US6265294B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit having double bottom anti-reflective coating layer
Assignee: Advanced Micro Devices Inc
•
Filing: 1999-08-12
•
Granted: 2001-07-24
•
Expires: 2019-08-12
Abstract
Abstract A fabrication method reduces the amount of discoloration on interlevel dielectric layers due to anti-reflective coatings (ARC). The invention utilizes a barrier layer, such as, silicon nitride (SiN) that prevents the anti-reflective coating from contacting the interlevel dielectric layer (ILD 0 ). The anti-reflective coating can be silicon oxynitride (SiON) deposited by LPCVD or PECVD.
Inventors
- 👤 Stephen Keetai Park
- 👤 Guarionex Morales
- 👤 Bharath Rangarajan
- 👤 Jeff Shields
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:27
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/65; H10P14/6502; H10P14/6506; H10P14/66; H10P14/662; H10P14/694; H10P14/6943; H10P14/69433; H10P50/00; H10P50/73; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10W20/071; H10W20/074; H10W20/40; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
111 words
A method of fabricating an integrated circuit, the integrated circuit having a contact, the method comprising: depositing an insulative layer over a gate stack; depositing a barrier layer over the insulative layer; depositing an anti-reflective coating layer over the barrier layer; etching the insulative layer, the barrier layer, and the anti-reflective coating layer to form an aperture for the contact; depositing a conformal conductive layer over the anti-reflective coating layer and in the aperture; and removing the conformal conductive layer above the anti-reflective coating layer and the anti-reflective coating layer by a polishing technique, thereby leaving conductive material associated with the conformal conductive layer in the aperture to form the contact.
Claim 2
Independent Claim
111 words
A method of fabricating an integrated circuit, the integrated circuit having a contact, the method comprising: depositing an insulative layer over a gate stack; depositing a barrier layer over the insulative layer; depositing an anti-reflective coating layer over the barrier layer; etching the insulative layer, the barrier layer, and the anti-reflective coating layer to form an aperture for the contact; depositing a conformal conductive layer over the anti-reflective coating layer and in the aperture; and removing the conformal conductive layer above the anti-reflective coating layer and the anti-reflective coating layer by a polishing technique, thereby leaving conductive material associated with the conformal conductive layer in the aperture to form the contact.
Claim 3
Dependent Claim
17 words
The method of claim 1 , wherein the anti-reflective coating layer is a bottom anti-reflective coating layer.
Claim 4
Dependent Claim
14 words
The method of claim 2 , wherein the anti-reflective coating layer is silicon oxynitride.
Claim 5
Dependent Claim
13 words
The method of claim 3 , wherein the barrier layer comprises silicon nitride.
Claim 6
Dependent Claim
28 words
The method of claim 4 , wherein the barrier layer is between 100 and 1000 Å thick and the anti-reflective coating layer is 100 to 1000 Å thick.
Claim 7
Dependent Claim
12 words
The method of claim 1 wherein the conformal conductive layer is tungsten.
Claim 8
Independent Claim
84 words
A method of fabricating a contact for an integrated circuit including a gate stack covered by an insulative layer, the method comprising: depositing a silicon nitride layer over the insulative layer; depositing a silicon oxynitride layer over the silicon nitride layer; etching an aperture through the insulative layer, the silicon nitride layer, and the silicon oxynitride layer; and depositing a tungsten material in the aperture to form the contact; wherein the tungsten material is deposited in the aperture and above the silicon oxynitride layer.
Claim 9
Independent Claim
84 words
A method of fabricating a contact for an integrated circuit including a gate stack covered by an insulative layer, the method comprising: depositing a silicon nitride layer over the insulative layer; depositing a silicon oxynitride layer over the silicon nitride layer; etching an aperture through the insulative layer, the silicon nitride layer, and the silicon oxynitride layer; and depositing a tungsten material in the aperture to form the contact; wherein the tungsten material is deposited in the aperture and above the silicon oxynitride layer.
Claim 10
Dependent Claim
16 words
The method of claim 7 , wherein the silicon oxynitride is 100 to 1000 Å thick.
Claim 11
Dependent Claim
21 words
The method of claim 8 further comprising: removing the tungsten material above the silicon oxynitride layer with a chemical mechanical polish.
Claim 12
Dependent Claim
17 words
The method of claim 9 further comprising: removing the silicon oxynitride layer with a chemical mechanical polish.
Claim 13
Dependent Claim
17 words
The method of claim 10 , wherein the silicon nitride layer remains after the chemical mechanical polish.
Claim 14
Dependent Claim
17 words
The method of claim 7 , wherein the insulative layer is an interlevel dielectric layer (ILD0) layer.
Claim 15
Dependent Claim
18 words
The method of claim 12 , wherein the silicon oxynitride layer is between 100 and 1000 Å thick.
Claim 16
Dependent Claim
17 words
The method of claim 13 , wherein the silicon nitride layer is 100 to 1000 Å thick.
Claim 17
Independent Claim
108 words
A method of manufacturing an integrated circuit, the integrated circuit having a contact with reduced charge gain or charge loss, the method comprising: depositing an insulative layer over a gate stack; depositing a barrier layer over the insulative layer; depositing an anti-reflective coating layer over the barrier layer; etching the insulative layer, the barrier layer, and the anti-reflective coating layer to form an aperture; depositing a conformal conductive layer over the anti-reflective coating layer and in the aperture; and removing the conformal conductive layer above the anti-reflective coating layer and the anti-reflective coating layer by a polishing technique, thereby leaving conductive material in the aperture to form contact.
Claim 18
Independent Claim
108 words
A method of manufacturing an integrated circuit, the integrated circuit having a contact with reduced charge gain or charge loss, the method comprising: depositing an insulative layer over a gate stack; depositing a barrier layer over the insulative layer; depositing an anti-reflective coating layer over the barrier layer; etching the insulative layer, the barrier layer, and the anti-reflective coating layer to form an aperture; depositing a conformal conductive layer over the anti-reflective coating layer and in the aperture; and removing the conformal conductive layer above the anti-reflective coating layer and the anti-reflective coating layer by a polishing technique, thereby leaving conductive material in the aperture to form contact.
Claim 19
Dependent Claim
17 words
The method of claim 15 , wherein the anti-reflective coating layer is a bottom anti-reflective coating layer.
Claim 20
Dependent Claim
14 words
The method of claim 15 , wherein the anti-reflective coating layer is silicon oxynitride.
Claim 21
Dependent Claim
23 words
The method of claim 15 , wherein the barrier layer is a silicon nitride layer and is between 100 and 1000 Å thick.
Claim 22
Dependent Claim
18 words
The method of claim 17 , wherein the silicon anti-reflective coating layer is 100 to 1000 Å thick.
Claim 23
Dependent Claim
13 words
The method of claim 15 , wherein the conformal conductive layer is tungsten.
References Cited (Backward Citations)
US5936272A
Cited
US5518948A
Cited
US6113140A
Cited
US6013582A
Cited
US6004850A
Cited
US6004857A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-07-23 | 2005-01-22 | 2005-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-07-23 | 2009-01-22 | 2009-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-07-23 | 2013-01-22 | 2013-07-24 | $7700.00 | Window Closed / Lapsed |