Nonvolatile semiconductor memory and method of fabrication

Claim 2

A nonvolatile semiconductor memory cell comprising: a semiconductor substrate of a first conductivity type; a common source region of a second conductivity type in a first direction within the substrate; a first drain region and a second drain region of the second conductivity type in the first direction within the substrate; an insulating film on the substrate; an insulating island in direct contact with the insulating film above the common source region and also in direct contact with the insulating film to a second side of the common source region nearest the second drain region; a conductive first floating gate on the insulating film to a first side of the common source region nearest the first drain region, the first floating gate being contiguous to the insulating island; a conductive second floating gate on the first floating gate and also on the insulating island; a dielectric film on exposed surfaces of both the first and second floating gates; and a conductive control gate in a second direction on the dielectric film on the second floating gate.

Claim 3

The nonvolatile semiconductor memory cell according to claim 1 , wherein the insulating film above each of the common source and drain regions is thicker than the insulating film above any other region of the substrate.

Claim 4

The nonvolatile semiconductor memory cell according to claim 1 , wherein said conductive first floating gate is also partially on the insulating film above the common source region.

Claim 5

The nonvolatile semiconductor memory cell according to claim 2 , wherein said conductive first floating gate is also partially on the insulating film above the common source region.

Claim 6

The nonvolatile semiconductor memory cell according to claim 1 , wherein the conductive first floating gate layer extends partially under said insulating island.

Claim 7

The nonvolatile semiconductor memory cell according to claim 1 , wherein the dielectric film is a thermal oxide or an ONO composite.

Claim 8

A nonvolatile semiconductor memory cell comprising: a semiconductor substrate of a first conductivity type in a first direction within the substrate; a first drain region and a second drain region of the second conductivity type in the first direction within the substrate; an insulating film on the substrate; an insulating island in direct contact with the insulating film above the common source region and also in direct contact with the insulating film on a second side of the common source region nearest the second drain region; a conductive floating gate on the insulating island and also on the insulating film to a first side of the common source region nearest the first drain region; a dielectric film on exposed surfaces of the floating gate; and a conductive control gate in a second direction on the dielectric film on the floating gate.

Claim 9

A nonvolatile semiconductor memory cell comprising: a semiconductor substrate of a first conductivity type in a first direction within the substrate; a first drain region and a second drain region of the second conductivity type in the first direction within the substrate; an insulating film on the substrate; an insulating island in direct contact with the insulating film above the common source region and also in direct contact with the insulating film on a second side of the common source region nearest the second drain region; a conductive floating gate on the insulating island and also on the insulating film to a first side of the common source region nearest the first drain region; a dielectric film on exposed surfaces of the floating gate; and a conductive control gate in a second direction on the dielectric film on the floating gate.

Claim 10

The nonvolatile semiconductor memory cell according to claim 5 , wherein the-insulating film above each of the common source and drain regions is thicker than the insulating film above any other region of the substrate.

Claim 11

The nonvolatile semiconductor memory cell according to claim 5 , wherein said conductive floating gate is also on the insulating film above the common source region.

Claim 12

The nonvolatile semiconductor memory cell according to claim 6 , wherein said conductive floating gate is also on the insulating film above the common source region.

Claim 13

The nonvolatile semiconductor memory cell according to claim 7 , wherein the dielectric film is a thermal oxide or an ONO composite.

Claim 14

A nonvolatile semiconductor memory cell structure having a pair of transistors sharing an asymmetric floating gate structure, the memory cell structure comprising: a semiconductor substrate of a first conductivity type; a common source region of said second conductivity type in said substrate; a first drain region of a second conductivity type located on a first side of said common source region in said substrate; a second drain region of said second conductivity type located on a second of said common source region in said substrate; an insulating spacer located over a part of said common source region corresponding to said second side and extending laterally beyond said second side; an asymmetric floating gate structure lying partially on said insulating spacer and centered above and extending laterally beyond said first and second sides of said common source region, said gate structure having first and second portions corresponding to said first and second sides of said common source region, respectively, said first portion being located more closely to said common source region than said second portion because of said insulating spacer therebetween such that said gate structure is asymmetric; and a control gate on said floating gate structure.

Claim 15

A nonvolatile semiconductor memory cell structure having a pair of transistors sharing an asymmetric floating gate structure, the memory cell structure comprising: a semiconductor substrate of a first conductivity type; a common source region of said second conductivity type in said substrate; a first drain region of a second conductivity type located on a first side of said common source region in said substrate; a second drain region of said second conductivity type located on a second of said common source region in said substrate; an insulating spacer located over a part of said common source region corresponding to said second side and extending laterally beyond said second side; an asymmetric floating gate structure lying partially on said insulating spacer and centered above and extending laterally beyond said first and second sides of said common source region, said gate structure having first and second portions corresponding to said first and second sides of said common source region, respectively, said first portion being located more closely to said common source region than said second portion because of said insulating spacer therebetween such that said gate structure is asymmetric; and a control gate on said floating gate structure.

Claim 16

The cell structure of claim 12 , wherein said asymmetric floating gate structure includes a first floating gate layer and a second floating gate layer, said first floating gate layer being located oppositely to said insulating spacer such that said first floating gate layer is located over and extends laterally beyond a first side of said common source region.

Claim 17

The cell structure of claim 13 , wherein a thickness of said first floating gate layer is less than a thickness of said insulating spacer such that said second floating gate layer is asymmetric about said common source region.

Claim 18

The structure of claim 13 , wherein said first floating gate layer extends partially under said insulating spacer.

Claim 19

The cell structure as in claim 12 , further comprising a insulating layer on said substrate and under said insulating spacer and said gate structure, said insulating layer being thick where located over said common source region and said first and second drain regions and thin elsewhere.

Claim 20

The cell structure of claim 12 , further comprising: a dielectric layer on exposed surfaces of said insulating spacer and said gate structure underneath said control gate.

Claim 21

The cell structure of claim 17 , wherein said dielectric layer is a thermal oxide or an ONO composite.

Claim 22

The nonvolatile semiconductor memory device according to claim 1 , wherein the drain regions are a fixed distance to either side of the common source regions.

Claim 23

The nonvolatile semiconductor memory device according to claim 7 , wherein the drain regions are a fixed distance to either side of the common source regions.