Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
96 words
A method of forming an air gap within a semiconductor structure comprising the steps of: using a sacrificial material to occupy a closed interior volume in a semiconductor structure; causing the sacrificial material to decompose into one or more gaseous decomposition products; and removing at least one of the one or more gaseous decomposition products by passage through at least one solid layer contiguous to the interior volume; and wherein the decomposition of the sacrificial material leaves an air gap at the closed interior volume previously occupied thereby, and the sacrificial material comprises a norbornene-type polymer.
Claim 2
Independent Claim
96 words
A method of forming an air gap within a semiconductor structure comprising the steps of: using a sacrificial material to occupy a closed interior volume in a semiconductor structure; causing the sacrificial material to decompose into one or more gaseous decomposition products; and removing at least one of the one or more gaseous decomposition products by passage through at least one solid layer contiguous to the interior volume; and wherein the decomposition of the sacrificial material leaves an air gap at the closed interior volume previously occupied thereby, and the sacrificial material comprises a norbornene-type polymer.
Claim 3
Dependent Claim
45 words
A method as set forth in claim 1, wherein the at least one solid layer is a dielectric material through which the at least one of the one or more gaseous decomposition products can pass by diffusion under conditions not detrimental to the semiconductor structure.
Claim 4
Dependent Claim
51 words
A method as set forth in claim 1, wherein the at least one solid layer is a porous dielectric material through which the at least one of the one or more gaseous decomposition products can pass through pores in the porous dielectric material under conditions not detrimental to the semiconductor structure.
Claim 5
Dependent Claim
176 words
A method as set forth in claim 1, wherein said norbornene-type polymer comprises repeat units of the general formula: ##STR16## wherein R 1 and R 4 independently represent hydrogen or linear or branched (C 1 to C 20 ) alkyl; R 2 and R 3 independently represent hydrogen, linear or branched (C 1 to C 20 ) alkyl or the groups: ##STR17## R 9 independently is hydrogen, methyl, or ethyl; R 10 , R 11 , and R 12 independently represent linear or branched (C 1 to C 20 ) alkyl, linear or branched (C 1 to C 20 ) alkoxy, linear or branched (C 1 to C 20 ) alkyl carbonyloxy, linear or branched (C 1 to C 20 ) alkyl peroxy, and substituted or unsubstituted (C 6 to C 20 ) aryloxy; m is a number from 0 to 4; and n is a number from 0 to 5; and at least one of substituents R 2 and R 3 is selected from the silyl group represented by the formula set forth under Ia.
Claim 6
Dependent Claim
42 words
A method as set forth in claim 4, wherein at least one of R 10 , R 11 , or R 12 is selected from a linear or branched (C 1 to C 10 ) alkoxy group and R 9 is hydrogen.
Claim 7
Dependent Claim
33 words
A method as set forth in claim 5, wherein each of R 10 , R 11 , and R 12 are the same and are selected from methoxy, ethoxy, propoxy, butoxy, and pentoxy.
Claim 8
Dependent Claim
26 words
A method as set forth in claim 6, wherein n is 0 and R 10 , R 11 , and R 12 are each ethoxy groups.
Claim 9
Dependent Claim
18 words
A method as set forth in claim 7, wherein R 2 or R 3 is a triethoxysilyl substituent.
Claim 10
Dependent Claim
55 words
A method as set forth in claim 1, wherein in Formula I above, m is preferably 0 or 1 as represented by structures Ib and Ic, respectively: ##STR18## wherein R 1 to R 4 are as previously defined and at least one of R 2 and R 3 is a silyl substituent represented by Ia.
Claim 11
Dependent Claim
60 words
A method as set forth in claim 1, wherein R 1 and R 4 taken together with the two ring carbon atoms to which they are attached comprise a repeat unit of the following structure: ##STR19## wherein B is a methylene group, q is a number from 2 to 6, and R 2 and R 3 are as defined above.
Claim 12
Dependent Claim
184 words
A method as set forth in claim 1, wherein said norbornene-type polymer further comprises hydrocarbyl substituted polycyclic repeating units selected from units represented by Formula II below: ##STR20## wherein R 5 , R 6 , R 7 , and R 8 independently represent hydrogen, linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl, or vinyl; any of R 5 and R 6 or R 7 and R 8 can be taken together to form a (C 1 to C 10 ) alkylidenyl group, R 5 and R 8 when taken with the two ring carbon atoms to which they are attached can represent saturated and unsaturated cyclic groups containing 4 to 12 carbon atoms or an aromatic ring containing 6 to 17 carbon atoms; and p is 0, 1, 2, 3, or 4.
