Abstract A dry etching apparatus according to the present invention is characterized in that an etching process is applied to a sample by using both physical etching means and chemical etching means. To perform such an etching process, the dry etching apparatus is provided with a chamber (3) for accommodating a sample (15) to be etched, a suction unit for reducing a pressure within the chamber, a gas introducing unit (16) for introducing a reactive gas into said chamber, an excitation unit (17) to excite the reactive gas for producing activated species allowing the sample to be etched due to chemical reaction, and an ion irradiation unit (7,10,11) for irradiating ions to the sample, thereby making it possible to independently control the energy or density of ions and the density of the activated species, thus setting optimum etching conditions in conformity with a material to be etched or an etching pattern.
A dry etching apparatus for accommodating a sample (15) to be etched within a chamber (3) under reduced pressure conditions, characterized by: means for introducing a reactive gas thereinto; means for irradiating said sample (15) with ions, thus etching said sample; and means (17) to excite said reactive gas for generating activated species allowing said sample to be etched by chemical reaction.
Claim 2
Dependent Claim
62 words
A dry etching apparatus for accommodating a sample (15) to be etched within a chamber (3) under reduced pressure conditions, characterized by: means for introducing a reactive gas thereinto; means for irradiating said sample (15) with ions, thus etching said sample; and means (17) to excite said reactive gas for generating activated species allowing said sample to be etched by chemical reaction.
Claim 3
Dependent Claim
30 words
A dry etching apparatus as set forth in claim 1, wherein said reactive gas is a gas of halogen compound, and said activated species is a radical or plasma thereof.
Claim 4
Dependent Claim
24 words
A dry etching apparatus as set forth in claim 2, wherein said reactive gas is a gas containing chloride (Cl) or a fluorine (F).
Claim 5
Dependent Claim
43 words
A dry etching apparatus as set forth in any one of claims 1 to 3, wherein said ions are ions of a rare gas or a gas of a halogen compound, or a mixture of said rare gas and said halogen compound gas.
Claim 6
Dependent Claim
21 words
A dry etching apparatus as set forth in claim 4, wherein said ions are ions of helium (He) or argon (Ar).
Claim 7
Dependent Claim
26 words
A dry etching apparatus as set forth in claim 4, wherein said ions are ions of a gas containing a chloride (Cl) or a fluorine (F).
Claim 8
Independent Claim
56 words
A method of dry etching in which a sample (15) is accommodated within a chamber (3) under reduced pressure conditions and is irradiated with ions to etch said sample, characterized in that a reactive gas is introduced and is excited to generate active species so that the sample is at least partially etched by chemical reaction.
Claim 9
Independent Claim
56 words
A method of dry etching in which a sample (15) is accommodated within a chamber (3) under reduced pressure conditions and is irradiated with ions to etch said sample, characterized in that a reactive gas is introduced and is excited to generate active species so that the sample is at least partially etched by chemical reaction.
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