Patent EP0117045A2 successfully refreshed from Google Patents.
EP0117045A2
Expired / Lapsed
EP
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Liquid crystal flat panel display
Assignee: Guardian Industries Corp
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Filing: 1984-01-13
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Granted: —
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Expires: 2004-01-13
Abstract
Abstract An electronic matrix array (30) and method for making same includes a plurality of first (32) and second (34) spaced apart address lines which cross each other at an angle and are spaced to form a plurality of crossover points therebetween. Diode means (36) between each of the crossover points establish selectable current paths through respective pairs of the first (32) and second (34) address lines. Each diode means (36) includes a body (40) of semiconductor material preferably comprised of amorphous silicon alloys and having a p-i-n- or n-i-p configuration and has an effective current conduction cross-sectional area formed by the overlapping juxtaposed common surface area of the address lines (32, 34). A method of making the array includes the steps of forming a continuous diode structure over a conductive substrate, forming a plurality of first and second spaced apart conductive address lines on opposite sides of the continuous diode structure, the second lines being formed by removing portions of said substrate which cross at an angle from said first address lines.
Inventors
- 👤 Robert Royce Johnson
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 18:50
CPC Classifications
H; H10; H10B; H10B63/00; H10B63/80; H10B63/82; H10D; H10D84/00; H10B63/20; H10N; H10N70/00; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/881; H10N70/882; H10N70/8828
Claims Analysis
Total Claims: 63
Claim 1
Independent Claim
120 words
An electronic matrix array characterized by: a plurality of first spaced apart address lines (32); a plurality of second spaced apart address lines (34), said second address lines crossing at an angle from and being spaced from said first address lines and forming a plurality of crossover points therewith; and selection means (36) between each of said crossover points for establishing selectable current paths through respective pairs of said first and second address lines, each said selection means including a body (40) of semiconductor material between said first and second address lines at said crossover points and having an effective current conduction cross-sectional area no larger than that formed by the overlapping juxtaposed common surface area of said address lines.
Claim 2
Dependent Claim
120 words
An electronic matrix array characterized by: a plurality of first spaced apart address lines (32); a plurality of second spaced apart address lines (34), said second address lines crossing at an angle from and being spaced from said first address lines and forming a plurality of crossover points therewith; and selection means (36) between each of said crossover points for establishing selectable current paths through respective pairs of said first and second address lines, each said selection means including a body (40) of semiconductor material between said first and second address lines at said crossover points and having an effective current conduction cross-sectional area no larger than that formed by the overlapping juxtaposed common surface area of said address lines.
Claim 3
Dependent Claim
19 words
An array according to claim 1 further characterized by said semiconductor bodies (40) are formed from amorphous semiconductor alloys.
Claim 4
Dependent Claim
15 words
An array according to claim 2 further characterized by said amorphous semiconductor alloys include silicon.
Claim 5
Dependent Claim
53 words
An array according to claim 3 further characterized by said semiconductor bodies (40) include an intrinsic amorphous silicon alloy region (40b) and a pair of doped amorphous silicon alloy regions (40a, 40c) on opposite respective sides of said intrinsic region between said intrinsic region and said first (32) and second (34) address lines.
Claim 6
Dependent Claim
23 words
An array according to claim 4 further characterized by said pair of doped amorphous silicon alloy regions (40a, 40c) are of opposite conductivity.
Claim 7
Dependent Claim
19 words
An array according to claim 1 further characterized by said semiconductor bodies (40) are formed from polycrystalline semiconductor material.
Claim 8
Dependent Claim
15 words
An array according to claim 6 further characterized by said polycrystalline semiconductor material includes silicon.
Claim 9
Dependent Claim
50 words
An array according to any one of claims 1 through 7 further characterized by a layer (52) of settable material having a normal substantially non-conductive state and a settable substantially non-resettable comparatively high conductive state between said selection means (36) and one of said plurality of address lines (32, 34).
Claim 10
Dependent Claim
18 words
An array according to claim 8 further characterized by said settable material (52) comprises an amorphous semiconductor alloy.
Claim 11
Dependent Claim
56 words
-An array according to any one of claims 1 through 7 further characterized by a layer (52) of resettable material having a substantially non-conductive state and a comparatively high conductive state between said selection means (36) and one of said plurality of address lines (32, 34), said resettable material being settable and resettable between said states.