Claim 13
Dependent Claim
183 words
A method as set forth in claim 1, wherein said norbornene-type polymer comprises hydrocarbyl substituted polycyclic repeating units selected from units represented by Formula II below: ##STR21## wherein R 5 , R 6 , R 7 , and R 8 independently represent hydrogen, linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl, or vinyl; any of R 5 and R 6 or R 7 and R 8 can be taken together to form a (C 1 to C 10 ) alkylidenyl group, R 5 and R 8 when taken with the two ring carbon atoms to which they are attached can represent saturated and unsaturated cyclic groups containing 4 to 12 carbon atoms or an aromatic ring containing 6 to 17 carbon atoms; and p is 0, 1, 2, 3, or 4.
Claim 14
Dependent Claim
129 words
A method as set forth in claim 1, wherein said norbornene-type polymer comprises repeating units represented by Formula III below: ##STR22## wherein R 9 to R 12 independently represent a polar substituent selected from the group: --(A) n --C(O)OR", --(A) n --OR", --(A) n --OC(O)R", --(A) n --OC(O)OR", --(A) n --C(O)R", --(A) n --OC(O)C(O)OR", --(A) n --O--A'--C(O)OR", --(A) n --OC(O)--A'--C(O)OR", --(A) n --C(O)O--A'--C(O)OR", --(A) n --C(O)--A'--OR", --(A) n --C(O)O--A'--OC(O)OR", --(A) n --C(O)O--A'--O--A'--C(O)OR", --(A) n --C(O)O--A'--OC(O)C(O)OR", --(A) n --C(R") 2 CH(R")(C(O)OR"), and --(A) n --C(R") 2 CH(C(O)OR") 2 ; the moieties A and A' independently represent a divalent bridging or spacer radical selected from divalent hydrocarbon radicals, divalent cyclic hydrocarbon radicals, divalent oxygen containing radicals, and divalent cyclic ethers and cyclic diethers; and n is an integer 0 or 1.
Claim 15
Dependent Claim
463 words
A method as set forth in claim 1, wherein said norbornene-type polymer comprises copolymers comprising a combination of repeating units represented by Formulae I and II, Formulae I and III, Formulae II and III or Formulae I, II and III, where Formula I is: ##STR23## wherein R 1 and R 4 independently represent hydrogen or linear or branched (C 1 to C 20 ) alkyl; R 2 and R 3 independently represent hydrogen, linear or branched (C 1 to C 20 ) alkyl or the groups: ##STR24## R 9 independently is hydrogen, methyl, or ethyl; R 10 , R 11 , and R 12 independently represent linear or branched (C 1 to C 20 ) alkyl, linear or branched (C 1 to C 20 ) alkoxy, linear or branched (C 1 to C 20 ) alkyl carbonyloxy, and substituted or unsubstituted (C 6 to C 20 ) aryloxy; m is a number from 0 to 4; and n is a number from 0 to 5; and at least one of substituents R 2 and R 3 is selected from the silyl group represented by the formula set forth under Ia; Formula II is ##STR25## wherein R 5 , R 6 , R 7 , and R 8 independently represent hydrogen, linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl, or vinyl; any of R 5 and R 6 or R 7 and R 8 can be taken together to form a (C 1 to C 10 ) alkylidenyl group, R 5 and R 8 when taken with the two ring carbon atoms to which they are attached can represent saturated and unsaturated cyclic groups containing 4 to 12 carbon atoms or an aromatic ring containing 6 to 17 carbon atoms; and p is 0, 1, 2, 3, or 4; and Formula III is ##STR26## wherein R 9 to R 12 independently represent a polar substituent selected from the group: --(A) n --C(O)OR', --(A) n --OR", --(A) n --OC(O)R", --(A) n --OC(O)OR", --(A) n --C(O)R", --(A) n --OC(O)C(O)OR", --(A) n --O--A'--C(O)OR", --(A) n --OC(O)--A'--C(O)OR", --(A) n --C(O)O--A'--C(O)OR", --(A) n --C(O)--A'--OR", --(A) n --C(O)O--A'--OC(O)OR", --(A) n --C(O)O--A'--O--A'--C(O)OR", --(A) n --C(O)O--A'--OC(O)C(O)OR", --(A) n --C(R") 2 CH(R")(C(O)OR"), and --(A) n --C(R") 2 CH(C(O)OR") 2 ; the moieties A and A' independently represent a divalent bridging or spacer radical selected from divalent hydrocarbon radicals, divalent cyclic hydrocarbon radicals, divalent oxygen containing radicals, and divalent cyclic ethers and cyclic diethers; and n is an integer 0 or 1.
Claim 16
Dependent Claim
25 words
A method as set forth in claim 1, wherein the repeating units containing silyl functional groups comprise at least 1 mole percent of the polymer.
