Method of producing resist patterns

Abstract

Abstract The invention relates to a method for the manufacture of positive resist structures by means of short-wave UV rays and has the objective to develop such a method in a manner such that increased sensitivity and resolution as well as high thermal stability and, in addition, transparency in the wave-length range above 260 nm can be achieved. According to the invention, it is provided for this purpose to use as the resist material copolymers of 1 to 70 mol % alkylmethacrylate with an alkyl radical having 1 to 4 C atoms, and 99 to 30 mol % of an ethylenically unsaturated monomer with chlorine and/or cyan substituents. The method according to the invention is particularly well suited for producing resist structures about 0.5 to 2 mu m thick by means of UV rays in the wave-length range between about 180 to 260 nm.

Inventors

• 👤 Siegfried Dr. Birkle
• 👤 Roland Dr. Rubner
• 👤 Hans Hauschildt
• 👤 Eva-Maria Rissel

Bibliographic Details