US5948573A — Method of designing mask pattern to be formed in …

Claim 1

Independent Claim 168 words

A method of designing a mask pattern to be formed in a mask used for manufacturing an integrated circuit by forming a pattern in a first layer deposited on a substrate, on the basis of lithography to which said mask is applied, then depositing a second layer on the substrate including the patterned first layer and flattening the second layer by a chemical/mechanical polishing process, the method comprising the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) providing a dummy pattern to each of the meshes(i,j) which have been found in the step (B) to have the average pattern area ratios β(i,j) smaller than a predetermined value.

Claim 2

Independent Claim 168 words

A method of designing a mask pattern to be formed in a mask used for manufacturing an integrated circuit by forming a pattern in a first layer deposited on a substrate, on the basis of lithography to which said mask is applied, then depositing a second layer on the substrate including the patterned first layer and flattening the second layer by a chemical/mechanical polishing process, the method comprising the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) providing a dummy pattern to each of the meshes(i,j) which have been found in the step (B) to have the average pattern area ratios β(i,j) smaller than a predetermined value.

Claim 3

Dependent Claim 35 words

The method according to claim 1, wherein the average pattern area ratio β(i,j) is determined on the basis of the following equations (1-1) and (1-2). ##EQU10## wherein q=0, 1, 2, . . . , Q.

Claim 4

Dependent Claim 63 words

The method according to claim 1, wherein a value of a pattern area ratio α U (i,j) or a value of an average pattern area ratio β U (i,j) of a mask pattern in a mask used for forming a pattern in an underlayer provided under the first layer is incorporated for determining the pattern area ratio α 0 (i,j) of each mesh(i,j).

Claim 5

Dependent Claim 125 words

The method according to claim 3, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is determined on the basis of the following equation (2) when the underlayer is not chemical/mechanical-polished, and the pattern area ratio α 0 (i,j) of each mesh(i,j) is determined on the basis of the following equation (3) when the underlayer is chemical/mechanical-polished, α.sub.0 (i,j)=α.sub.S (i,j)+(h.sub.U /h.sub.S)·α.sub.U (i,j) (2) α.sub.0 (i,j)=α.sub.S (i,j)+(h.sub.U /h.sub.S)·β.sub.U (i,j) (3) wherein α S (i,j) is a pattern area ratio of the mesh(i,j) when it is assumed that no underlayer exists under the first layer, h S is a difference in level arising in the first layer after the formation of the pattern and h U is a difference in level arising in the underlayer.

Claim 6

Dependent Claim 91 words

The method according to claim 1, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase ratio I determined by the thickness of the second layer to be deposited on the substrate including the patterned first layer or on the basis of a pattern area increase ratio I determined by the thickness of the pattern to be formed in the first layer and the thickness of the second layer to be deposited on the substrate including the patterned first layer.

Claim 7

Dependent Claim 132 words

The method according to claim 5, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase amount ΔS, ΔS being a pattern area increase amount determined by the thickness of the second layer to be deposited on the substrate including the patterned first layer or a pattern area increase amount determined by the thickness of the pattern to be formed in the first layer and the thickness of the second layer to be deposited on the substrate including the patterned first layer, ΔS being determined by multiplying I by L, L being a circumferential length of a portion of the second layer having a projected shape and being to be deposited on the pattern to be formed in the first layer.

Claim 8

Dependent Claim 100 words

The method according to claim 6, wherein, when the portion of the second layer having a projected shape and being to be deposited on the pattern to be formed in the first layer has a vertical side wall, the pattern area increase ratio I is determined on the basis of the following equation (4), I=X.sub.0 ×(r.sub.H /r.sub.V) (4) wherein X 0 is a thickness of the second layer to be deposited, r H is a deposition rate of the second layer in a horizontal direction and r V is a deposition rate of the second layer in a vertical direction.

Claim 9

Dependent Claim 98 words

The method according to claim 6, wherein, when the portion of the second layer having a projected shape and being to be deposited on the pattern to be formed in the first layer has an inclined side wall having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (5), I=(h.sub.0 -2X.sub.0) cot θ/2 (5) wherein h 0 is a thickness of the pattern to be formed in the first layer and X 0 is a thickness of the second layer to be deposited.

Claim 10

Dependent Claim 191 words

The method according to claim 6, wherein, when the second layer has a lower layer and an upper layer and a portion of the lower layer having a projected shape and being to be deposited on the pattern to be formed in the first layer has an inclined side wall having an inclination angle of θ from a horizontal direction and a portion of the upper layer to be deposited on the inclined side wall of the lower layer has an inclined surface having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (6), I=(h.sub.0 -2Y.sub.1) cot θ/2+Y.sub.2 (r.sub.2H /r.sub.2V -cos θ)/sin θ (6) wherein h 0 is a thickness of the pattern to be formed in the first layer, Y 1 is a thickness of the lower layer to be deposited, Y 2 is a thickness of the upper layer to be deposited, r 2H is a deposition rate of the upper layer in a horizontal direction and r 2V is a deposition rate of said portion of the upper layer in a normal direction.

