Patent US4444902A successfully refreshed from Google Patents.
Patent EP0124924A1 successfully refreshed from Google Patents.
EP0124924A1
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Semiconductor devise for generating electromagnetic radiation
Assignee: Koninklijke Philips NV
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Filing: 1984-04-04
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Granted: —
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Expires: 2004-04-04
Abstract
Abstract A semiconductor LED or laser, having an active layer- shaped region (1) composed of a layer structure comprising active layers (4) and barrier layers (5). The layer structure constitutes a super lattice structure. Both the active layers (4) and the barrier layers (5) consist of either a stoichoimetric semiconductor compound or a semiconductor element.According to the invention, the active layers (4) each consist of mono layers and the barrier layers (5) each consist ofm mono layers, where 2≤ n ≤ 7,2≤m ≤ 7 and n + m≤ 12, in order to obtain an optimum combination of zone-folding effect and quantum well effect. Thus, lasers and LED's for wave-lengths in the visible part of the spectrum can be realized.
Inventors
- 👤 Ferd Elton Williams
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 16:08
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
136 words
A semiconductor device for generating electro-magnetic radiation in an active layer-shaped semiconductor region, in which the active region is composed of a layer structure comprising active layers of a first semiconductor material having substantially equal thicknesses which are located between and separated by barrier layers of a second semiconductor material likewise having substantially equal thicknesses and having a larger energy gap than the first semiconductor material, both the active layers and the barrier layers consisting either of a stoichiometric semiconductor compound or of a semiconductor element and together constituting a superlattice structure, characterized in that the active layers each comprise n mono layers and the barrier layer.s each comprise m mono layers, where n and m are integers and satisfy the conditions: 2 ≤ n ≤ 7, 2 < m < 7 and n+m ≤ 12.
Claim 2
Dependent Claim
136 words
A semiconductor device for generating electro-magnetic radiation in an active layer-shaped semiconductor region, in which the active region is composed of a layer structure comprising active layers of a first semiconductor material having substantially equal thicknesses which are located between and separated by barrier layers of a second semiconductor material likewise having substantially equal thicknesses and having a larger energy gap than the first semiconductor material, both the active layers and the barrier layers consisting either of a stoichiometric semiconductor compound or of a semiconductor element and together constituting a superlattice structure, characterized in that the active layers each comprise n mono layers and the barrier layer.s each comprise m mono layers, where n and m are integers and satisfy the conditions: 2 ≤ n ≤ 7, 2 < m < 7 and n+m ≤ 12.
Claim 3
Dependent Claim
37 words
A semiconductor device as claimed in Claim 1, characterized in that the thickness of both the active layers and the barrier layers is at least equal to 0.6 nm and is at most equal to 1.7 nm.
Claim 4
Dependent Claim
28 words
A semiconductor device as claimed in Claim 1 or 2, characterized in that the active layers consist of gallium arsenide and the barrier layers consist of aluminum arsenide.
Claim 5
Dependent Claim
28 words
A semiconductor device as claimed in Claim 1 or 2, characterized in that the active layers consist of gallium phosphide and the barrier layers consist of aluminum phosphide.
Claim 6
Dependent Claim
46 words
A semiconductor device as claimed in any one of the preceding Claims, characterized in that the device is a semiconductor laser, the layer-shaped active semiconductor region lying between two semiconductor cladding layers having a larger energy gap than the effective energy gap of the active region.
References Cited (Backward Citations)
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