US5912499A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pressure transducer comprising a sealed transducer with a rigid diaphragm
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1995-12-22
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Granted: 1999-06-15
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Expires: 2015-12-22
Abstract
Abstract An integrated pressure sensitive transducer incorporating a pressure sensitive structure having a silicon substrate, and at least one monocrystalline silicon diaphragm deformable in a direction perpendicular to the substrate. The diaphragm, which is joined to the substrate at its periphery by means of an etched insulating layer, has a centered insulating stud which bears on the substrate in order to increase the rigidity of the diaphragm. Completing the transducer and for measuring the deformation of the diaphragm is at least one first electrode located in the substrate facing a high deformation region of the diaphragm and remote from the periphery of the diaphragm and the insulating stud, and at least one second electrode facing at least one low deformation region of the diaphragm and in the vicinity of the periphery and/or the insulating stud.
Inventors
- 👤 Bernard Diem
- 👤 Marie-Therese Delaye
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:43
CPC Classifications
B; B81; B81C; B81C1/00; B81C1/00015; B81C1/00134; B81C1/00158; G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0042; G01L9/0051; G01L9/0052; G01L9/0055; G01L9/0072; G01L9/0073; B81B; B81B2201/00; B81B2201/02; B81B2201/0264; Y; Y10; Y10S; Y10S148/00; Y10S148/135; Y10S148/159
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
117 words
An integrated pressure transducer comprising a pressure sensitive structure having a silicon substrate, at least one monocrystalline silicon diaphragm deformable in a direction perpendicular to the substrate, and means for measuring deformations of the diaphragm, said diaphragm being joined to the substrate at its periphery by means of an etched insulating layer, wherein the diaphragm has a substantially centered insulating stud for bearing on the substrate for increasing rigidity of the diaphragm, said transducer further comprising a thermal drift-free reference structure having at least one monocrystalline silicon diaphragm joined to the substrate and made rigid by several insulating studs distributed over its entire surface and bearing on the substrate, and electric contacts formed on said rigid diaphragm.
Claim 2
Dependent Claim
117 words
An integrated pressure transducer comprising a pressure sensitive structure having a silicon substrate, at least one monocrystalline silicon diaphragm deformable in a direction perpendicular to the substrate, and means for measuring deformations of the diaphragm, said diaphragm being joined to the substrate at its periphery by means of an etched insulating layer, wherein the diaphragm has a substantially centered insulating stud for bearing on the substrate for increasing rigidity of the diaphragm, said transducer further comprising a thermal drift-free reference structure having at least one monocrystalline silicon diaphragm joined to the substrate and made rigid by several insulating studs distributed over its entire surface and bearing on the substrate, and electric contacts formed on said rigid diaphragm.
Claim 3
Dependent Claim
31 words
A transducer according to claim 1, wherein the measuring means comprises at least one capacitor, and the silicon film and the substrate are conductive and together form plates of the capacitor.
Claim 4
Dependent Claim
20 words
A transducer according to claim 2, further comprising at least one buried electrode in the substrate facing the deformable diaphragm.
Claim 5
Dependent Claim
19 words
A transducer according to claim 1, further comprising a buried reference electrode in the substrate facing the rigid diaphragm.
Claim 6
Dependent Claim
63 words
A transducer according to claim 2, further comprising at least one first electrode located in the substrate facing a high deformation region of the diaphragm and remote from the periphery of the diaphragm and the insulating stud, and at least one second electrode facing at least one relatively low deformation region of the diaphragm in vicinity of the periphery and the insulating stud.
Claim 7
Dependent Claim
64 words
A transducer according to claim 2, comprising at least one first electrode located in the substrate facing said diaphragm in a first deformable region of the diaphragm and remote from the periphery of the diaphragm and the insulating stud, and at least one second electrode facing said diaphragm in at least one second deformable region of the diaphragm in vicinity of the insulting stud.
Claim 8
Dependent Claim
13 words
A transducer according to claim 1, wherein the diaphragm is circular in plan.