Claim 11

Independent Claim 156 words

A method of designing a mask pattern to be formed in a mask used for manufacturing an integrated circuit by forming a pattern in a substrate, on the basis of lithography to which said mask is applied, then depositing a layer on the substrate and flattening the layer by a chemical/mechanical polishing process, the method comprising the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) providing a dummy pattern to each of the meshes(i,j) which have been found in the step (B) to have the average pattern area ratios β(i,j) smaller than a predetermined value.

Claim 12

Independent Claim 156 words

A method of designing a mask pattern to be formed in a mask used for manufacturing an integrated circuit by forming a pattern in a substrate, on the basis of lithography to which said mask is applied, then depositing a layer on the substrate and flattening the layer by a chemical/mechanical polishing process, the method comprising the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) providing a dummy pattern to each of the meshes(i,j) which have been found in the step (B) to have the average pattern area ratios β(i,j) smaller than a predetermined value.

Claim 13

Dependent Claim 35 words

The method according to claim 10, wherein the average pattern area ratio β(i,j) is determined on the basis of the following equations (1-1) and (1-2), ##EQU11## wherein q=0, 1, 2, . . . , Q.

Claim 14

Dependent Claim 78 words

The method according to claim 10, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase ratio I determined by the thickness of the layer to be deposited on the substrate or on the basis of a pattern area increase ratio I determined by the thickness of the pattern to be formed in the substrate and the thickness of the layer to be deposited on the substrate.

Claim 15

Dependent Claim 117 words

The method according to claim 12, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase amount ΔS, ΔS being a pattern area increase amount determined by the thickness of the layer to be deposited on the substrate or a pattern area increase amount determined by the thickness of the pattern to be formed in the substrate and the thickness of the layer to be deposited on the substrate, ΔS being determined by multiplying I by L, L being a circumferential length of a portion of the layer having a projected shape and being to be deposited on the pattern to be formed in the substrate.

Claim 16

Dependent Claim 95 words

The method according to claim 13, wherein, when the portion of the layer having a projected shape and being to be deposited on the pattern to be formed in the substrate has a vertical side wall, the pattern area increase ratio I is determined on the basis of the following equation (4), I=X.sub.0 ×(r.sub.H /r.sub.V) (4) wherein X 0 is a thickness of the layer to be deposited, r H is a deposition rate of the layer in a horizontal direction and r V is a deposition rate of the layer in a vertical direction.

Claim 17

Dependent Claim 94 words

The method according to claim 13, wherein, when the portion of the layer having a projected shape and being to be deposited on the pattern to be formed in the substrate has an inclined side wall having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (5), I=(h.sub.0 -2X.sub.0) cot θ/2 (5) wherein h 0 is a thickness of the pattern to be formed in the substrate and X 0 is a thickness of the layer to be deposited.

Claim 18

Dependent Claim 188 words

The method according to claim 13, wherein, when the layer has a lower layer and an upper layer and a portion of the lower layer having a projected shape and being to be deposited on the pattern to be formed in the substrate has an inclined side wall having an inclination angle of θ from a horizontal direction and a portion of the upper layer to be deposited on the inclined side wall of the lower layer has an inclined surface having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (6), I=(h.sub.0 -2Y.sub.1) cot θ/2+Y.sub.2 (r.sub.2H /r.sub.2V -cos θ)/sin θ (6) wherein h 0 is a thickness of the pattern to be formed in the substrate, Y 1 is a thickness of the lower layer to be deposited, Y 2 is a thickness of the upper layer to be deposited, r 2H is a deposition rate of the upper layer in a horizontal direction and r 2V is a deposition rate of said portion of the upper layer in a normal direction.

Claim 19

Independent Claim 172 words

A method of designing a mask pattern to be formed in a mask used for manufacturing an integrated circuit by forming a pattern in a starting substrate, on the basis of lithography to which said mask is applied, then bonding the front surface of the starting substrate to a supporting substrate and flattening the starting substrate from the back surface of the starting substrate by a chemical/mechanical polishing process, the method comprising the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) providing a dummy pattern to each of the meshes(i,j) which have been found in the step (B) to have the average pattern area ratios β(i,j) smaller than a predetermined value.

Claim 20

Independent Claim 172 words

A method of designing a mask pattern to be formed in a mask used for manufacturing an integrated circuit by forming a pattern in a starting substrate, on the basis of lithography to which said mask is applied, then bonding the front surface of the starting substrate to a supporting substrate and flattening the starting substrate from the back surface of the starting substrate by a chemical/mechanical polishing process, the method comprising the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) providing a dummy pattern to each of the meshes(i,j) which have been found in the step (B) to have the average pattern area ratios β(i,j) smaller than a predetermined value.

Claim 21

Dependent Claim 35 words

The method according to claim 17, wherein the average pattern area ratio β(i,j) is determined on the basis of the following equations (1-1) and (1-2), ##EQU12## wherein q=0, 1, 2, . . . , Q.

