Method of manufacturing a semiconductor device comprising an insulating film for component isolation

Claim 1

A method for manufacturing a semiconductor device comprising the steps of: (a) forming a masking material at a predetermined part of a surface of a semiconductor substrate, and etching said semiconductor substrate using said masking material as a mask to form a recess; (b) covering by a first insulating film the surface of said semiconductor substrate under such conditions that said masking material is still disposed, said first insulating film comprising an insulating film in which an etching rate at a side surface at a step may be greater than an etching rate at other parts, such as a plasma CVD Si0 2 film, a plasma CVD Si 3 N 4 film, a sputtered Si0 2 film or a low-pressure CVD phosphosilicate glass film; (c) etching said first insulating film to selectively remove said first insulating film covering the side surface of said recess to thereby form a V-shaped groove between the side surface of said recess and said first insulating film remaining in said recess; (d) simultaneously removing said masking material and said first insulating film formed thereover; (e) forming a second insulating film on an upper surface of said semiconductor substrate including said V-shaped groove formed in said step (c) in such a way that an upper surface thereof may become even; and (f) etching the upper surface of said second insulating film to leave said first and second insulating films in said recess.

Claim 2

A method for manufacturing a semiconductor device comprising the steps of: (a) forming a masking material at a predetermined part of a surface of a semiconductor substrate, and etching said semiconductor substrate using said masking material as a mask to form a recess; (b) covering by a first insulating film the surface of said semiconductor substrate under such conditions that said masking material is still disposed, said first insulating film comprising an insulating film in which an etching rate at a side surface at a step may be greater than an etching rate at other parts, such as a plasma CVD Si0 2 film, a plasma CVD Si 3 N 4 film, a sputtered Si0 2 film or a low-pressure CVD phosphosilicate glass film; (c) etching said first insulating film to selectively remove said first insulating film covering the side surface of said recess to thereby form a V-shaped groove between the side surface of said recess and said first insulating film remaining in said recess; (d) simultaneously removing said masking material and said first insulating film formed thereover; (e) forming a second insulating film on an upper surface of said semiconductor substrate including said V-shaped groove formed in said step (c) in such a way that an upper surface thereof may become even; and (f) etching the upper surface of said second insulating film to leave said first and second insulating films in said recess.

Claim 7

A method for manufacturing a semiconductor device comprising the steps of: (a) forming a masking material at a predetermined part of a surface of a semiconductor substrate, and etching said semiconductor substrate using said masking material as a mask to form a recess; (b) covering by a first insulating film the surface of said semiconductor substrate under such conditions that said masking material is still disposed, said first insulating film comprising an insulating film in which an etching rate at a side surface at a step may be greater than an etching rate at other parts, such as a plasma CVD Si0 2 film, a plasma CVD Si 3 N 4 film, a sputtered Si0 2 film or a low-pressure CVD phosphosilicate glass film; (c) etching said first insulating film to selectively remove said first insulating film covering the side surface of said recess to thereby form a V-shaped groove between the side surface of said recess and said first insulating film remaining in said recess; (d) simultaneously removing said masking material and said first insulating film formed thereover; (d') forming a thermal oxide film on the exposed surface of said semiconductor substrate at least in the inner surface of said V-shaped groove; (e) forming a second insulating film on an upper surface of said semiconductor substrate including said V-shaped groove formed in said step (c) in such a way that an upper surface thereof may become even; and (f) etching the upper surface of said second insulating film to leave said first and second insulating films in said recess.

Claim 8

A method for manufacturing a semiconductor device comprising the steps of: (a) forming a masking material at a predetermined part of a surface of a semiconductor substrate, and etching said semiconductor substrate using said masking material as a mask to form a recess; (b) covering by a first insulating film the surface of said semiconductor substrate under such conditions that said masking material is still disposed, said first insulating film comprising an insulating film in which an etching rate at a side surface at a step may be greater than an etching rate at other parts, such as a plasma CVD Si0 2 film, a plasma CVD Si 3 N 4 film, a sputtered Si0 2 film or a low-pressure CVD phosphosilicate glass film; (c) etching said first insulating film to selectively remove said first insulating film covering the side surface of said recess to thereby form a V-shaped groove between the side surface of said recess and said first insulating film remaining in said recess; (d) simultaneously removing said masking material and said first insulating film formed thereover; (d') forming a thermal oxide film on the exposed surface of said semiconductor substrate at least in the inner surface of said V-shaped groove; (e) forming a second insulating film on an upper surface of said semiconductor substrate including said V-shaped groove formed in said step (c) in such a way that an upper surface thereof may become even; and (f) etching the upper surface of said second insulating film to leave said first and second insulating films in said recess.