Claim 17
Dependent Claim
25 words
A method as set forth in claim 15, wherein the repeating units containing silyl functional groups comprise at least 5 mole percent of the polymer.
Claim 18
Dependent Claim
59 words
A method as set forth in claim 1, wherein the sacrificial material is provided in the semiconductor structure by: forming a patterned layer of the sacrificial material on a substrate corresponding to a pattern of one or more gaps to be formed in the semiconductor structure; and forming another layer of material overlying the patterned layer of sacrificial material.
Claim 19
Dependent Claim
82 words
A method as set forth in claim 1, wherein the sacrificial material is provided in the semiconductor structure by: forming a patterned layer of sacrificial material on a substrate corresponding to a pattern of one or more gaps to be formed in the semiconductor structure; depositing a second material on the substrate within regions bordered by the sacrificial material; forming another layer of material overlying the patterned layer of sacrificial material and second material in the regions bordered by the sacrificial material.
Claim 20
Dependent Claim
25 words
A method as set forth in claim 18, wherein the depositing step includes using a conductive material as the second material to form conductive leads.
Claim 21
Independent Claim
126 words
A method of forming one or more air gaps in a semiconductor structure comprising the steps of: forming a patterned layer of sacrificial material on a substrate corresponding to a pattern of one or more gaps to be formed in the semiconductor structure; depositing a second material on the substrate within regions bordered by the sacrificial material; forming an overcoat layer of material overlying the patterned layer of sacrificial material and second material in the regions bordered by the sacrificial material; causing the sacrificial material to decompose into one or more gaseous decomposition products; and removing at least one of the one or more gaseous decomposition products by passage through the overcoat layer so that one or more air gaps are formed within the semiconductor structure.
Claim 22
Independent Claim
126 words
A method of forming one or more air gaps in a semiconductor structure comprising the steps of: forming a patterned layer of sacrificial material on a substrate corresponding to a pattern of one or more gaps to be formed in the semiconductor structure; depositing a second material on the substrate within regions bordered by the sacrificial material; forming an overcoat layer of material overlying the patterned layer of sacrificial material and second material in the regions bordered by the sacrificial material; causing the sacrificial material to decompose into one or more gaseous decomposition products; and removing at least one of the one or more gaseous decomposition products by passage through the overcoat layer so that one or more air gaps are formed within the semiconductor structure.
Claim 23
Dependent Claim
33 words
A method as set forth in claim 20, wherein said depositing of the second material includes using a conductive material to form conductive leads on opposite sides of portions of the sacrificial material.
Claim 24
Dependent Claim
34 words
A method as set forth in claim 21, wherein prior to said forming of the overcoat layer, the conductive material is formed with a height less than the height of the adjacent sacrificial material.
Claim 25
Dependent Claim
16 words
A method as set forth in claim 20, wherein said sacrificial material is a cyclic olefin.
Claim 26
Dependent Claim
16 words
A method as set forth in claim 23, wherein said cyclic olefin is a dicyclic olefin.
Claim 27
Dependent Claim
16 words
A method as set forth in claim 20, wherein said sacrificial material is a norbornene-type polymer.
Claim 28
Dependent Claim
165 words
A method as set forth in claim 25, wherein said norbornene-type polymer comprises repeat units of the general formula: ##STR27## wherein R 1 and R 4 independently represent hydrogen or linear or branched (C 1 to C 20 ) alkyl; R 2 and R 3 independently represent hydrogen, linear or branched (C 1 to C 20 ) alkyl or the groups: ##STR28## R 9 independently is hydrogen, methyl, or ethyl; R 10 , R 11 , and R 12 independently represent linear or branched (C 1 to C 20 ) alkyl, linear or branched (C 1 to C 20 ) alkoxy, linear or branched (C 1 to C 20 ) alkyl carbonyloxy, and substituted or unsubstituted (C 6 to C 20 ) aryloxy; m is a number from 0 to 4; and n is a number from 0 to 5; and at least one of substituents R 2 and R 3 is selected from the silyl group represented by the formula set forth under Ia.
Claim 29
Dependent Claim
55 words
A method as set forth in claim 26, wherein in Formula I above, m is preferably 0 or 1 as represented by structures Ib and Ic, respectively: ##STR29## wherein R 1 to R 4 are as previously defined and at least one of R 2 and R 3 is a silyl substituent represented by Ia.
Claim 30
Dependent Claim
60 words
A method as set forth in claim 26, wherein R 1 and R 4 taken together with the two ring carbon atoms to which they are attached comprise a repeat unit of the following structure: ##STR30## wherein B is a methylene group, q is a number from 2 to 6, and R 2 and R 3 are as defined above.
