method of claim 13 wherein said steps of dispersing further comprises a spray bar.
Claim 17
Dependent Claim
15 words
The method of claim 13 wherein said steps of dispersing further comprises a dispersion grate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-02 | 2002-05-04 | 2002-11-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-02 | 2006-05-04 | 2006-11-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-02 | 2010-05-04 | 2010-11-03 | $7700.00 | Window Closed / Lapsed |