EP0131992A1
Expired / Lapsed
EP
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Photosensitive polyamic acid derivative, method of manufacturing polyimide pattern on a substrate, and semiconductor device comprising a polyimide pattern obtained by using the said method
Assignee: Koninklijke Philips NV
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Filing: 1984-06-29
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Granted: —
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Expires: 2004-06-29
Abstract
Abstract @ A photosensitive polyamic acid derivative, compounds used in the manufacture of the derivative, method of manufacturing, method of manufacturing a polyimide pattern on a substrate, and semiconductor device comprising a polyimide pattern obtained by using the said method.
Inventors
- 👤 Lourens Minnema
- 👤 Johan Maria Van Der Zande
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 21:29
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/038; G03F7/0387; G03F7/027; G03F7/032; G03F7/037
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
112 words
A photosensitive polyamic acid derivative obtained by treating polyamic acid with a compound of formula I, wherein A is selected from the group consisting of a compound of formulae II, III, IV and IV A of the formula sheets, in which formulae R 1 is an alkyl group having 1-8 carbon atoms, R 2 is a hydrogen atom or a methyl group, R 3 is a hydrogen atom or an alkyl group having 1-4 carbon atoms, R 4 and R 5 are equal or different and each represent a hydrogen atom, a methyl group or a phenyl group, m has a value from 1-6, and n has the value 0 or 1.
Claim 2
Dependent Claim
112 words
A photosensitive polyamic acid derivative obtained by treating polyamic acid with a compound of formula I, wherein A is selected from the group consisting of a compound of formulae II, III, IV and IV A of the formula sheets, in which formulae R 1 is an alkyl group having 1-8 carbon atoms, R 2 is a hydrogen atom or a methyl group, R 3 is a hydrogen atom or an alkyl group having 1-4 carbon atoms, R 4 and R 5 are equal or different and each represent a hydrogen atom, a methyl group or a phenyl group, m has a value from 1-6, and n has the value 0 or 1.
Claim 3
Dependent Claim
55 words
A photosensitive polyamic acid derivative obtained by treating polyamic acid with a compound of formula V of the formula sheets, wherein R 2 has the meaning given hereinbefore, R 6 is a hydrogen atom or a methyl group, R 7 is an isopropyl group or a cyclohexyl group, and z has a value from 2-4.
Claim 4
Dependent Claim
55 words
A photosensitive polyamic acid derivative obtained by treating polyamic acid with a compound of formula V of the formula sheets, wherein R 2 has the meaning given hereinbefore, R 6 is a hydrogen atom or a methyl group, R 7 is an isopropyl group or a cyclohexyl group, and z has a value from 2-4.
Claim 5
Dependent Claim
30 words
A photosensitive polyamic acid derivative obtained by treating polyamic acid with a compound of formula VI of the formula sheets, wherein R 7 and z have the meanings given hereinbefore.
Claim 6
Dependent Claim
30 words
A photosensitive polyamic acid derivative obtained by treating polyamic acid with a compound of formula VI of the formula sheets, wherein R 7 and z have the meanings given hereinbefore.
Claim 7
Dependent Claim
33 words
Compounds of formulae VII, VIII or VIII A of the formula sheets, wherein R 1 , R 2 1 R 4 , R 5 , m and n have the meanings given hereinbefore.
Claim 8
Dependent Claim
33 words
Compounds of formulae VII, VIII or VIII A of the formula sheets, wherein R 1 , R 2 1 R 4 , R 5 , m and n have the meanings given hereinbefore.
Claim 9
Dependent Claim
64 words
A method of manufacturing a polyimide pattern on a substrate, characterized in that the substrate comprises a layer of the photosensitive polyamic acid derivative as claimed in Claim 1, 2 or 3, the said layer is pattern-wise exposed to light and developed and the polyamic acid derivative pattern is then subjected to a thermal treatment, the exposed polyamic acid derivative being converted into polyimide.
Claim 10
Dependent Claim
28 words
A semiconductor device having a semiconductor body comprising at least one semiconductor circuit element having a polyimide pattern obtained by using the method as claimed in Claim 5.
References Cited (Backward Citations)
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