US6152071A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High-frequency introducing means, plasma treatment apparatus, and plasma treatment method
Assignee: Canon Inc
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Filing: 1997-12-10
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Granted: 2000-11-28
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Expires: 2017-12-10
Abstract
Abstract A high frequency introducing means is provided which comprises a high frequency electrode having a shape of a bar or plate for generating plasma by high frequency power, and an adjustment mechanism for adjusting an absolute value of reactance between an end of the electrode opposite to a high frequency power introducing point of the electrode and a grounded portion. A plasma treatment apparatus and a plasma treatment method are also provided employing the above high frequency introducing means. A deposition film of high quality is formed stably and efficiently in an extremely uniform thickness and an extremely uniform quality at a high speed on a base member of a large area by adjusting the absolute value of the reactance.
Inventors
- 👤 Kazuyoshi Akiyama
- 👤 Atsushi Yamagami
- 👤 Satoshi Takaki
- 👤 Koji Teranishi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:27
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32174; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/50; C23C16/505; C23C16/509
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
69 words
A high frequency power introducing means comprising a high frequency electrode having a bar or plate shape for generating plasma by high frequency power, and an adjustment mechanism for adjusting a value of reactance between an end of the electrode opposite to a power introducing point of the electrode and a grounded portion, wherein the adjustment mechanism is provided between the end of the electrode and the grounded portion.
Claim 2
Dependent Claim
69 words
A high frequency power introducing means comprising a high frequency electrode having a bar or plate shape for generating plasma by high frequency power, and an adjustment mechanism for adjusting a value of reactance between an end of the electrode opposite to a power introducing point of the electrode and a grounded portion, wherein the adjustment mechanism is provided between the end of the electrode and the grounded portion.
Claim 3
Dependent Claim
29 words
The high frequency power introducing means according to claim 1, wherein the absolute value of the reactance is 50Ω or less at a frequency of the high frequency power.
Claim 4
Dependent Claim
35 words
The high frequency power introducing means according to claim 1, wherein the mechanism comprises means for adjusting the reactance by selecting the length of a line to the ground and/or a capacitance of a condenser.
Claim 5
Dependent Claim
22 words
The high frequency power introducing means according to claim 1, wherein the surface of the electrode is covered with a dielectric material.
Claim 6
Dependent Claim
32 words
The high frequency power introducing means according to claim 1, wherein a power source is further provided for supplying the high frequency power of a frequency ranging from 20 to 600 MHz.
Claim 7
Dependent Claim
32 words
The high frequency power introducing means according to claim 1, wherein a power source is further provided for supplying the high frequency power of a frequency ranging from 60 to 300 MHz.
Claim 8
Dependent Claim
152 words
A plasma treatment apparatus comprising a vacuum tight reaction chamber, a gas feeding means for feeding a gas to the reaction chamber, a high frequency electrode and a high frequency power source for supplying high frequency power to the reaction chamber, a base member holding means provided in the reaction chamber, and an evacuating means for evacuating a gas within the reaction chamber after reaction, in which a high frequency power generated at the high frequency power source is supplied to the high frequency electrode to generate plasma between the base member held by the base member holding means and the high frequency electrode, wherein an adjustment mechanism is provided for adjusting a value of reactance between an end portion of the electrode opposite to a power introducing point of the electrode and a grounded portion, wherein the adjustment mechanism is provided between the end of the electrode and the grounded portion.
Claim 9
Dependent Claim
152 words
A plasma treatment apparatus comprising a vacuum tight reaction chamber, a gas feeding means for feeding a gas to the reaction chamber, a high frequency electrode and a high frequency power source for supplying high frequency power to the reaction chamber, a base member holding means provided in the reaction chamber, and an evacuating means for evacuating a gas within the reaction chamber after reaction, in which a high frequency power generated at the high frequency power source is supplied to the high frequency electrode to generate plasma between the base member held by the base member holding means and the high frequency electrode, wherein an adjustment mechanism is provided for adjusting a value of reactance between an end portion of the electrode opposite to a power introducing point of the electrode and a grounded portion, wherein the adjustment mechanism is provided between the end of the electrode and the grounded portion.
Claim 10
Dependent Claim
27 words
The plasma treatment apparatus according to claim 7, wherein the absolute value of the reactance is 50Ω or less at a frequency of the high frequency power.