Claim 22

Independent Claim 158 words

A method of designing a mask pattern to be formed in a mask used for manufacturing an integrated circuit by forming a pattern in a first layer deposited on a substrate, on the basis of lithography to which said mask is applied, then depositing a second layer on the substrate including the patterned first layer and flattening the second layer by a chemical/mechanical polishing process, the method comprising the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) rearranging the pattern in the mask pattern so as to decrease the fluctuation of the average pattern area ratios β(i,j).

Claim 23

Independent Claim 158 words

A method of designing a mask pattern to be formed in a mask used for manufacturing an integrated circuit by forming a pattern in a first layer deposited on a substrate, on the basis of lithography to which said mask is applied, then depositing a second layer on the substrate including the patterned first layer and flattening the second layer by a chemical/mechanical polishing process, the method comprising the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) rearranging the pattern in the mask pattern so as to decrease the fluctuation of the average pattern area ratios β(i,j).

Claim 24

Dependent Claim 35 words

The method according to claim 19, wherein the average pattern area ratio β(i,j) is determined on the basis of the following equations (1-1) and (1-2), ##EQU13## wherein q=0, 1, 2, . . . , Q.

Claim 25

Dependent Claim 42 words

The method according to claim 19, wherein the pattern in the mask pattern belongs to any of a plurality of circuit block, and the rearrangement of the pattern in the step (C) includes an increase of the size of the circuit block.

Claim 26

Dependent Claim 91 words

The method according to claim 19, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase ratio I determined by the thickness of the second layer to be deposited on the substrate including the patterned first layer or on the basis of a pattern area increase ratio I determined by the thickness of the pattern to be formed in the first layer and the thickness of the second layer to be deposited on the substrate including the patterned first layer.

Claim 27

Dependent Claim 132 words

The method according to claim 22, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase amount ΔS, ΔS being a pattern area increase amount determined by the thickness of the second layer to be deposited on the substrate including the patterned first layer or a pattern area increase amount determined by the thickness of the pattern to be formed in the first layer and the thickness of the second layer to be deposited on the substrate including the patterned first layer, ΔS being determined by multiplying I by L, L being a circumferential length of a portion of the second layer having a projected shape and being to be deposited on the pattern to be formed in the first layer.

Claim 28

Dependent Claim 100 words

The method according to claim 23, wherein, when the portion of the second layer having a projected shape and being to be deposited on the pattern to be formed in the first layer has a vertical side wall, the pattern area increase ratio I is determined on the basis of the following equation (4), I=X.sub.0 ×(r.sub.H /r.sub.V) (4) wherein X 0 is a thickness of the second layer to be deposited, r H is a deposition rate of the second layer in a horizontal direction and r V is a deposition rate of the second layer in a vertical direction.

Claim 29

Dependent Claim 98 words

The method according to claim 23, wherein, when the portion of the second layer having a projected shape and being to be deposited on the pattern to be formed in the first layer has an inclined side wall having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (5), I=(h.sub.0 -2X.sub.0) cot θ/2 (5) wherein h 0 is a thickness of the pattern to be formed in the first layer and X 0 is a thickness of the second layer to be deposited.

Claim 30

Dependent Claim 191 words

The method according to claim 23, wherein, when the second layer has a lower layer and an upper layer and a portion of the lower layer having a projected shape and being to be deposited on the pattern to be formed in the first layer has an inclined side wall having an inclination angle of θ from a horizontal direction and a portion of the upper layer to be deposited on the inclined side wall of the lower layer has an inclined surface having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (6), I=(h.sub.0 -2Y.sub.1) cot θ/2+Y.sub.2 (r.sub.2H /r.sub.2V -cos θ)/sin θ (6) wherein h 0 is a thickness of the pattern to be formed in the first layer, Y 1 is a thickness of the lower layer to be deposited, Y 2 is a thickness of the upper layer to be deposited, r 2H is a deposition rate of the upper layer in a horizontal direction and r 2V is a deposition rate of said portion of the upper layer in a normal direction.

Claim 31

Independent Claim 146 words

A method of designing a mask pattern to be formed in a mask used for manufacturing an integrated circuit by forming a pattern in a substrate, on the basis of lithography to which said mask is applied, then depositing a layer on the substrate and flattening the layer by a chemical/mechanical polishing process, the method comprising the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) rearranging the pattern in the mask pattern so as to decrease the fluctuation of the average pattern area ratios β(i,j).

Claim 32

Independent Claim 146 words

A method of designing a mask pattern to be formed in a mask used for manufacturing an integrated circuit by forming a pattern in a substrate, on the basis of lithography to which said mask is applied, then depositing a layer on the substrate and flattening the layer by a chemical/mechanical polishing process, the method comprising the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) rearranging the pattern in the mask pattern so as to decrease the fluctuation of the average pattern area ratios β(i,j).

