Patent EP0076006A2 successfully refreshed from Google Patents.
EP0076006A2
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EP
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Semiconductor device comprising a field effect transistor
Assignee: Koninklijke Philips NV
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Filing: 1982-09-24
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Granted: —
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Expires: 2002-09-24
Abstract
Abstract A semiconductor device comprising a semiconductor body (1) includes a field effect transistor and an active transistor region with two electrode zones (4, 5) one of which (5) surrounds the other (4), and an island zone (6) which is situated therebetween. These zones enclose channel regions (7, 8) over which there are provided gate electrodes (9, 10), the first one (9) of which surrounds the second one (10). The gate electrodes are connected to bond pads (11, 12) present outside the active transistor region. The first gate electrode (9) is interrupted at the area of the connection from the second gate electrode (10) to a bond pad (12), both its ends (20, 21) being connected to another bond pad (11). Even at very high frequencies, the transistor exhibits a high gain, a high transconductance and a low input attenuation.
Inventors
- 👤 A.H.J. Nieveen Van Dijkum
- 👤 Robbert Carel Thuis
- 👤 Paul Zandveld
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 10:26
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/611; H10D89/00; H10D89/60; H10D89/601; H10D89/611; H10W; H10W72/00; H10W72/90; H10W72/931; H10W72/932; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
191 words
A semiconductor device comprising a semiconductor body which includes a field effect transistor and which is partly covered with an insulating layer, said semiconductor body comprising an active transistor region with a number of semiconductor zones of the one conductivity type which are embedded in the semiconductor body and which adjoin the surface thereof, said semiconductor zones forming two electrode zones, one of which surrounds the other, and at least one island zone which is situated therebetween, thus enclosing channel regions of the opposite conductivity type, on the insulating layer above the channel regions there being provided gate electrodes, a first gate electrode thereof surrounding a second gate electrode, said gate electrodes being connected, respectively, to a first and a second bond pad which are provided on the insulating layer, the first bond pad being situated outside the active transistor region, characterized in that the second bond pad is also situated outside the active transistor region,.the first gate electrode being interrupted at the area .of the connection between the second gate electrode and the second bond pad, both ends of the first gate electrode being connected to the first bond pad.
Claim 2
Dependent Claim
191 words
A semiconductor device comprising a semiconductor body which includes a field effect transistor and which is partly covered with an insulating layer, said semiconductor body comprising an active transistor region with a number of semiconductor zones of the one conductivity type which are embedded in the semiconductor body and which adjoin the surface thereof, said semiconductor zones forming two electrode zones, one of which surrounds the other, and at least one island zone which is situated therebetween, thus enclosing channel regions of the opposite conductivity type, on the insulating layer above the channel regions there being provided gate electrodes, a first gate electrode thereof surrounding a second gate electrode, said gate electrodes being connected, respectively, to a first and a second bond pad which are provided on the insulating layer, the first bond pad being situated outside the active transistor region, characterized in that the second bond pad is also situated outside the active transistor region,.the first gate electrode being interrupted at the area .of the connection between the second gate electrode and the second bond pad, both ends of the first gate electrode being connected to the first bond pad.
Claim 3
Dependent Claim
51 words
A semiconductor device as claimed in Claim 1, characterized in that the connection between the second gate electrode and the second bond pad comprises an auxiliary connection which crosses and which is insulated from the connection between the first gate electrode and the first bond pad adjacent the active transistor region.
Claim 4
Dependent Claim
24 words
A semiconductor device as claimed in Claim 2, characterized in that the auxiliary connection exhibits an electrical resistance of between 5 and 25 ohms.
Claim 5
Dependent Claim
30 words
A semiconductor device as claimed in Claim 2 or 3, characterized in that the auxiliary connection is a conductor strip embedded in the insulating layer provided on the semiconductor body.
Claim 6
Dependent Claim
20 words
A semiconductor device as claimed in Claim 4, characterized in that the conductor strip is a strip of polycrystalline silicon.
References Cited (Backward Citations)
No citation records indexed.
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