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EP0104685A2
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Method of manufacturing a mask for obtaining texturised patterns in resist layers using X-ray lithography
Assignee: Philips Intellectual Property and Standards GmbH
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Filing: 1983-08-31
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Granted: —
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Expires: 2003-08-31
Abstract
Abstract Translated from German Maske für Röntgenstrahllithographie mit einer Absorberstruktur aus einem stark Röntgenstrahlen absorbierenden Material, wobei die Absorberstruktur auf einer Membran aus Magnesium angebracht ist. Mask for X-ray lithography with an absorber structure made of a material that strongly absorbs X-rays, the absorber structure being attached to a membrane made of magnesium.
Inventors
- 👤 Arno Lentfer
- 👤 Holger Lüthje
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 08:15
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/22; Y; Y10; Y10S; Y10S430/00; Y10S430/167; Y10S430/168
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