Claim 11
Dependent Claim
33 words
The plasma treatment apparatus according to claim 7, wherein the mechanism comprises means for adjusting the reactance by selecting the length of a line to the ground and/or a capacitance of a condenser.
Claim 12
Dependent Claim
20 words
The plasma treatment apparatus according to claim 7, wherein the surface of the electrode is covered by a dielectric material.
Claim 13
Dependent Claim
25 words
The plasma treatment apparatus according to claim 7, wherein the power source supplies high frequency power of a frequency ranging from 20 to 600 MHz.
Claim 14
Dependent Claim
25 words
The plasma treatment apparatus according to claim 7, wherein the power source supplies high frequency power of a frequency ranging from 60 to 300 MHz.
Claim 15
Dependent Claim
31 words
The plasma treatment apparatus according to claim 7, wherein the base member holding means are arranged such that cylindrical base members form a circle line concentric to the high frequency electrode.
Claim 16
Dependent Claim
17 words
The plasma treatment apparatus according to claim 7, wherein the high frequency electrode is provided in plural.
Claim 17
Dependent Claim
42 words
The plasma treatment apparatus according to claim 7, wherein the high frequency electrode is arranged in plural such that one of the electrodes is positioned at a center and other electrodes are positioned on a circular line concentric to the one electrode.
Claim 18
Dependent Claim
58 words
The plasma treatment apparatus according to claim 7, wherein the high frequency electrode is arranged in plural such that one of the electrodes is positioned at a center and other electrodes are positioned on a circular line concentric to the one electrode, and the base member holding means are arranged on the same or another concentric circular line.
Claim 19
Dependent Claim
21 words
The plasma treatment apparatus according to claim 7, wherein the base member-holding means comprises means for delivering a sheet-shaped base member.
Claim 20
Dependent Claim
92 words
A plasma treatment apparatus comprising a vacuum-tight reaction chamber, and at least a gas-introducing means for introducing a gas into the reaction chamber, and a high frequency power introducing means provided parallel to a generatrix line of a cylindrical base member in the reaction chamber, in which plasma is generated by causing glow discharge between the high frequency power introducing means and the base member, wherein the high frequency power introducing means comprises means for adjusting capacitance between an end portion of the high frequency power introducing means and a grounded portion.
Claim 21
Dependent Claim
92 words
A plasma treatment apparatus comprising a vacuum-tight reaction chamber, and at least a gas-introducing means for introducing a gas into the reaction chamber, and a high frequency power introducing means provided parallel to a generatrix line of a cylindrical base member in the reaction chamber, in which plasma is generated by causing glow discharge between the high frequency power introducing means and the base member, wherein the high frequency power introducing means comprises means for adjusting capacitance between an end portion of the high frequency power introducing means and a grounded portion.
Claim 22
Dependent Claim
53 words
The plasma treatment apparatus according to claim 18, wherein the means for adjusting the capacitance has a constitution that one end of the high frequency power introducing means is connected to a matching device, and the other end of the high frequency power introducing means is grounded through a mechanism for varying capacitance.
Claim 23
Dependent Claim
35 words
The plasma treatment apparatus according to claim 18, wherein the means for adjusting the capacitance has a constitution that the both ends of the high frequency power introducing means are connected to one matching device.
Claim 24
Dependent Claim
37 words
The plasma treatment apparatus according to claim 18, wherein the cylindrical base member is arranged in plural along a circle line and the high frequency power introducing means is placed at the center of the circle line.
Claim 25
Dependent Claim
19 words
The plasma treatment apparatus according to claim 18, wherein the high frequency power introducing means is arranged in plural.
Claim 26
Dependent Claim
30 words
The plasma treatment apparatus according to claim 18, wherein the high frequency power introducing means is covered with a dielectric material at least at a side confronting to the plasma.
Claim 27
Dependent Claim
27 words
The plasma treatment apparatus according to claim 18, wherein the high frequency power introducing means comprises a cooling mechanism for cooling the high frequency power introducing means.
Claim 28
Dependent Claim
25 words
The plasma treatment apparatus according to claim 18, wherein the high frequency power introducing means constitutes at least a portion of the gas introducing means.
Claim 29
Dependent Claim
24 words
The plasma treatment apparatus according to claim 25, wherein the high frequency power introducing means comprises a gas releasing hole for releasing the gas.