Claim 33

Dependent Claim 35 words

The method according to claim 27, wherein the average pattern area ratio β(i,j) is determined on the basis of the following equations (1-1) and (1-2), ##EQU14## wherein q=0, 1, 2, . . . , Q.

Claim 34

Dependent Claim 42 words

The method according to claim 27, wherein the pattern in the mask pattern belongs to any of a plurality of circuit block, and the rearrangement of the pattern in the step (C) includes an increase of the size of the circuit block.

Claim 35

Dependent Claim 78 words

The method according to claim 27, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase ratio I determined by the thickness of the layer to be deposited on the substrate or on the basis of a pattern area increase ratio I determined by the thickness of the pattern to be formed in the substrate and the thickness of the layer to be deposited on the substrate.

Claim 36

Dependent Claim 117 words

The method according to claim 30, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase amount ΔS, ΔS being a pattern area increase amount determined by the thickness of the layer to be deposited on the substrate or a pattern area increase amount determined by the thickness of the pattern to be formed in the substrate and the thickness of the layer to be deposited on the substrate, ΔS being determined by multiplying I by L, L being a circumferential length of a portion of the layer having a projected shape and being to be deposited on the pattern to be formed in the substrate.

Claim 37

Dependent Claim 95 words

The method according to claim 31, wherein, when the portion of the layer having a projected shape and being to be deposited on the pattern to be formed in the substrate has a vertical side wall, the pattern area increase ratio I is determined on the basis of the following equation (4), I=X.sub.0 ×(r.sub.H /r.sub.V) (4) wherein X 0 is a thickness of the layer to be deposited, r H is a deposition rate of the layer in a horizontal direction and r V is a deposition rate of the layer in a vertical direction.

Claim 38

Dependent Claim 94 words

The method according to claim 31, wherein, when the portion of the layer having a projected shape and being to be deposited on the pattern to be formed in the substrate has an inclined side wall having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (5), I=(h.sub.0 -2X.sub.0) cot θ/2 (5) wherein h 0 is a thickness of the pattern to be formed in the substrate and X 0 is a thickness of the layer to be deposited.

Claim 39

Dependent Claim 188 words

The method according to claim 31, wherein, when the layer has a lower layer and an upper layer and a portion of the lower layer having a projected shape and being to be deposited on the pattern to be formed in the substrate has an inclined side wall having an inclination angle of θ from a horizontal direction and a portion of the upper layer to be deposited on the inclined side wall of the lower layer has an inclined surface having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (6), I=(h.sub.0 -2Y.sub.1) cot θ/2+Y.sub.2 (r.sub.2H /r.sub.2V -cos θ)/sin θ (6) wherein h 0 is a thickness of the pattern to be formed in the substrate, Y 1 is a thickness of the lower layer to be deposited, Y 2 is a thickness of the upper layer to be deposited, r 2H is a deposition rate of the upper layer in a horizontal direction and r 2V is a deposition rate of said portion of the upper layer in a normal direction.

Claim 40

Independent Claim 162 words

A method of designing a mask pattern to be formed in a mask used for manufacturing an integrated circuit by forming a pattern in a starting substrate, on the basis of lithography to which said mask is applied, then bonding the front surface of the starting substrate to a supporting substrate and flattening the starting substrate from the back surface of the starting substrate by a chemical/mechanical polishing process, the method comprising the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) rearranging the pattern in the mask pattern so as to decrease the fluctuation of the average pattern area ratios β(i,j).

Claim 41

Independent Claim 162 words

A method of designing a mask pattern to be formed in a mask used for manufacturing an integrated circuit by forming a pattern in a starting substrate, on the basis of lithography to which said mask is applied, then bonding the front surface of the starting substrate to a supporting substrate and flattening the starting substrate from the back surface of the starting substrate by a chemical/mechanical polishing process, the method comprising the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) rearranging the pattern in the mask pattern so as to decrease the fluctuation of the average pattern area ratios β(i,j).

Claim 42

Dependent Claim 35 words

The method according to claim 35, wherein the average pattern area ratio β(i,j) is determined on the basis of the following equations (1-1) and (1-2), ##EQU15## wherein q=0, 1, 2, . . . , Q.

Claim 43

Dependent Claim 42 words

The method according to claim 35, wherein the pattern in the mask pattern belongs to any of a plurality of circuit block, and the rearrangement of the pattern in the step (C) includes an increase of the size of the circuit block.

Claim 44

Independent Claim 175 words

A method of manufacturing an integrated circuit by forming a pattern in a first layer deposited on a substrate, then depositing a second layer on the substrate including the patterned first layer and flattening the second layer by a chemical/mechanical polishing process, wherein a mask pattern to be formed in a mask is designed by the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) providing a dummy pattern to each of the meshes(i,j) which have been found in the step (B) to have the average pattern area ratios β(i,j) smaller than a predetermined value, and the pattern is formed in the first layer on the basis of lithography to which said mask is applied.

