Patent EP0196462A2 successfully refreshed from Google Patents.
EP0196462A2
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EP
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Random access memory
Assignee: Energy Conversion Devices Inc
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Filing: 1986-02-27
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Granted: —
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Expires: 2006-02-27
Abstract
Abstract A dynamic memory array (50) includes plural sets of spaced apart address lines (56, 58; 52, 54) and storage locations (62, 64, 66, 68) defined by crossovers of members of the plural sets of address lines. At each storage location a charge storage means (92) is coupled to a threshold means - (70). The charge storage means are addressable through the threshold means (70) by the application of selected potentials to the plural sets of address lines. The charge storage means and the threshold means can be formed as vertically arrayed, deposited, layers (52, 92a, 94a, 96, 98, <sub>1</sub>00) of semiconductor materials, and preferably from amorphous semiconductor alloys. Also disclosed is a light influencing display (<sub>4</sub>00) having an improved bidirectional threshold isolation means.
Inventors
- 👤 Zvi Yaniv
- 👤 Vincent C. Cannella
- 👤 Walter E. Chapelle
- 👤 Roger W. Pryor
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 22:41
CPC Classifications
G; G11; G11C; G11C13/00; G11C13/0002; G11C13/0021; G11C13/003; G11C11/00; G11C11/21; G11C11/24; G11C13/0009; H; H10; H10B; H10B12/00; G11C2213/00; G11C2213/30; G11C2213/33; G11C2213/70; G11C2213/72; G11C2213/74; G11C2213/76
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
45 words
A dynamic memory including charge storage means - (72) for storing an electrical charge, characterized by: threshold means (70) to enable the storage of charge in said charge storage means, said threshold means including at least one threshold device, formed from a deposited semiconductor material.
Claim 2
Dependent Claim
45 words
A dynamic memory including charge storage means - (72) for storing an electrical charge, characterized by: threshold means (70) to enable the storage of charge in said charge storage means, said threshold means including at least one threshold device, formed from a deposited semiconductor material.
Claim 3
Dependent Claim
18 words
A memory according to claim 1 further characterized by said deposited semiconductor material including an amorphous semiconductor alloy.
Claim 4
Dependent Claim
24 words
A memory according to any one of claims 1 or 2 further characterized by said at least one threshold device comprising a diode (74).
Claim 5
Dependent Claim
49 words
A memory according to any one of claims 1 or 2 further characterized by said threshold means comprising bidirectional threshold means (74 and 76) coupled in series with said charge storage means (72) to enable the charging of said charge storage means to either a positive or negative potential.
Claim 6
Dependent Claim
29 words
A memory according to claim 4 further characterized by said bidirectional threshold means (70) comprising a bidirectional threshold device (110) coupled in series with said charge storage means (104).
Claim 7
Dependent Claim
22 words
A memory according to any one of claims 1 through 5 further characterized by said charge storage means comprising a capacitor (224).
Claim 8
Dependent Claim
23 words
A memory according to any one of claims 1 through 5 further characterized by said charge storage means including a charge storage material.
Claim 9
Dependent Claim
82 words
A memory according to any one of claims 1 through 7 further characterized by said charge storage means and said threshold means being a multilayered structure of successively deposited vertically arrayed layers (52, 92a, 94a, 98, 100) of various materials, a first group (52, 92a, 94a) of said layers combining to form said charge storage means and a second group (96, 98, 100) of said layers combining to provide semiconductor interaction between said second group of layers to form said threshold means.
Claim 10
Dependent Claim
127 words
A memory according to any one of claims 1 through 7 further characterized by said memory including a multilayered structure of successively deposited layers of various materials (52, 92a, 94a, 96, 98, 100), said layers being vertically arrayed and including a first group of layers (52, 92a, 94a) forming said charge storage means for storing an electrical charge and a second group of layers (96, 98, 100) providing semiconductor interactions therebetween to form said threshold means to enable the storage of electrical charge within said charge storage means, said charge storage means being electrically chargeable at unique selected locations (62, 64, 66, 68) thereof, and addressing means for enabling the storage of charge in said charge storage means through said threshold means at said unique selected locations.