Claim 30
Dependent Claim
25 words
The plasma treatment apparatus according to claim 26, wherein the gas releasing hole communicates with a hollow portion of the high frequency power introducing means.
Claim 31
Dependent Claim
34 words
The plasma treatment apparatus according to claim 26, wherein the gas releasing hole communicates with a space between the electrode of the high frequency power introducing means and a dielectric material covering the electrode.
Claim 32
Dependent Claim
86 words
A plasma treatment method comprising the steps of introducing a gas into a vacuum-tight reaction vessel, and generating plasma by high frequency power between a base member held by a base member holder and a high frequency electrode placed in the reaction chamber, wherein the plasma is maintained in such a state that a value of reactance between an end of the electrode opposite to a power introducing point of the high frequency electrode and a grounded portion is kept at a predetermined value or less.
Claim 33
Dependent Claim
86 words
A plasma treatment method comprising the steps of introducing a gas into a vacuum-tight reaction vessel, and generating plasma by high frequency power between a base member held by a base member holder and a high frequency electrode placed in the reaction chamber, wherein the plasma is maintained in such a state that a value of reactance between an end of the electrode opposite to a power introducing point of the high frequency electrode and a grounded portion is kept at a predetermined value or less.
Claim 34
Dependent Claim
27 words
The plasma treatment method according to claim 29, wherein the absolute value of the reactance is 50Ω or less at a frequency of the high frequency power.
Claim 35
Dependent Claim
29 words
The plasma treatment method according to claim 29, wherein the reactance is adjusted by selecting the length of a line to the ground and/or a capacitance of a condenser.
Claim 36
Dependent Claim
23 words
The plasma treatment method according to claim 29, wherein a deposition film is formed on the base member by utilizing generation of plasma.
Claim 37
Dependent Claim
83 words
The plasma treatment method according to claim 29, wherein the base member is cylindrical, wherein a plurality of cylindrical base members are arranged such that axes thereof are substantially positioned along a circle line with the high frequency electrode placed at the center of the circle line in the reaction chamber, and wherein plasma is generated between the high frequency electrode and the cylindrical base members and a deposition film is formed on surfaces of the cylindrical base members while rotating the members.
Claim 38
Dependent Claim
55 words
The plasma treatment method according to claim 29, wherein the base member is cylindrical, wherein the high frequency electrodes is provided in plural around the cylindrical base member, and wherein a deposition film is formed on surfaces of the cylindrical base members by generating plasma between the high frequency electrodes and the cylindrical base member.
Claim 39
Dependent Claim
26 words
The plasma treatment method according to claim 34, wherein the deposition film is formed on the surfaces of the cylindrical base member while rotating the member.
Claim 40
Dependent Claim
56 words
The plasma treatment method according to claim 29, wherein the base member is a plate base member, one or more high frequency electrodes are arranged parallel to the plate base member, and the deposition film is formed on a surface of the base member by generating plasma between the high frequency electrode and the base member.
Claim 41
Dependent Claim
72 words
The plasma treatment method according to claim 29, wherein the base member is a sheet base member capable of delivering from a holding roll and wound by a wind-up roll during film formation, one or more high frequency electrodes are arranged parallel to the sheet base member, and the deposition film is formed on the surface of the base member by generating plasma between the high frequency electrode and the base member.
Claim 42
Dependent Claim
69 words
A plasma treating method comprising introducing high frequency power into a vacuum-tight reaction chamber through a high frequency power introducing means placed parallel to a generatrix line of a cylindrical electroconductive base member, and causing glow discharge between the high frequency power introducing means and the base member to generate plasma in the reaction chamber wherein capacitance at an end of the high frequency power introducing means is varied.
Claim 43
Dependent Claim
69 words
A plasma treating method comprising introducing high frequency power into a vacuum-tight reaction chamber through a high frequency power introducing means placed parallel to a generatrix line of a cylindrical electroconductive base member, and causing glow discharge between the high frequency power introducing means and the base member to generate plasma in the reaction chamber wherein capacitance at an end of the high frequency power introducing means is varied.
Claim 44
Dependent Claim
23 words
The plasma treatment method according to claim 38, wherein a frequency of the high frequency power ranges from 20 MHz to 600 MHz.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-28 | 2004-05-29 | 2004-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-28 | 2008-05-29 | 2008-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-28 | 2012-05-29 | 2012-11-28 | $7700.00 | Window Closed / Lapsed |