Claim 45

Independent Claim 175 words

A method of manufacturing an integrated circuit by forming a pattern in a first layer deposited on a substrate, then depositing a second layer on the substrate including the patterned first layer and flattening the second layer by a chemical/mechanical polishing process, wherein a mask pattern to be formed in a mask is designed by the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) providing a dummy pattern to each of the meshes(i,j) which have been found in the step (B) to have the average pattern area ratios β(i,j) smaller than a predetermined value, and the pattern is formed in the first layer on the basis of lithography to which said mask is applied.

Claim 46

Dependent Claim 35 words

The method according to claim 38, wherein the average pattern area ratio β(i,j) is determined on the basis of the following equations (1-1) and (1-2), ##EQU16## wherein q=0, 1, 2, . . . , Q.

Claim 47

Dependent Claim 63 words

The method according to claim 38, wherein a value of a pattern area ratio α U (i,j) or a value of an average pattern area ratio β U (i,j) of a mask pattern in a mask used for forming a pattern in an underlayer provided under the first layer is incorporated for determining the pattern area ratio α 0 (i,j) of each mesh(i,j).

Claim 48

Dependent Claim 125 words

The method according to claim 40, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is determined on the basis of the following equation (2) when the underlayer is not chemical/mechanical-polished, and the pattern area ratio α 0 (i,j) of each mesh(i,j) is determined on the basis of the following equation (3) when the underlayer is chemical/mechanical-polished, α.sub.0 (i,j)=α.sub.S (i,j)+(h.sub.U /h.sub.S)·α.sub.U (i,j) (2) α.sub.0 (i,j)=α.sub.S (i,j)+(h.sub.U /h.sub.S)·β.sub.U (i,j) (3) wherein α 0 (i,j) is a pattern area ratio of the mesh(i,j) when it is assumed that no underlayer exists under the first layer, h S is a difference in level arising in the first layer after the formation of the pattern and h U is a difference in level arising in the underlayer.

Claim 49

Dependent Claim 91 words

The method according to claim 38, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase ratio I determined by the thickness of the second layer to be deposited on the substrate including the patterned first layer or on the basis of a pattern area increase ratio I determined by the thickness of the pattern to be formed in the first layer and the thickness of the second layer to be deposited on the substrate including the patterned first layer.

Claim 50

Dependent Claim 132 words

The method according to claim 42, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase amount ΔS, ΔS being a pattern area increase amount determined by the thickness of the second layer to be deposited on the substrate including the patterned first layer or a pattern area increase amount determined by the thickness of the pattern to be formed in the first layer and the thickness of the second layer to be deposited on the substrate including the patterned first layer, ΔS being determined by multiplying I by L, L being a circumferential length of a portion of the second layer having a projected shape and being to be deposited on the pattern to be formed in the first layer.

Claim 51

Dependent Claim 100 words

The method according to claim 43, wherein, when the portion of the second layer having a projected shape and being to be deposited on the pattern to be formed in the first layer has a vertical side wall, the pattern area increase ratio I is determined on the basis of the following equation (4), I=X.sub.0 ×(r.sub.H /r.sub.V) (4) wherein X 0 is a thickness of the second layer to be deposited, r H is a deposition rate of the second layer in a horizontal direction and r V is a deposition rate of the second layer in a vertical direction.

Claim 52

Dependent Claim 98 words

The method according to claim 43, wherein, when the portion of the second layer having a projected shape and being to be deposited on the pattern to be formed in the first layer has an inclined side wall having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (5), I=(h.sub.0 -2X.sub.0) cot θ/2 (5) wherein h 0 is a thickness of the pattern to be formed in the first layer and X 0 is a thickness of the second layer to be deposited.

Claim 53

Dependent Claim 191 words

The method according to claim 43, wherein, when the second layer has a lower layer and an upper layer and a portion of the lower layer having a projected shape and being to be deposited on the pattern to be formed in the first layer has an inclined side wall having an inclination angle of θ from a horizontal direction and a portion of the upper layer to be deposited on the inclined side wall of the lower layer has an inclined surface having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (6), I=(h.sub.0 -2Y.sub.1) cot θ/2+y.sub.2 (r.sub.2H /r.sub.V -cos θ)/sin θ (6) wherein h 0 is a thickness of the pattern to be formed in the first layer, Y 1 is a thickness of the lower layer to be deposited, Y 2 is a thickness of the upper layer to be deposited, r 2H is a deposition rate of the upper layer in a horizontal direction and r 2V is a deposition rate of said portion of the upper layer in a normal direction.

Claim 54

Independent Claim 162 words

A method of manufacturing an integrated circuit by forming a pattern in a substrate, then depositing a layer on the substrate and flattening the layer by a chemical/mechanical polishing process, wherein a mask pattern to be formed in a mask is designed by the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) providing a dummy pattern to each of the meshes(i,j) which have been found in the step (B) to have the average pattern area ratios β(i,j) smaller than a predetermined value, and the pattern is formed in the substrate on the basis of lithography to which said mask is applied.

