Structure and fabrication method for stackable, air-gap-containing low epsilon dielectric layers

Claim 2

A structured dielectric layer containing metal wiring and having a thickness for use in integrated circuit chips comprising: a bottom layer and a top layer, said bottom layer between at least two conductors of said metal wiring includes a patterned dielectric layer having regions separated laterally by air gaps and having a thickness comprising the majority of said structured dielectric layer thickness, said top layer between said conductors formed on said bottom layer and having a thickness less than 1/4 of said structured dielectric layer thickness.

Claim 3

The structured dielectric layer of claim 1 in which said air gaps may be filled with a material selected from the group consisting of vacuum, air, He, Ar, Xe, N 2 , and mixtures thereof.

Claim 4

The structured dielectric layer of claim 1 wherein said top layer includes two or more dielectric layers.

Claim 5

The structured dielectric layer of claim 1 in which the patterned bottom dielectric layer of a single dielectric material is replaced by a patterned multilayer of dielectric material, or by structures formed from etching through one or more dielectric layers to form structures (e.g., pillars or lines) which have a sidewall coating of some other material (e.g., a non-wetting agent).

Claim 6

The structured dielectric layer of claim 1 further including one or more additional structured dielectric layers stacked to form one or more wiring or via levels in an integrated circuit chip.

Claim 7

The structured dielectric layer of wherein at least one of the component dielectrics are selected from the group consisting of diamond-like carbon and fluorinated diamond-like carbon.

Claim 8

The structured dielectric layer of wherein at least one of the component dielectrics are selected from the group consisting of diamond-like carbon and fluorinated diamond-like carbon.

Claim 9

The structured dielectric layer of claim 1 wherein one or more of the component dielectrics may be etch-stop, or diffusion barrier materials.

Claim 10

The structured dielectric layer of claim 1 wherein the bottom layer is patterned with one or more types of structures selected from the group consisting of pillars and lines, said patterned structures being the same throughout the layer (i.e., a small or large repeat length pattern replicated throughout the layer without regard to the pattern of the embedded wiring), or completely personalized for a specific wiring layout.

Claim 11

An interconnect structure comprising: a substate having an upper surface with first conductive regions and first insulating regions, a first structured dielectric layer on said substrate said first structured dielectric layer comprising a bottom layer and a top layer, said bottom layer including a patterned dielectric layer having regions separated laterally by air gaps and having a thickness comprising the majority of said structured dielectric layer thickness, said top layer formed on said bottom layer and having a thickness less than 1/4 of said structured dielectric layer thickness, said first structured dielectric layer further including metal vias contacting said first conductive regions, and further including a second structured dielectric layer including metal lines on said first structured dielectric layer, said second structured dielectric layer comprising a bottom layer and a top layer, said bottom layer between said metal lines including a patterned dielectric layer having regions separated laterally by air gaps and having a thickness comprising the majority of said structured dielectric layer thickness, said top layer between said metal lines formed on said bottom layer and having a thickness less than 1/4 of said structured dielectric layer thickness, wherein some of said metal lines contact said vias.

Claim 12

An interconnect structure comprising: a substate having an upper surface with first conductive regions and first insulating regions, a first structured dielectric layer on said substrate said first structured dielectric layer comprising a bottom layer and a top layer, said bottom layer including a patterned dielectric layer having regions separated laterally by air gaps and having a thickness comprising the majority of said structured dielectric layer thickness, said top layer formed on said bottom layer and having a thickness less than 1/4 of said structured dielectric layer thickness, said first structured dielectric layer further including metal vias contacting said first conductive regions, and further including a second structured dielectric layer including metal lines on said first structured dielectric layer, said second structured dielectric layer comprising a bottom layer and a top layer, said bottom layer between said metal lines including a patterned dielectric layer having regions separated laterally by air gaps and having a thickness comprising the majority of said structured dielectric layer thickness, said top layer between said metal lines formed on said bottom layer and having a thickness less than 1/4 of said structured dielectric layer thickness, wherein some of said metal lines contact said vias.

Claim 13

The structure of claim 1 wherein said regions include dielectric lines.

Claim 14

The structure of claim 1 wherein said regions include dielectric pillars.

Claim 15

An interconnect structure comprising: a substate having an upper surface with first conductive regions and first insulating regions, a first structured dielectric layer on said substrate said first structured dielectric layer comprising a bottom layer and a top layer, said bottom layer including a patterned dielectric layer having regions separated laterally by air gaps and having a thickness comprising the majority of said structured dielectric layer thickness, said top layer formed on said bottom layer and having a thickness less than 1/4 of said structured dielectric layer thickness, said first structured dielectric layer further including metal vias contacting said first conductive regions, and wherein said regions include dielectric lines.

Claim 16

An interconnect structure comprising: a substate having an upper surface with first conductive regions and first insulating regions, a first structured dielectric layer on said substrate said first structured dielectric layer comprising a bottom layer and a top layer, said bottom layer including a patterned dielectric layer having regions separated laterally by air gaps and having a thickness comprising the majority of said structured dielectric layer thickness, said top layer formed on said bottom layer and having a thickness less than 1/4 of said structured dielectric layer thickness, said first structured dielectric layer further including metal vias contacting said first conductive regions, and wherein said regions include dielectric lines.

Claim 17

An interconnect structure comprising: a substate having an upper surface with first conductive regions and first insulating regions, a first structured dielectric layer on said substrate said first structured dielectric layer comprising a bottom layer and a top layer, said bottom layer including a patterned dielectric layer having regions separated laterally by air gaps and having a thickness comprising the majority of said structured dielectric layer thickness, said top layer formed on said bottom layer and having a thickness less than 1/4 of said structured dielectric layer thickness, said first structured dielectric layer further including metal vias contacting said first conductive regions, and wherein said regions include dielectric pillars.

Claim 18

An interconnect structure comprising: a substate having an upper surface with first conductive regions and first insulating regions, a first structured dielectric layer on said substrate said first structured dielectric layer comprising a bottom layer and a top layer, said bottom layer including a patterned dielectric layer having regions separated laterally by air gaps and having a thickness comprising the majority of said structured dielectric layer thickness, said top layer formed on said bottom layer and having a thickness less than 1/4 of said structured dielectric layer thickness, said first structured dielectric layer further including metal vias contacting said first conductive regions, and wherein said regions include dielectric pillars.