Patent EP0098167A2 successfully refreshed from Google Patents.
EP0098167A2
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EP
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A field-effect semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1983-06-29
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Granted: —
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Expires: 2003-06-29
Abstract
Abstract A field-effect semiconductor device comprises a via-hole electrode (6a) formed so as to penetrate from the top to the back of the semiconductor substrate (1), a dielectric film (10) formed on the semiconductor substrate so as to be opposite to the via-hole electrode, and an electrode (26), forming a via-hole type of passive element, such as a capacitor, so as to improve the integration degree.
Inventors
- 👤 Shigeyuki Yamamura
- 👤 Yukihiro Takeuchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 13:31
CPC Classifications
H; H10; H10W; H10W44/00; H10W44/601; H10D; H10D88/00; H10W20/00; H10W20/01; H10W20/021; H10W20/023; H10W20/0234; H10W20/0242; H10W20/20
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
98 words
A field-effect semiconductor device comprising: a semiconductor substrate; a first via-hole electrode selectively formed in said semiconductor substrate so as to penetrate from the back surface to the top surface of said semiconductor substrate; a first dielectric film formed on the surface of said first via-hole electrode; a first electrode of a field-effect transistor, said first electrode being in contact with said first dielectric film and with said top surface of said semiconductor substrate; and a back-surface electrode formed on said back surface of said semiconductor substrate, said back-surface electrode together with said first via-hole electrode being unity.
Claim 2
Dependent Claim
98 words
A field-effect semiconductor device comprising: a semiconductor substrate; a first via-hole electrode selectively formed in said semiconductor substrate so as to penetrate from the back surface to the top surface of said semiconductor substrate; a first dielectric film formed on the surface of said first via-hole electrode; a first electrode of a field-effect transistor, said first electrode being in contact with said first dielectric film and with said top surface of said semiconductor substrate; and a back-surface electrode formed on said back surface of said semiconductor substrate, said back-surface electrode together with said first via-hole electrode being unity.
Claim 3
Dependent Claim
34 words
A fieldeffect semiconductor device as set forth in claim 1, wherein said first electrode of said field-effect transistor is one selected from among a source electrode, a gate electrode, and a drain electrode. ,
Claim 4
Dependent Claim
25 words
A field-effect semiconductor device as set forth in claim 2, said first electrode, said first dielectric film, and said first via-hole electrode constituting a capacitor.
Claim 5
Dependent Claim
22 words
A field-effect semiconductor device as set forth in claim 3, wherein said first electrode is said source electrode of said field-effect transistor.
Claim 6
Dependent Claim
16 words
A field-effect semiconductor device as set forth in claim 4, wherein said back-surface electrode is grounded.
Claim 7
Dependent Claim
69 words
A field-effect semiconductor device as set forth in claid4, further comprising: a second via-hole electrode formed in said semiconductor substrate so as to penetrate from the back surface to the top surface of said semiconductor substrate, said second via-hole electrode together with said back-surface electrode being a unity; and a second electrode formed on said top surface of said semiconductor substrate so as to contact said second via-hole electrode.
Claim 8
Dependent Claim
69 words
A field-effect semiconductor device as set forth in claid4, further comprising: a second via-hole electrode formed in said semiconductor substrate so as to penetrate from the back surface to the top surface of said semiconductor substrate, said second via-hole electrode together with said back-surface electrode being a unity; and a second electrode formed on said top surface of said semiconductor substrate so as to contact said second via-hole electrode.
Claim 9
Dependent Claim
28 words
A field-effect semiconductor device as set forth in claim 6, further comprising a resistive film formed between said first electrode and said second electrode on said semiconductor substrate.
Claim 10
Dependent Claim
101 words
A field-effect semiconductor device as set forth in claim 1, wherein said first electrode is a gate electrode of said field-effect transistor, further comprising: a source electrode of said field-effect transistor, formed on said semiconductor substrate; a second via-hole formed under said source electrode and in said semiconductor substrate so as to penetrate from the back surface to the top surface of said semiconductor substrate; a second via-hole electrode buried in said second via hole, and second via-hole electrode together with said back-surface electrode being a unity; and a conductive layer connected between said gate electrode and said first dielectric film.
Claim 11
Dependent Claim
17 words
A field-effect semiconductor device as set forth in claim 8, wherein said conductive layer comprises an inductor.
Claim 12
Dependent Claim
17 words
A field-effect semiconductor device as set forth in claim 9, wherein said device constitutes a matching circuit..
Claim 13
Dependent Claim
23 words
A field-effect semiconductor device as set forth in claim 3, wherein Said Semiconductor substrate and said first dielectric film have different etching rates.
Claim 14
Dependent Claim
25 words
12 A field-effect semiconductor device as set forth in claim 6 1 wherein Said semiconductor substrate and said second dielectric film have different etching rates.
Claim 15
Dependent Claim
29 words
A field-effect semiconductor device as set forth in claim 7, wherein said resistive film is of a semiconductor material dooped with impurity ions so as to form a resistor.
Claim 16
Dependent Claim
98 words
An integrated circuit device comprising at least one capacitor, said capacitor comprising: a semiconductor substrate; a via-hole electrode selectively formed in said semiconductor substrate so as to penetrate from the back surface to the top surface of said semiconductor substrate; a dielectric film formed on the surface of said via-hole electrode; an electrode of a field-effect transistor, said electrode being in contact with said dielectric film and with said top surface of said semiconductor substrate; and a back-surface electrode formed on said back surface of said semiconductor substrate, said back-surface electrode together with said via-hole electrode being unity.
Claim 17
Dependent Claim
98 words
An integrated circuit device comprising at least one capacitor, said capacitor comprising: a semiconductor substrate; a via-hole electrode selectively formed in said semiconductor substrate so as to penetrate from the back surface to the top surface of said semiconductor substrate; a dielectric film formed on the surface of said via-hole electrode; an electrode of a field-effect transistor, said electrode being in contact with said dielectric film and with said top surface of said semiconductor substrate; and a back-surface electrode formed on said back surface of said semiconductor substrate, said back-surface electrode together with said via-hole electrode being unity.
References Cited (Backward Citations)
No citation records indexed.
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