Claim 55

Independent Claim 162 words

A method of manufacturing an integrated circuit by forming a pattern in a substrate, then depositing a layer on the substrate and flattening the layer by a chemical/mechanical polishing process, wherein a mask pattern to be formed in a mask is designed by the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) providing a dummy pattern to each of the meshes(i,j) which have been found in the step (B) to have the average pattern area ratios β(i,j) smaller than a predetermined value, and the pattern is formed in the substrate on the basis of lithography to which said mask is applied.

Claim 56

Dependent Claim 35 words

The method according to claim 47, wherein the average pattern area ratio β(i,j) is determined on the basis of the following equations (1-1) and (1-2), ##EQU17## wherein q=0, 1, 2, . . . , Q.

Claim 57

Dependent Claim 78 words

The method according to claim 47, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase ratio I determined by the thickness of the layer to be deposited on the substrate or on the basis of a pattern area increase ratio I determined by the thickness of the pattern to be formed in the substrate and the thickness of the layer to be deposited on the substrate.

Claim 58

Dependent Claim 117 words

The method according to claim 49, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase amount ΔS, ΔS being a pattern area increase amount determined by the thickness of the layer to be deposited on the substrate or a pattern area increase amount determined by the thickness of the pattern to be formed in the substrate and the thickness of the layer to be deposited on the substrate, ΔS being determined by multiplying I by L, L being a circumferential length of a portion of the layer having a projected shape and being to be deposited on the pattern to be formed in the substrate.

Claim 59

Dependent Claim 95 words

The method according to claim 50, wherein, when the portion of the layer having a projected shape and being to be deposited on the pattern to be formed in the substrate has a vertical side wall, the pattern area increase ratio I is determined on the basis of the following equation (4), I=X.sub.0 ×(r.sub.H /r.sub.V) (4) wherein X 0 is a thickness of the layer to be deposited, r H is a deposition rate of the layer in a horizontal direction and r V is a deposition rate of the layer in a vertical direction.

Claim 60

Dependent Claim 94 words

The method according to claim 50, wherein, when the portion of the layer having a projected shape and being to be deposited on the pattern to be formed in the substrate has an inclined side wall having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (5), I=(h.sub.0 -2X.sub.0) cot θ/2 (5) wherein h 0 is a thickness of the pattern to be formed in the substrate and X 0 is a thickness of the layer to be deposited.

Claim 61

Dependent Claim 188 words

The method according to claim 50, wherein, when the layer has a lower layer and an upper layer and a portion of the lower layer having a projected shape and being to be deposited on the pattern to be formed in the substrate has an inclined side wall having an inclination angle of θ from a horizontal direction and a portion of the upper layer to be deposited on the inclined side wall of the lower layer has an inclined surface having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (6), I=(h.sub.0 -2Y.sub.1) cot θ/2+Y.sub.2 (r.sub.2H /r.sub.2V -cos θ)/sin θ (6) wherein h 0 is a thickness of the pattern to be formed in the substrate, Y 1 is a thickness of the lower layer to be deposited, Y 2 is a thickness of the upper layer to be deposited, r 2H is a deposition rate of the upper layer in a horizontal direction and r 2V is a deposition rate of said portion of the upper layer in a normal direction.

Claim 62

Independent Claim 179 words

A method of manufacturing an integrated circuit by forming a pattern in a starting substrate, then bonding the front surface of the starting substrate to a supporting substrate and flattening the starting substrate from the back surface of the starting substrate by a chemical/mechanical polishing process, wherein a mask pattern to be formed in a mask is designed by the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) providing a dummy pattern to each of the meshes(i,j) which have been found in the step (B) to have the average pattern area ratios β(i,j) smaller than a predetermined value, and the pattern is formed in the starting substrate on the basis of lithography to which said mask is applied.

Claim 63

Independent Claim 179 words

A method of manufacturing an integrated circuit by forming a pattern in a starting substrate, then bonding the front surface of the starting substrate to a supporting substrate and flattening the starting substrate from the back surface of the starting substrate by a chemical/mechanical polishing process, wherein a mask pattern to be formed in a mask is designed by the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) providing a dummy pattern to each of the meshes(i,j) which have been found in the step (B) to have the average pattern area ratios β(i,j) smaller than a predetermined value, and the pattern is formed in the starting substrate on the basis of lithography to which said mask is applied.

Claim 64

Dependent Claim 35 words

The method according to claim 54, wherein the average pattern area ratio β(i,j) is determined on the basis of the following equations (1-1) and (1-2), ##EQU18## wherein q=0, 1, 2, . . . , Q.

Claim 65

Independent Claim 165 words

A method of manufacturing an integrated circuit by forming a pattern in a first layer deposited on a substrate, then depositing a second layer on the substrate including the patterned first layer and flattening the second layer by a chemical/mechanical polishing process, wherein a mask pattern to be formed in a mask is designed by the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) rearranging the pattern in the mask pattern so as to decrease the fluctuation of the average pattern area ratios β(i,j), and the pattern is formed in the first layer on the basis of lithography to which said mask is applied.

