US6159620A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Single-electron solid state electronic device
Assignee: California Institute of Technology
•
Filing: 1998-03-31
•
Granted: 2000-12-12
•
Expires: 2018-03-31
Abstract
Abstract A single-electron solid state electronic device is characterized by organically functionalized nanometer size metal and metal alloy nanocrystal active elements. The electronic behavior of the device is distinguished by single electron charging phenomena, displaying characteristic Coulomb Blockade and Coulomb Staircase signatures.
Inventors
- 👤 James R. Heath
- 👤 Daniel V. Leff
- 👤 Gil Markovich
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:31
CPC Classifications
C; C30; C30B; C30B7/00; B; B82; B82Y; B82Y10/00; B82Y30/00; C30B29/00; C30B29/60; C30B29/605; C30B7/005; H; H10; H10D; H10D30/00; H10D30/40; H10D30/402; G; G11; G11C; G11C2216/00; G11C2216/02; G11C2216/08; H10K; H10K10/00; H10K10/701; Y; Y10; Y10S; Y10S977/00; Y10S977/902; Y10S977/932; Y10S977/936; Y10S977/937; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12535; Y10T428/12556; Y10T428/12569
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
75 words
A solid state electronic device comprising: a substrate; a first conductive thin film layer deposited on said substrate; a thin film nanocrystal layer of organically functionalized metal or metal alloy nanocrystals deposited on and in contact with said first conductive thin layer; a dielectric spacer layer in contact with said thin film nanocrystal layer; and a second conductive thin film layer deposited on and in contact with said dielectric spacer layer devices exhibiting single-electron behavior.
Claim 2
Dependent Claim
75 words
A solid state electronic device comprising: a substrate; a first conductive thin film layer deposited on said substrate; a thin film nanocrystal layer of organically functionalized metal or metal alloy nanocrystals deposited on and in contact with said first conductive thin layer; a dielectric spacer layer in contact with said thin film nanocrystal layer; and a second conductive thin film layer deposited on and in contact with said dielectric spacer layer devices exhibiting single-electron behavior.
Claim 3
Dependent Claim
31 words
The device of claim 1 wherein said substrate comprises a member selected from the group consisting of Si, SiO 2 , alumina, mica, GaAs, indium tin oxide, glasses, and polymer films.
Claim 4
Dependent Claim
26 words
The device of claim 1 wherein said first conductive thin film layer comprises a member selected from the group consisting of aluminum, copper, gold, and silver.
Claim 5
Dependent Claim
17 words
The device of claim 1 wherein said thin film nanocrystal layer is comprised of a Langmuir-Schaeffer film.
Claim 6
Dependent Claim
18 words
The device of claim 1 wherein said thin film nanocrystal layer is comprised of a self-assembled thin film.
Claim 7
Dependent Claim
23 words
The device of claim 1 wherein said this film nanocrystal layer comprises nanocrystals having an average cross-section no larger than about 20 nm.
Claim 8
Dependent Claim
25 words
The device of claim 1 wherein said thin film nanocrystal layer comprises nanocrystals having an average cross-section ranging from about 1 nm to 10 nm.
Claim 9
Dependent Claim
32 words
The device of claim 1 wherein said metal nanocrystals comprise a member selected from the group consisting of alkali metals, alkaline earth metals, Group IIIa metals, transition metals, and Group IVa metals.
Claim 10
Dependent Claim
32 words
The device of claim 1 wherein said metal nanocrystals comprise a member selected from the group consisting of Au, Ag, Co, Sn, Fe, Cu, Ni, Pt, Rh, and Pd, and combinations thereof.
Claim 11
Dependent Claim
38 words
The device of claim 1 wherein said metal alloy nanocrystals comprise a combination of two or more metals selected from the group consisting of alkali metals, alkaline earth metals, Group IIIa metals, transition metals, and Group IVa metals.
Claim 12
Dependent Claim
35 words
The device of claim 1 wherein said metal alloy nanocrystals comprise a combination of two or more metals selected from the group consisting of Au, Ag, Co, Sn, Fe, Cu, Ni, Pt, Rh, and Pd.
Claim 13
Dependent Claim
16 words
The device of claim 1 wherein said thin film nanocrystal layer comprises a nanocrystal matrix composite.
Claim 14
Dependent Claim
25 words
The device of claim 12 wherein the matrix is a member selected from the group consisting of polymers, glasses, silica, alumina, sol-gels, and glassy carbon.
Claim 15
Dependent Claim
12 words
The device of claim 12 wherein the matrix comprises a polymer solution.
Claim 16
Dependent Claim
26 words
The device of claim 14 wherein the polymer is a member selected from the group consisting of polystyrene, polymethylmethacrylate, polyethers, polypropylene, polyethylene, PPV, and conductive polymers.
Claim 17
Dependent Claim
28 words
The electronic device of claim 13 wherein said polymer solution comprises a solvent selected from the group consisting of alcohols, ketones, ethers, alkanes, alkenes, chloroform, TCE, and dichloromethane.
Claim 18
Dependent Claim
20 words
The device of claim 1 wherein said dielectric spacer layer has a dielectric constant less than or equal to 10.
Claim 19
Dependent Claim
27 words
The device of claim 1 wherein said dielectric spacer layer comprises polymer thin films selected from the group consisting of polystyrene, polymethylmethacrylate, polyethers, polypropylene, polyethylene, and PPV.
Claim 20
Dependent Claim
26 words
The device of claim 1 wherein said second conductive thin film layer comprises a member selected from the group consisting of Al, Cu, Au, and Ag.
Claim 21
Dependent Claim
20 words
The device of claim 1 wherein the operating range is within the temperature range of 4° K to 330° K.
Claim 22
Dependent Claim
11 words
The device of claim 1 which functions as a charging device.
Claim 23
Dependent Claim
11 words
The device of claim 1 which functions as a memory device.
Claim 24
Dependent Claim
79 words
A solid state nanocrystal memory device exhibiting single-electron behavior manifested by Coulomb Blockade or Coulomb Staircase comprising: a source and drain region separated by a semiconductor channel; a first insulating layer deposited over said semiconductor channel; a thin film nanocrystal layer applied to said first insulating layer, said thin film nanocrystal layer comprising organically functionalized metal or metal alloy nanocrystals; a second insulating layer deposited over said nanocrystal layer; and a gate electrode applied to said second insulating layer.
Claim 25
Dependent Claim
79 words
A solid state nanocrystal memory device exhibiting single-electron behavior manifested by Coulomb Blockade or Coulomb Staircase comprising: a source and drain region separated by a semiconductor channel; a first insulating layer deposited over said semiconductor channel; a thin film nanocrystal layer applied to said first insulating layer, said thin film nanocrystal layer comprising organically functionalized metal or metal alloy nanocrystals; a second insulating layer deposited over said nanocrystal layer; and a gate electrode applied to said second insulating layer.
References Cited (Backward Citations)
US3894332A
Cited
US3885196A
Cited
US4025910A
Cited
US4746587A
Cited
US5345104A
Cited
US5270221A
Cited
US5633493A
Cited
US5830538A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-12 | 2004-06-12 | 2004-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-12 | 2008-06-12 | 2008-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-12 | 2012-06-12 | 2012-12-12 | $7700.00 | Window Closed / Lapsed |