Claim 9
Dependent Claim
152 words
An integrated pressure transducer comprising a pressure sensitive structure having a silicon substrate, at least one monocrystalline silicon diaphragm deformable in a direction perpendicular to the substrate, and means for measuring deformations of the diaphragm, said diaphragm being joined to the substrate at its periphery by means of an etched insulating layer, wherein the diaphragm has a substantially centered insulating stud for bearing on the substrate for increasing rigidity of the diaphragm, and wherein the means for measuring deformation of the diaphragm comprises at least one first electrode located in the substrate facing said diaphragm in a first deformable region of the diaphragm and remote from the periphery of the diaphragm and the insulating stud, and at least one reference electrode facing the same diaphragm in at least a second deformable region of the diaphragm in vicinity of the periphery; said second deformable region being more rigid than said first deformable region.
Claim 10
Dependent Claim
152 words
An integrated pressure transducer comprising a pressure sensitive structure having a silicon substrate, at least one monocrystalline silicon diaphragm deformable in a direction perpendicular to the substrate, and means for measuring deformations of the diaphragm, said diaphragm being joined to the substrate at its periphery by means of an etched insulating layer, wherein the diaphragm has a substantially centered insulating stud for bearing on the substrate for increasing rigidity of the diaphragm, and wherein the means for measuring deformation of the diaphragm comprises at least one first electrode located in the substrate facing said diaphragm in a first deformable region of the diaphragm and remote from the periphery of the diaphragm and the insulating stud, and at least one reference electrode facing the same diaphragm in at least a second deformable region of the diaphragm in vicinity of the periphery; said second deformable region being more rigid than said first deformable region.
Claim 11
Dependent Claim
13 words
A transducer according to claim 8, wherein the diaphragm is circular in plan.
Claim 12
Dependent Claim
30 words
A transducer according to claim 8, wherein the measuring means has at least one capacitor, and the silicon film and substrate are conductive and together form plates of the capacitor.
Claim 13
Dependent Claim
20 words
A transducer according to claim 8, also comprising at least one buried electrode in the substrate facing the deformable diaphragm.
Claim 14
Dependent Claim
47 words
A transducer according to claim 8, further comprising a reference structure having at least one monocrystalline silicon diaphragm joined to the substrate and made rigid by several insulating studs distributed over its entire surface and bearing on the substrate, electric contacts being formed on said rigid diaphragm.
Claim 15
Dependent Claim
19 words
A transducer according to claim 12, further comprising a buried reference electrode in the substrate facing the rigid diaphragm.
Claim 16
Dependent Claim
156 words
An integrated pressure transducer comprising a pressure sensitive structure having a silicon substrate, at least one monocrystalline silicon diaphragm deformable in a direction perpendicular to the substrate, and means for measuring deformations of the diaphragm, said diaphragm being joined to the substrate at its periphery by means of an etched insulating layer, where the diaphragm has a substantially centered insulating stud for bearing on the substrate for increasing rigidity of the diaphragm, and wherein the means for measuring deformation of the diaphragm comprises at least one first electrode located in the substrate facing said diaphragm in a first deformable region of the diaphragm and remote from the periphery of the diaphragm and the insulating stud, and at least one second electrode facing the same diaphragm in at least a second deformable region of the diaphragm in vicinity of the periphery and the insulating stud; said second deformable region being more rigid than said first deformable region.
Claim 17
Dependent Claim
156 words
An integrated pressure transducer comprising a pressure sensitive structure having a silicon substrate, at least one monocrystalline silicon diaphragm deformable in a direction perpendicular to the substrate, and means for measuring deformations of the diaphragm, said diaphragm being joined to the substrate at its periphery by means of an etched insulating layer, where the diaphragm has a substantially centered insulating stud for bearing on the substrate for increasing rigidity of the diaphragm, and wherein the means for measuring deformation of the diaphragm comprises at least one first electrode located in the substrate facing said diaphragm in a first deformable region of the diaphragm and remote from the periphery of the diaphragm and the insulating stud, and at least one second electrode facing the same diaphragm in at least a second deformable region of the diaphragm in vicinity of the periphery and the insulating stud; said second deformable region being more rigid than said first deformable region.
