USRE29395E
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating a double heterostructure injection laser utilizing a stripe-shaped region
Assignee: NEC Corp
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Filing: 1976-06-15
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Granted: 1977-09-13
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Expires: 1996-06-15
Abstract
Abstract A semiconductor laser device includes a narrow elongated semiconductor region of the same conductivity type as another semiconductor region lying in the vicinity of the active region of the laser device. The elongated region extends in depth from the surface of the device to the vicinity of the active region. A surface semiconductor layer of an opposite conductivity type covers the entire surface of the device except for the elongated region.
Inventors
- 👤 Hiroo Yonezu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 08:33
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H10; H10H; H10H20/00; H10H20/80; H01S5/2054; H01S5/2059
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
183 words
A method of producing a GaAs-Al x Ga 1-x As double hetero-structure injection laser comprising the steps of preparing an n-type GaAs substrate, epitaxially growing a first layer of n-type Al x Ga 1-x As on one major surface of said substrate, epitaxially growing a second layer of .[.P-type.]. GaAs on said first layer, epitaxially growing a third layer of p-type Al x Ga 1-x As on said second layer, epitaxially growing a fourth layer of n-type GaAs on said third layer, selectively diffusing p-type impurities into an elongated surface portion of said fourth layer to form a thin elongated p-type region on the surface of said fourth layer extending depthwise to a portion of said third layer, and forming first and second electrodes in ohmic contact with the whole surface of said fourth layer and with the other major surface of said substrate, respectively, wherein excitation current supplied through said first electrode is allowed to flow substantially only through the deepest portion of said thin elongated p-type region as the result of a reverse bias developed between said third and fourth layers.
Claim 2
Independent Claim
183 words
A method of producing a GaAs-Al x Ga 1-x As double hetero-structure injection laser comprising the steps of preparing an n-type GaAs substrate, epitaxially growing a first layer of n-type Al x Ga 1-x As on one major surface of said substrate, epitaxially growing a second layer of .[.P-type.]. GaAs on said first layer, epitaxially growing a third layer of p-type Al x Ga 1-x As on said second layer, epitaxially growing a fourth layer of n-type GaAs on said third layer, selectively diffusing p-type impurities into an elongated surface portion of said fourth layer to form a thin elongated p-type region on the surface of said fourth layer extending depthwise to a portion of said third layer, and forming first and second electrodes in ohmic contact with the whole surface of said fourth layer and with the other major surface of said substrate, respectively, wherein excitation current supplied through said first electrode is allowed to flow substantially only through the deepest portion of said thin elongated p-type region as the result of a reverse bias developed between said third and fourth layers.
Claim 3
Dependent Claim
36 words
The method of claim 1, further comprising the step of forming a pair of reflecting surfaces at the ends of said first through said fourth layers in the direction perpendicular to said thin elongated p-type region.
Claim 4
Dependent Claim
12 words
The method of claim 1, wherein said p-type impurities are of zinc.
References Cited (Backward Citations)
US3363195A
Cited
US3479613A
Cited
US3495140A
Cited
US3579055A
Cited
US3617929A
Cited
US3617828A
Cited
US3758875A
Cited
US3783351A
Cited
US3780358A
Cited
US3691476A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-09-12 | 1981-03-14 | 1981-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-09-12 | 1985-03-14 | 1985-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-09-12 | 1989-03-14 | 1989-09-13 | $7700.00 | Window Closed / Lapsed |