Claim 12
Dependent Claim
30 words
An array according to claim 1 further characterized by a layer (62) of transducer material between said selection means (36) and one of said plurality of address lines (32, 34).
Claim 13
Dependent Claim
25 words
An array according to claim 1 further characterized by one of said plurality of address lines (32, 34) is formed from a transparent conductive material.
Claim 14
Independent Claim
87 words
A method of making an electronic matrix array characterized by the steps of: forming layers of semiconductor materials on a conductive substrate to form a continuous selection means structure over said substrate; forming a plurality of first spaced apart conductive address lines on said continuous selection means structure on the side thereof opposite said substrate; removing portions of said substrate to form a plurality of second spaced apart address lines crossing at an angle from said first address lines to form a plurality of crossover points therewith.
Claim 15
Independent Claim
87 words
A method of making an electronic matrix array characterized by the steps of: forming layers of semiconductor materials on a conductive substrate to form a continuous selection means structure over said substrate; forming a plurality of first spaced apart conductive address lines on said continuous selection means structure on the side thereof opposite said substrate; removing portions of said substrate to form a plurality of second spaced apart address lines crossing at an angle from said first address lines to form a plurality of crossover points therewith.
Claim 16
Dependent Claim
16 words
A method according to claim 13 further characterized by said semiconductor materials comprise amorphous semiconductor materials.
Claim 17
Dependent Claim
17 words
A method according to claim 14 further characterized by said amorphous semiconductor materials include amorphous semiconductor alloys.
Claim 18
Dependent Claim
52 words
A method according to claim 13 further characterized by said step of forming said layers of semiconductor materials on said substrate includes depositing a first doped semiconductor layer over said substrate, depositing an intrinsic semiconductor layer over said first doped layer, and depositing a second doped semiconductor layer over said intrinsic layer.
Claim 19
Dependent Claim
18 words
A method according to claim 16 further characterized by said semiconductor layers are formed of amorphous semiconductor material.
Claim 20
Independent Claim
32 words
A method according to any one of claims 16 or 17 characterized by the further step of annealing said amorphous semiconductor materials to convert said amorphous semiconductor materials to polycrystalline semiconductor materials.
Claim 21
Dependent Claim
31 words
A method according to claim 13 further characterized by said step of forming said layers of semiconductor materials on said substrate include forming layers of polycrystalline semiconductor materials on said substrate.
Claim 22
Dependent Claim
20 words
A method according to claim 13 further characterized by the step of short circuiting selected ones of said selection devices.
Claim 23
Dependent Claim
20 words
A method according to claim 20 characterized by the further step of open circuiting certain ones of said selection devices.
Claim 24
Independent Claim
53 words
A method according to any one of claims 13 through 21 characterized by the further step of depositing a layer of settable material over said selection means structure prior to forming said first address lines, said settable material having a normal substantially non-conductive state and a settable substantially non-resettable comparatively high conductive state.
Claim 25
Dependent Claim
24 words
A method according to claim 22 characterized by the further step of setting said settable material associated with selected ones of said selection devices.
Claim 26
Dependent Claim
20 words
A method according to claim 22 characterized by the further step of short circuiting selected ones of said selection devices.
Claim 27
Dependent Claim
55 words
A method according to claim 13 characterized by the further step of forming discrete layers of settable material on said selection means structure within the areas of said crossover points prior to forming said first address lines, said settable material having a normal substantially non-conductive state and a settable substantially non-resettable comparatively high conductive state.
Claim 28
Dependent Claim
24 words
A method according to claim 25 characterized by the further step of setting said settable material associated with selected ones of said selection devices.
Claim 29
Dependent Claim
52 words
A method according to claim 13 characterized by the further step of depositing a layer of resettable material over said selection means structure prior to forming said first address lines, said resettable material having a substantially non-conductive state and a comparatively high conductive state and being settable and resettable between said states.
Claim 30
Dependent Claim
59 words
A method according to claim 13 characterized by the further step of forming discrete layers of resettable material on said selection means structure within the areas of said crossover points prior to forming said first address lines, said resettable material having a substantially non-conductive state and a comparatively high conductive state and being settable and resettable between said states.
Claim 31
Dependent Claim
27 words
A method according to claim 13 further characterized by said step of removing portions of said substrate to form said second address lines includes etching said substrate.
