Patent EP0141506A2 successfully refreshed from Google Patents.
EP0141506A2
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Method for producing a semiconductor structure
Assignee: AT&T Inc
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Filing: 1984-09-06
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Granted: —
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Expires: 2004-09-06
Abstract
Abstract Improvements in the lateral recrystallization of semiconductor material on buried insulator are disclosed. In particular, in the zone-melting process applied to seeded Si, it is found that scanning the molten zone in a [110] direction can result in substantially subboundary-free recrystallized material. Furthermore, appropriate patterning of the capping layer, to provide means for accommodating the volume change attending solidification of the semiconductor material, can result in significant decrease of defect density in laterally recaystallized semiconductor material on insulator. Especially advantageous results are produced when combining the improvements.
Inventors
- 👤 Terrence Kovacs
- 👤 Loren Neil Pfeiffer
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 19:50
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
209 words
Method for producing a semiconductor device, which comprises forming an insulator layer on at least a part of a major surface of a body comprising a single crystal substrate consisting substantially of a semiconductor material, providing at least one major surface region that is not covered by the insulator layer, the region to be referred to as the "seed" region, forming a second layer, consisting substantially of the said semiconductor material, on at least a part of the insulator layer and at least a part of the seed region, forming a capping layer on at least a part of the second layer, heating the semiconductor second layer to melt at least a part of the second layer, and solidifying the molten part of the second layer, CHARACTERIZED BY patterning the capping layer, the pattern adapted for providing means for accommodating a volume change of the solidifying material, and conducting said heating either by melting at least a major part of the second layer substantially simultaneously or by melting a part of the second layer so as to produce at least one solid-liquid interface and causing the interface to move across at least a part of the second layer thereby causing solidification of the second layer material at the interface.
Claim 2
Dependent Claim
209 words
Method for producing a semiconductor device, which comprises forming an insulator layer on at least a part of a major surface of a body comprising a single crystal substrate consisting substantially of a semiconductor material, providing at least one major surface region that is not covered by the insulator layer, the region to be referred to as the "seed" region, forming a second layer, consisting substantially of the said semiconductor material, on at least a part of the insulator layer and at least a part of the seed region, forming a capping layer on at least a part of the second layer, heating the semiconductor second layer to melt at least a part of the second layer, and solidifying the molten part of the second layer, CHARACTERIZED BY patterning the capping layer, the pattern adapted for providing means for accommodating a volume change of the solidifying material, and conducting said heating either by melting at least a major part of the second layer substantially simultaneously or by melting a part of the second layer so as to produce at least one solid-liquid interface and causing the interface to move across at least a part of the second layer thereby causing solidification of the second layer material at the interface.
Claim 3
Dependent Claim
36 words
Method according to claim 1, characterized by said patterning of the capping layer is such that, on average, at least about 95% of the second layer area to be recrystallized is covered by capping layer material.
Claim 4
Dependent Claim
29 words
Method according to claim 2, CHARACTERIZED IN THAT the patterned capping layer comprises strips oriented with their long dimension substantially parallel to the direction of motion of the interface.
Claim 5
Dependent Claim
23 words
Method according to claim 2, CHARACTERIZED IN THAT the patterned capping layer comprises a multiplicity of isolated windows extending to the second layer.
Claim 6
Dependent Claim
24 words
Method according to claim 1, CHARACTERIZED BY selecting the said semiconductor material from the group consisting of Si, Ge, III-V semiconductors, and II-VI semiconductors.
Claim 7
Dependent Claim
34 words
Method according to claim 3, CHARACTERIZED IN THAT the said semiconductor material is Si, the insulator layer consists substantially of Si0 2 , and the capping layer comprises a layer consisting substantially of Si02.
Claim 8
Dependent Claim
29 words
Method according to any one of preceding claims 1-5, characterized by melting said at least a major part of the second layer substantially simultaneously by means comprising visible radiation.
Claim 9
Dependent Claim
29 words
Method according to any one of preceding claims 1-6, CHARACTERIZED IN THAT the second layer is heated by means comprising a strip heater spaced apart from the capping layer.
Claim 10
Dependent Claim
56 words
Method according to any one of preceding claims 1-6, CHARACTERIZED IN THAT a heater brings the substrate to a temperature slightly below the melting point of the second layer material and another heater is translated, in spaced apart relation, across the capping layer, thereby melting a zone of said second layer material and translating the zone.
Claim 11
Dependent Claim
26 words
Method according to claim 1, CHARACTERIZED IN THAT the semiconductor device is selected from the group consisting of electronic devices, integrated optics devices, and optoelectronic devices.
References Cited (Backward Citations)
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