Patent EP0184388A2 successfully refreshed from Google Patents.
EP0184388A2
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EP
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A photo-lithographic method and a photo-lithographic mask
Assignee: International Business Machines Corp
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Filing: 1985-11-28
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Granted: —
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Expires: 2005-11-28
Abstract
Abstract A deep-ultraviolet (DUV) portable conformable masking process includes the step of forming a polymerised fluorocarbon (such as Teflon) intermediate layer (24) between a diazo type positive photoresist layer (26), for example AZ1350J, and a deep-UV photoresist layer such as polymethylmethacrylate (20). The presence of the intermediate polymerised fluorocarbon layer reduces process variability, reduces exposure time of the deep-UV photoresist layer and permits micron and submicron resolution by optical means.
Inventors
- 👤 Patricia Elaine Cisneroz
- 👤 Hugo Alberto Emilio Santini
- 👤 Nungavaram Sundaram Viswanathan
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 13:06
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/095
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
48 words
A photolithographic method including forming a positive type photoresist layer (26) over a deep ultraviolet photoresist layer deposited on a substrate (22) the method being characterised by providing a polymerised fluorocarbon intermediate layer (24) between the deep ultraviolet photoresist layer (20) and the positive type photoresist layer (26).
Claim 2
Dependent Claim
48 words
A photolithographic method including forming a positive type photoresist layer (26) over a deep ultraviolet photoresist layer deposited on a substrate (22) the method being characterised by providing a polymerised fluorocarbon intermediate layer (24) between the deep ultraviolet photoresist layer (20) and the positive type photoresist layer (26).
Claim 3
Dependent Claim
18 words
A method as claimed in claim 1, in which the deep ultraviolet photoresist layer is a polymerised methacrylate.
Claim 4
Dependent Claim
30 words
A method as claimed in claim 1 or claim 2, in which the positive type photoresist layer comprises an alkali soluble phenol-formaldehyde polymer and naphthoquinone-(1,2) diazide sulfonic acid ester sensitiser.
Claim 5
Independent Claim
81 words
A method as claimed in any preceding claim, further including exposing said positive type photoresist layer with actinic radiation having a wavelength above 300nm, developing a relief image of the positive type photoresist layer with an alkaline developer solution, flood exposing said deep ultraviolet photoresist layer with light having a wavelength component within the range of 200nm to 300nm, and developing the deep ultraviolet photoresist layer and the polymerised fluorocarbon intermediate layer with an organic solvent to obtain a relief image.
Claim 6
Dependent Claim
18 words
A method as claimed in claim 4 , including the step of depositing material in said relief image.
Claim 7
Dependent Claim
15 words
A method as claimed in claim 4, including etching the substrate under said relief image.
Claim 8
Dependent Claim
40 words
A photolighographic mask including a positive type photoresist layer (26) formed over a deep ultraviolet photoresist layer (20) characterised by a polymerised fluorocarbon intermediate layer (24) between the positive type photoresist layer (26) and the deep ultraviolet photoresist layer (20).
Claim 9
Dependent Claim
40 words
A photolighographic mask including a positive type photoresist layer (26) formed over a deep ultraviolet photoresist layer (20) characterised by a polymerised fluorocarbon intermediate layer (24) between the positive type photoresist layer (26) and the deep ultraviolet photoresist layer (20).
Claim 10
Dependent Claim
19 words
A photolithographic mask as claimed in claim 7, in which the deep ultraviolet photoresist layer comprises a polymerised methacrylate.
Claim 11
Dependent Claim
31 words
A photolithographic mask as claimed in claim 7 or claim 8, in which the positive type photoresist layer comprises an alkali soluble phenol-formaldehyde polymer and naphthoquinone-(1,2) diazide sulfonic acid ester sensitiser.
References Cited (Backward Citations)
No citation records indexed.
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