Claim 66

Independent Claim 165 words

A method of manufacturing an integrated circuit by forming a pattern in a first layer deposited on a substrate, then depositing a second layer on the substrate including the patterned first layer and flattening the second layer by a chemical/mechanical polishing process, wherein a mask pattern to be formed in a mask is designed by the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) rearranging the pattern in the mask pattern so as to decrease the fluctuation of the average pattern area ratios β(i,j), and the pattern is formed in the first layer on the basis of lithography to which said mask is applied.

Claim 67

Dependent Claim 35 words

The method according to claim 56, wherein the average pattern area ratio β(i,j) is determined on the basis of the following equations (1-1) and (1-2), ##EQU19## wherein q=0, 1, 2, . . . , Q.

Claim 68

Dependent Claim 42 words

The method according to claim 56, wherein the pattern in the mask pattern belongs to any of a plurality of circuit block, and the rearrangement of the pattern in the step (C) includes an increase of the size of the circuit block.

Claim 69

Dependent Claim 91 words

The method according to claim 56, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase ratio I determined by the thickness of the second layer to be deposited on the substrate including the patterned first layer or on the basis of a pattern area increase ratio I determined by the thickness of the pattern to be formed in the first layer and the thickness of the second layer to be deposited on the substrate including the patterned first layer.

Claim 70

Dependent Claim 132 words

The method according to claim 59, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase amount ΔS, ΔS being a pattern area increase amount determined by the thickness of the second layer to be deposited on the substrate including the patterned first layer or a pattern area increase amount determined by the thickness of the pattern to be formed in the first layer and the thickness of the second layer to be deposited on the substrate including the patterned first layer, ΔS being determined by multiplying I by L, L being a circumferential length of a portion of the second layer having a projected shape and being to be deposited on the pattern to be formed in the first layer.

Claim 71

Dependent Claim 100 words

The method according to claim 60, wherein, when the portion of the second layer having a projected shape and being to be deposited on the pattern to be formed in the first layer has a vertical side wall, the pattern area increase ratio I is determined on the basis of the following equation (4), I=X.sub.0 ×(r.sub.H /r.sub.V) (4) wherein X 0 is a thickness of the second layer to be deposited, r H is a deposition rate of the second layer in a horizontal direction and r V is a deposition rate of the second layer in a vertical direction.

Claim 72

Dependent Claim 98 words

The method according to claim 60, wherein, when the portion of the second layer having a projected shape and being to be deposited on the pattern to be formed in the first layer has an inclined side wall having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (5), I=(h.sub.0 -2X.sub.0) cot θ/2 (5) wherein h 0 is a thickness of the pattern to be formed in the first layer and X 0 is a thickness of the second layer to be deposited.

Claim 73

Dependent Claim 191 words

The method according to claim 60, wherein, when the second layer has a lower layer and an upper layer and a portion of the lower layer having a projected shape and being to be deposited on the pattern to be formed in the first layer has an inclined side wall having an inclination angle of θ from a horizontal direction and a portion of the upper layer to be deposited on the inclined side wall of the lower layer has an inclined surface having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (6), I=(h.sub.0 -2Y.sub.1) cot θ/2+Y.sub.2 (r.sub.2H /r.sub.2V -cos θ)/sin θ (6) wherein h 0 is a thickness of the pattern to be formed in the first layer, Y 1 is a thickness of the lower layer to be deposited, Y 2 is a thickness of the upper layer to be deposited, r 2H is a deposition rate of the upper layer in a horizontal direction and r 2V is a deposition rate of said portion of the upper layer in a normal direction.

Claim 74

Independent Claim 152 words

A method of manufacturing an integrated circuit by forming a pattern in a substrate, then depositing a layer on the substrate and flattening the layer by a chemical/mechanical polishing process, wherein a mask pattern to be formed in a mask is designed by the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) rearranging the pattern in the mask pattern so as to decrease the fluctuation of the average pattern area ratios β(i,j), and the pattern is formed in the substrate on the basis of lithography to which said mask is applied.

Claim 75

Independent Claim 152 words

A method of manufacturing an integrated circuit by forming a pattern in a substrate, then depositing a layer on the substrate and flattening the layer by a chemical/mechanical polishing process, wherein a mask pattern to be formed in a mask is designed by the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) rearranging the pattern in the mask pattern so as to decrease the fluctuation of the average pattern area ratios β(i,j), and the pattern is formed in the substrate on the basis of lithography to which said mask is applied.

Claim 76

Dependent Claim 35 words

The method according to claim 64, wherein the average pattern area ratio β(i,j) is determined on the basis of the following equations (1-1) and (1-2), ##EQU20## wherein q=0, 1, 2, . . . , Q.

Claim 77

Dependent Claim 42 words

The method according to claim 64, wherein the pattern in the mask pattern belongs to any of a plurality of circuit block, and the rearrangement of the pattern in the step (C) includes an increase of the size of the circuit block.