Claim 31
Dependent Claim
184 words
A method as set forth in claim 26, wherein said norbornene-type polymer further comprises hydrocarbyl substituted polycyclic repeating units selected from units represented by Formula II below: ##STR31## wherein R 5 , R 6 , R 7 , and R 8 independently represent hydrogen, linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl, or vinyl; any of R 5 and R 6 or R 7 and R 8 can be taken together to form a (C 1 to C 10 ) alkylidenyl group, R 5 and R 8 when taken with the two ring carbon atoms to which they are attached can represent saturated and unsaturated cyclic groups containing 4 to 12 carbon atoms or an aromatic ring containing 6 to 17 carbon atoms; and p is 0, 1, 2, 3, or 4.
Claim 32
Independent Claim
92 words
A method of forming an air gap within a structure comprising the steps of: using a sacrificial material to occupy a closed interior volume in the structure; heating the sacrificial material to cause it to decompose into one or more gaseous decomposition products; and removing at least one of the one or more gaseous decomposition products by passage through at least one solid layer contiguous to the interior volume; and wherein the decomposition of the sacrificial material leaves an air gap at the closed interior volume previously occupied by the sacrificial material.
Claim 33
Independent Claim
92 words
A method of forming an air gap within a structure comprising the steps of: using a sacrificial material to occupy a closed interior volume in the structure; heating the sacrificial material to cause it to decompose into one or more gaseous decomposition products; and removing at least one of the one or more gaseous decomposition products by passage through at least one solid layer contiguous to the interior volume; and wherein the decomposition of the sacrificial material leaves an air gap at the closed interior volume previously occupied by the sacrificial material.
Claim 34
Dependent Claim
45 words
A method as set forth in claim 30, wherein the at least one solid layer is a dielectric material through which the at least one of the one or more gaseous decomposition products can pass by diffusion under conditions not detrimental to the semiconductor structure.
Claim 35
Dependent Claim
51 words
A method as set forth in claim 30, wherein the at least one solid layer is a porous dielectric material through which the at least one of the one or more gaseous decomposition products can pass through pores in the porous dielectric material under conditions not detrimental to the semiconductor structure.
Claim 36
Dependent Claim
16 words
A method as set forth in claim 30, wherein said sacrificial material is a cyclic olefin.
Claim 37
Dependent Claim
15 words
A method as set forth in claim 33, wherein said cyclic olefin is a bicycloolefin.
Claim 38
Dependent Claim
16 words
A method as set forth in claim 30, wherein said sacrificial material is a norbornene-type polymer.
Claim 39
Dependent Claim
165 words
A method as set forth in claim 35, wherein said norbornene-type polymer comprises repeat units of the general formula: ##STR32## wherein R 1 and R 4 independently represent hydrogen or linear or branched (C 1 to C 20 ) alkyl; R 2 and R 3 independently represent hydrogen, linear or branched (C 1 to C 20 ) alkyl or the groups: ##STR33## R 9 independently is hydrogen, methyl, or ethyl; R 10 , R 11 , and R 12 independently represent linear or branched (C 1 to C 20 ) alkyl, linear or branched (C 1 to C 20 ) alkoxy, linear or branched (C 1 to C 20 ) alkyl carbonyloxy, and substituted or unsubstituted (C 6 to C 20 ) aryloxy; m is a number from 0 to 4; and n is a number from 0 to 5; and at least one of substituents R 2 and R 3 is selected from the silyl group represented by the formula set forth under Ia.
Claim 40
Dependent Claim
55 words
A method as set forth in claim 36 wherein in Formula I above, m is preferably 0 or 1 as represented by structures Ib and Ic, respectively: ##STR34## wherein R 1 to R 4 are as previously defined and at least one of R 2 and R 3 is a silyl substituent represented by Ia.
Claim 41
Dependent Claim
60 words
A method as set forth in claim 36, wherein R 1 and R 4 taken together with the two ring carbon atoms to which they are attached comprise a repeat unit of the following structure: ##STR35## wherein B is a methylene group, q is a number from 2 to 6, and R 2 and R 3 are as defined above.
Claim 42
Dependent Claim
184 words
A method as set forth in claim 36, wherein said norbornene-type polymer further comprises hydrocarbyl substituted polycyclic repeating units selected from units represented by Formula II below: ##STR36## wherein R 5 , R 6 , R 7 , and R 8 independently represent hydrogen, linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl, or vinyl; any of R 5 and R 6 or R 7 and R 8 can be taken together to form a (C 1 to C 10 ) alkylidenyl group, R 5 and R 8 when taken with the two ring carbon atoms to which they are attached can represent saturated and unsaturated cyclic groups containing 4 to 12 carbon atoms or an aromatic ring containing 6 to 17 carbon atoms; and p is 0, 1, 2, 3, or 4.