Claim 32
Dependent Claim
36 words
A method according to claim 13 characterized by the further step of modifying the electrical conductivity of said selection means structure in selected areas thereof between first and second lines to decrease the electrical conductivity thereof.
Claim 33
Dependent Claim
33 words
A method according to claim 30 further characterized by said step of decreasing the electrical conductivity of said selection means structure includes oxidizing said selection means structure semiconductor material in said selected areas.
Claim 34
Dependent Claim
35 words
A method according to claim 30 further characterized by said step of decreasing the electrical conductivity of said selection means structure includes removing portions of said selection means structure semiconductor material in said selected areas.
Claim 35
Dependent Claim
20 words
A method according to claim 13 further characterized _by said first conductive address lines are formed from transparent conductive material.
Claim 36
Dependent Claim
114 words
A flat panel display characterized by: a first plurality of conductors (72, 74, 104, 106); a second plurality of conductors (78, 80, 108, 110, 112) spaced from said first plurality of conductors and crossing said first plurality of conductors at an angle forming crossover points therewith; at least a pair of electrodes (94, 96, 102); light influencing material between said electrodes; and a plurality of selection devices (82, 84, 86, 88, 90, 92, 116, 118, 120, 122, 124, 126, 128, 130) between said first and second conductors at said crossover points for selectively interconnecting said conductors to facilitate the application of set and reset voltages to said electrodes for operating said light influencing material.
Claim 37
Dependent Claim
114 words
A flat panel display characterized by: a first plurality of conductors (72, 74, 104, 106); a second plurality of conductors (78, 80, 108, 110, 112) spaced from said first plurality of conductors and crossing said first plurality of conductors at an angle forming crossover points therewith; at least a pair of electrodes (94, 96, 102); light influencing material between said electrodes; and a plurality of selection devices (82, 84, 86, 88, 90, 92, 116, 118, 120, 122, 124, 126, 128, 130) between said first and second conductors at said crossover points for selectively interconnecting said conductors to facilitate the application of set and reset voltages to said electrodes for operating said light influencing material.
Claim 38
Dependent Claim
31 words
A flat panel display according to claim 34 further characterized by said selection devices comprise diode bodies (82, 84, 86, 88, 90, 92, 116, 118, 120, 122, 124, 126, 128, 130).
Claim 39
Dependent Claim
34 words
A flat panel display according to claim 35 further characterized by said diode bodies (82, 84, 86, 88, 90, 92, 116, 118, 120, 122, 124, 126, 128, 130) are formed from amorphous silicon alloys.
Claim 40
Dependent Claim
49 words
A flat panel display according to claim 36 further characterized by said diode bodies (82, 84, 86, 88, 90, 92, 116, 118, 120, 122, 124, 126, 128, 130) comprise an intrinsic region (40b) and a pair of doped regions (40a, 40c) on opposite respective sides of said intrinsic region.
Claim 41
Dependent Claim
28 words
A flat panel display according to any one of claims 35 through 37 further characterized by selected ones (88, 118, 128) of said diode bodies are short circuited.
Claim 42
Dependent Claim
29 words
A flat panel display.according to any one of claims 35 through 38 further characterized by certain ones (82, 90, 92, 116, 130) of said diode bodies are open circuited.
Claim 43
Dependent Claim
25 words
A flat panel display according to any one of claims 34 through 39 further characterized by said light influencing material comprises liquid crystal display material.
Claim 44
Dependent Claim
28 words
A flat panel display according to claim 40 further characterized by said pair of electrodes (94, 96) are horizontally arranged with respect to said liquid crystal display material.
Claim 45
Dependent Claim
27 words
A flat panel display according to claim 35 further characterized by said pair of electrodes (102) are vertically arranged with respect to said liquid crystal display material.
Claim 46
Independent Claim
136 words
A method of making a flat panel display of the type including light influencing material characterized by the steps of: forming a continuous selection means structure on a conductive substrate; forming a first plurality of spaced apart conductors on said selection means structure; selectively etching said substrate to form a second plurality of spaced apart conductors spaced from and crossing said first conductors at an angle to form a plurality of crossover points therewith; removing said selection means structure in selected areas thereof left exposed by said conductors to form a plurality of selection devices at said crossover points; and selectively open circuiting and short circuiting selected ones of said selection devices to interconnect said first and second conductors to facilitate the application of set and reset voltages through said conductors to said light influencing material.