Claim 78

Dependent Claim 78 words

The method according to claim 64, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase ratio I determined by the thickness of the layer to be deposited on the substrate or on the basis of a pattern area increase ratio I determined by the thickness of the pattern to be formed in the substrate and the thickness of the layer to be deposited on the substrate.

Claim 79

Dependent Claim 117 words

The method according to claim 67, wherein the pattern area ratio α 0 (i,j) of each mesh(i,j) is compensated on the basis of a pattern area increase amount ΔS, ΔS being a pattern area increase amount determined by the thickness of the layer to be deposited on the substrate or a pattern area increase amount determined by the thickness of the pattern to be formed in the substrate and the thickness of the layer to be deposited on the substrate, ΔS being determined by multiplying I by L, L being a circumferential length of a portion of the layer having a projected shape and being to be deposited on the pattern to be formed in the substrate.

Claim 80

Dependent Claim 95 words

The method according to claim 68, wherein, when the portion of the layer having a projected shape and being to be deposited on the pattern to be formed in the substrate has a vertical side wall, the pattern area increase ratio I is determined on the basis of the following equation (4), I=X.sub.0 ×(r.sub.H /r.sub.V) (4) wherein X 0 is a thickness of the layer to be deposited, r H is a deposition rate of the layer in a horizontal direction and r V is a deposition rate of the layer in a vertical direction.

Claim 81

Dependent Claim 94 words

The method according to claim 68, wherein, when the portion of the layer having a projected shape and being to be deposited on the pattern to be formed in the substrate has an inclined side wall having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (5), I=(h.sub.0 -2X.sub.0) cot θ/2 (5) wherein h 0 is a thickness of the pattern to be formed in the substrate, and X 0 is a thickness of the layer to be deposited.

Claim 82

Dependent Claim 188 words

The method according to claim 68, wherein, when the layer has a lower layer and an upper layer and a portion of the lower layer having a projected shape and being to be deposited on the pattern to be formed in the substrate has an inclined side wall having an inclination angle of θ from a horizontal direction and a portion of the upper layer to be deposited on the inclined side wall of the lower layer has an inclined surface having an inclination angle of θ from a horizontal direction, the pattern area increase ratio I is determined on the basis of the following equation (6), I=(h.sub.0 -2Y.sub.1) cot θ/2+Y.sub.2 (r.sub.2H /r.sub.2V -cos θ)/sin θ (6) wherein h 0 is a thickness of the pattern to be formed in the substrate, Y 1 is a thickness of the lower layer to be deposited, Y 2 is a thickness of the upper layer to be deposited, r 2H is a deposition rate of the upper layer in a horizontal direction and r 2V is a deposition rate of said portion of the upper layer in a normal direction.

Claim 83

Independent Claim 169 words

A method of manufacturing an integrated circuit by forming a pattern in a starting substrate, then bonding the front surface of the starting substrate to a supporting substrate and flattening the starting substrate from the back surface of the starting substrate by a chemical/mechanical polishing process, wherein a mask pattern to be formed in a mask is designed by the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) rearranging the pattern in the mask pattern so as to decrease the fluctuation of the average pattern area ratios β(i,j), and the pattern is formed in the starting substrate on the basis of lithography to which said mask is applied.

Claim 84

Independent Claim 169 words

A method of manufacturing an integrated circuit by forming a pattern in a starting substrate, then bonding the front surface of the starting substrate to a supporting substrate and flattening the starting substrate from the back surface of the starting substrate by a chemical/mechanical polishing process, wherein a mask pattern to be formed in a mask is designed by the steps of (A) dividing the mask pattern into meshes having the form of a lattice and having a predetermined size, and determining pattern area ratios α 0 (i,j) of the meshes(i,j), respectively, (B) determining an average pattern area ratio β(i,j) within a predetermined region including a mesh(i,j) as the central point in the predetermined region with regard to each of all the meshes in the mask pattern, and (C) rearranging the pattern in the mask pattern so as to decrease the fluctuation of the average pattern area ratios β(i,j), and the pattern is formed in the starting substrate on the basis of lithography to which said mask is applied.

Claim 85

Dependent Claim 35 words

The method according to claim 72, wherein the average pattern area ratio β(i,j) is determined on the basis of the following equations (1-1) and (1-2), ##EQU21## wherein q=0, 1, 2, . . . , Q.

Claim 86

Dependent Claim 42 words

The method according to claim 72, wherein the pattern in the mask pattern belongs to any of a plurality of circuit block, and the rearrangement of the pattern in the step (C) includes an increase of the size of the circuit block.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2002-09-06	2003-03-08	2003-09-07	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2006-09-06	2007-03-08	2007-09-07	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2010-09-06	2011-03-08	2011-09-07	$7700.00	Window Closed / Lapsed

Method of designing mask pattern to be formed in mask and method of manufacturing integrated circuit

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