US5853559A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for electroplating a semiconductor substrate
Assignee: Mitsubishi Electric Corp
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Filing: 1997-07-09
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Granted: 1998-12-29
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Expires: 2017-07-09
Abstract
Abstract An electroplating apparatus includes an electroplating tank having a generally flat base on which a semiconductor substrate may be placed with a surface to be electroplated oriented upwardly. A first seal seals a tank body to the flat base and a second seal seals the tank body to a peripheral portion of the surface of the semiconductor substrate. A substantially sealed volume adjacent the surface of the semiconductor substrate is produced. A gas supply tube for pressurizing the volume and an electrolyte discharge arrangement for discharging electrolyte from the volume when pressurized by a gas introduced through the gas supply tube are also provided. The discharge tube extends through a wall of the tank body to a position immediately above the surface of the semiconductor substrate within the volume.
Inventors
- 👤 Masahiro Tamaki
- 👤 Katsuya Kosaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 07:31
CPC Classifications
C; C25; C25D; C25D7/00; C25D7/12; C25D7/123; C25D17/00; C25D17/02; C25D21/00; C25D21/04; C25D5/00; C25D5/003; C25D5/08
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
120 words
An electroplating apparatus comprising: an electrolyte tank including a base for supporting a semiconductor wafer, a tank body sealable at a first seal to the base to define a volume inside the electrolyte tank, and sealing means for sealing a peripheral portion of an upper surface of a semiconductor wafer supported on the base in the tank to the tank body at a second seal; gas introducing means for pressurizing the volume; and electrolyte discharge means for discharging an electrolyte from the volume pressurized by a gas introduced by the gas introducing means, the electrolyte discharge means including a discharge tube extending through a wall of the tank body to a position immediately above the semiconductor wafer within the volume.
Claim 2
Dependent Claim
120 words
An electroplating apparatus comprising: an electrolyte tank including a base for supporting a semiconductor wafer, a tank body sealable at a first seal to the base to define a volume inside the electrolyte tank, and sealing means for sealing a peripheral portion of an upper surface of a semiconductor wafer supported on the base in the tank to the tank body at a second seal; gas introducing means for pressurizing the volume; and electrolyte discharge means for discharging an electrolyte from the volume pressurized by a gas introduced by the gas introducing means, the electrolyte discharge means including a discharge tube extending through a wall of the tank body to a position immediately above the semiconductor wafer within the volume.
Claim 3
Dependent Claim
24 words
The electroplating apparatus as claimed in claim 1, wherein the discharge tube is disposed in the vicinity of a peripheral region of the volume.
Claim 4
Dependent Claim
24 words
The electroplating apparatus as claimed in claim 1, wherein the electrolyte discharge means includes a means for sucking the electrolyte from inside the volume.
Claim 5
Dependent Claim
42 words
The electroplating apparatus of claim 1, wherein the sealing means comprises a compressible O-ring including a through-hole that is substantially closed only when the tank body is strongly urged against the base and is, otherwise, open for discharging electrolyte from the volume.
Claim 6
Dependent Claim
27 words
The electroplating apparatus of claim 1, wherein the sealing means comprises a compressible O-ring including an electrical conductor for making an electrical contact to the semiconductor wafer.
Claim 7
Dependent Claim
32 words
The electroplating apparatus of claim 5, wherein the O-ring includes a through-hole cooperating with a through-hole in the tank body for supplying a gas to remove the wafer from the semiconductor base.
Claim 8
Independent Claim
124 words
A method of electroplating a semiconductor substrate comprising: placing a semiconductor substrate on a base; placing a tank body on the base, sealing the tank body to the base at a first seal and sealing a peripheral portion of an upper surface of the semiconductor substrate to the tank body at a second seal to define a volume adjacent the semiconductor substrate; supplying an electrolyte to the volume and electroplating an electroplated layer on the upper surface of the semiconductor substrate; and sealing the volume and introducing a gas into the volume to discharge the electrolyte through an electrolyte discharge means including a discharge tube extending through a wall of the tank body to a position immediately above the semiconductor substrate within the volume.
Claim 9
Independent Claim
124 words
A method of electroplating a semiconductor substrate comprising: placing a semiconductor substrate on a base; placing a tank body on the base, sealing the tank body to the base at a first seal and sealing a peripheral portion of an upper surface of the semiconductor substrate to the tank body at a second seal to define a volume adjacent the semiconductor substrate; supplying an electrolyte to the volume and electroplating an electroplated layer on the upper surface of the semiconductor substrate; and sealing the volume and introducing a gas into the volume to discharge the electrolyte through an electrolyte discharge means including a discharge tube extending through a wall of the tank body to a position immediately above the semiconductor substrate within the volume.
Claim 10
Independent Claim
118 words
A method of electroplating a semiconductor substrate comprising: placing a semiconductor substrate on a base; placing a tank body on the base, sealing the tank body to the base at a first seal and sealing a peripheral portion of an upper surface of the semiconductor substrate to the tank body at a second seal to define a volume adjacent the semiconductor substrate; supplying an electrolyte to the volume and electroplating an electroplated layer on the upper surface of the semiconductor substrate; and sucking the electrolyte from above the semiconductor substrate through an electrolyte discharge means including a discharge tube extending through a wall of the tank body to a position immediately above the semiconductor substrate within the volume.
Claim 11
Independent Claim
118 words
A method of electroplating a semiconductor substrate comprising: placing a semiconductor substrate on a base; placing a tank body on the base, sealing the tank body to the base at a first seal and sealing a peripheral portion of an upper surface of the semiconductor substrate to the tank body at a second seal to define a volume adjacent the semiconductor substrate; supplying an electrolyte to the volume and electroplating an electroplated layer on the upper surface of the semiconductor substrate; and sucking the electrolyte from above the semiconductor substrate through an electrolyte discharge means including a discharge tube extending through a wall of the tank body to a position immediately above the semiconductor substrate within the volume.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-12-28 | 2002-06-29 | 2002-12-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-12-28 | 2006-06-29 | 2006-12-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-12-28 | 2010-06-29 | 2010-12-29 | $7700.00 | Window Closed / Lapsed |