Claim 47
Independent Claim
136 words
A method of making a flat panel display of the type including light influencing material characterized by the steps of: forming a continuous selection means structure on a conductive substrate; forming a first plurality of spaced apart conductors on said selection means structure; selectively etching said substrate to form a second plurality of spaced apart conductors spaced from and crossing said first conductors at an angle to form a plurality of crossover points therewith; removing said selection means structure in selected areas thereof left exposed by said conductors to form a plurality of selection devices at said crossover points; and selectively open circuiting and short circuiting selected ones of said selection devices to interconnect said first and second conductors to facilitate the application of set and reset voltages through said conductors to said light influencing material.
Claim 48
Dependent Claim
43 words
A method according to claim 43 further characterized by said step of forming said continuous selection means structure includes forming a continuous diode structure and wherein said step of removing selected areas of said selection means structure forms a plurality of diode bodies.
Claim 49
Independent Claim
23 words
A method according to any one of claims 43 or 44 further characterized by said light influencing material includes liquid crystal display material.
Claim 50
Independent Claim
68 words
A method according to any one of claims 44 or 45 characterized by the further step of forming at least one electrode on said diode structure, forming said second conductors so that selected ones of said second conductors at least partially lie beneath said electrode, and removing said diode structure to form diode bodies between said at least one electrode and said selected ones of said second conductors.
Claim 51
Dependent Claim
24 words
A method according to claim 46 characterized by the further step of applying said liquid crystal display material over said at least one electrode.
Claim 52
Dependent Claim
39 words
A method according to claim 46 characterized by the further steps of forming a second electrode over one of said first conductors and applying said liquid crystal display material between said at least one electrode and said second electrode.
Claim 53
Dependent Claim
26 words
A method according to claim 45 further characterized by selected ones of said diode bodies are short circuited by passing a current through said selected diodes.
Claim 54
Dependent Claim
40 words
A method according to claim 45 further characterized by selected ones of said diode bodies are open circuited by passing a current through said selected bodies sufficient to open circuit the electrical connection between the electrodes forming said selected diodes.
Claim 55
Dependent Claim
92 words
A flat panel display characterized by: a first plurality of conductors (72, 74, 104, 106); a second plurality of conductors (76, 78, 80, 108, 110, 112); a pair of electrodes (94, 96, 102); light influencing material between said electrodes; and a plurality of selection devices (82, 84, 86, 88, 90, 92, 116, 118, 120, 122, 124, 126, 128, 130) interconnecting said first and second conductors and at least one of said electrodes to facilitate the application of set and reset voltages to said light influencing material through said first and second conductors.
Claim 56
Dependent Claim
92 words
A flat panel display characterized by: a first plurality of conductors (72, 74, 104, 106); a second plurality of conductors (76, 78, 80, 108, 110, 112); a pair of electrodes (94, 96, 102); light influencing material between said electrodes; and a plurality of selection devices (82, 84, 86, 88, 90, 92, 116, 118, 120, 122, 124, 126, 128, 130) interconnecting said first and second conductors and at least one of said electrodes to facilitate the application of set and reset voltages to said light influencing material through said first and second conductors.
Claim 57
Dependent Claim
20 words
A flat panel display according to claim 51 further characterized by said light influencing material includes liquid crystal display material.
Claim 58
Dependent Claim
36 words
A flat panel display according to any one of claims 51 or 52 further characterized by said selection devices comprise diode bodies (82, 84, 86, 88, 90, 92, 116, 118, 120, 122, 124, 126, 128, 130).
Claim 59
Dependent Claim
23 words
A flat panel display according to claim 53 further characterized by selected ones (88, 118, 128) of said diode bodies are short circuited.
Claim 60
Dependent Claim
30 words
A flat panel display according to any one of claims 53 or 54 further characterized by certain ones (82, 90, 92, 116, 130) of said diode bodies are open circuited.
Claim 61
Dependent Claim
23 words
A flat panel display according to claim 51 further characterized by one of said electrodes overlies (96) one of said first conductors (72).
Claim 62
Dependent Claim
24 words
A flat panel display according to claim 56 further characterized by said liquid crystal display material and said electrodes (94, 96) are substantially coplanar.
Claim 63
Dependent Claim
23 words
A flat panel display according to claim 53 further characterized by said liquid crystal display material and said electrodes (102) are vertically arranged.
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