Claim 18
Dependent Claim
13 words
A transducer according to claim 14, wherein the diaphragm is circular in plan.
Claim 19
Dependent Claim
31 words
A transducer according to claim 14, wherein the measuring means has at least one capacitor, and the silicon film and the substrate are conductive and together form plates of the capacitor.
Claim 20
Dependent Claim
20 words
A transducer according to claim 14 further comprising at least one buried electrode in the substrate facing the deformable diaphragm.
Claim 21
Dependent Claim
47 words
A transducer according to claim 14, further comprising a reference structure having at least one monocrystalline silicon diaphragm joined to the substrate and made rigid by several insulating studs distributed over its entire surface and bearing on the substrate, electric contacts being formed on said rigid diaphragm.
Claim 22
Dependent Claim
19 words
A transducer according to claim 18, also comprising a buried reference electrode in the substrate facing the rigid diaphragm.
Claim 23
Dependent Claim
153 words
An integrated pressure transducer comprising a pressure sensitive structure having a silicon substrate, at least one monocrystalline silicon diaphragm deformable in a direction perpendicular to the substrate, and means for measuring deformations of the diaphragm, said diaphragm being joined to the substrate at its periphery by means of an etched insulating layer, wherein the diaphragm has a substantially centered insulating stud for bearing on the substrate for increasing rigidity of the diaphragm, and wherein the means for measuring deformation of the diaphragm comprises at least one first electrode located in the substrate facing said diaphragm in a first deformable region of the diaphragm and remote from the periphery of the diaphragm and the insulating stud, and at least one reference electrode facing the same diaphragm in at least a second deformable region of the diaphragm in vicinity of the insulating stud; said second deformable region being more rigid than said first deformable region.
Claim 24
Dependent Claim
153 words
An integrated pressure transducer comprising a pressure sensitive structure having a silicon substrate, at least one monocrystalline silicon diaphragm deformable in a direction perpendicular to the substrate, and means for measuring deformations of the diaphragm, said diaphragm being joined to the substrate at its periphery by means of an etched insulating layer, wherein the diaphragm has a substantially centered insulating stud for bearing on the substrate for increasing rigidity of the diaphragm, and wherein the means for measuring deformation of the diaphragm comprises at least one first electrode located in the substrate facing said diaphragm in a first deformable region of the diaphragm and remote from the periphery of the diaphragm and the insulating stud, and at least one reference electrode facing the same diaphragm in at least a second deformable region of the diaphragm in vicinity of the insulating stud; said second deformable region being more rigid than said first deformable region.
Claim 25
Dependent Claim
13 words
A transducer according to claim 20, wherein the diaphragm is circular in plan.
Claim 26
Dependent Claim
30 words
A transducer according to claim 20, wherein the measuring means has at least one capacitor, and the silicon film and the substrate are conductive and form plates of the capacitor.
Claim 27
Dependent Claim
20 words
A transducer according to claim 20, also comprising at least one buried electrode in the substrate facing the deformable diaphragm.
Claim 28
Dependent Claim
47 words
A transducer according to claim 20, further comprising a reference structure having at least one monocrystalline silicon diaphragm joined to the substrate and made rigid by several insulating studs distributed over its entire surface and bearing on the substrate, electric contacts being formed on said rigid diaphragm.
Claim 29
Dependent Claim
19 words
A transducer according to claim 24, also comprising a buried reference electrode in the substrate facing the rigid diaphragm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-06-14 | 2002-12-14 | 2003-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-06-14 | 2006-12-14 | 2007-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-06-14 | 2010-12-14 | 2011-06-15 | $7700.00 | Window Closed / Lapsed |