Claim 11
Dependent Claim
67 words
A memory according to claim 9 further characterized by said addressing means comprising a first plurality of spaced apart address lines (52, 54) disposed on one side of said multilayered structure and a second plurality of spaced apart address lines (56, 58) disposed on the other side of said multilayered structure, said second plurality of address lines crossing said first plurality of address lines at an angle.
Claim 12
Dependent Claim
37 words
1 1 . A random access memory including storing means (72) for storing charge and threshold means (70 for charging said storing means, characterized by: said threshold means being vertically arrayed with respect to said storing means.
Claim 13
Dependent Claim
37 words
1 1 . A random access memory including storing means (72) for storing charge and threshold means (70 for charging said storing means, characterized by: said threshold means being vertically arrayed with respect to said storing means.
Claim 14
Dependent Claim
18 words
A random access memory according to claim 11 further characterized by said storing means comprising a rechargeable capacitor.
Claim 15
Dependent Claim
28 words
A random access memory according to any one of claims 11 or 12 further characterized by said threshold means comprising bidirectional means (70) having first and second thresholds.
Claim 16
Dependent Claim
21 words
14 . A random access memory according to claim 13 further characterized by said first and second thresholds having opposite polarities.
Claim 17
Dependent Claim
27 words
A random access memory according to any one of claims 11 through 14 further characterized by said storing means being formed of deposited materials (52, 92a, 94a).
Claim 18
Dependent Claim
42 words
1 6. A random access memory according to any one of claims 11 through 15 further characterized by first and second spaced apart address lines (52, 56) with said storing means overlying a region of one of said address lines - (52).
Claim 19
Dependent Claim
25 words
A random access memory according to any one of claims 11 through 16 further characterized by said threshold means being formed from deposited semiconductor material.
Claim 20
Dependent Claim
20 words
A random access memory according to claim 17 further characterized by said deposited semiconductor material being an amorphous semiconductor alloy.
Claim 21
Dependent Claim
29 words
A random access memory according to any one of claims 11 or 1 3 through 1 8 further characterized by said storing means including a charge storage material (92a).
Claim 22
Dependent Claim
30 words
A random access memory according to any one of claims 1 1 through 19 further characterized by said threshold bidirectional means including first means (222) for generating an electric potential.
Claim 23
Dependent Claim
19 words
A random access memory according to claim 20 further characterized by said generating means including a photovoltaic diode (342).
Claim 24
Dependent Claim
96 words
A bidirectional threshold means for establishing first and second threshold voltages of opposite polarity including a first threshold device (302) having a first threshold voltage, a second threshold device (304) having a second threshold voltage, said first and second threshold devices being coupled together to establish first and second threshold voltages of opposite polarity, characterized by: first and second potential sources (306, 308) coupled in series with said first and second threshold devices respectively for back biasing said first and second threshold devices and increasing the effective absolute magnitude of said first and second threshold voltages.
Claim 25
Dependent Claim
96 words
A bidirectional threshold means for establishing first and second threshold voltages of opposite polarity including a first threshold device (302) having a first threshold voltage, a second threshold device (304) having a second threshold voltage, said first and second threshold devices being coupled together to establish first and second threshold voltages of opposite polarity, characterized by: first and second potential sources (306, 308) coupled in series with said first and second threshold devices respectively for back biasing said first and second threshold devices and increasing the effective absolute magnitude of said first and second threshold voltages.
Claim 26
Dependent Claim
20 words
A threshold means according to claim 22 further characterized by said threshold devices being formed from a deposited semiconductor material.
Claim 27
Dependent Claim
19 words
A threshold means according to claim 22 further characterized by said deposited semiconductor material comprising an amorphous semiconductor alloy.
Claim 28
Dependent Claim
23 words
A threshold means according to any one of claims 22 through 24 further characterized by said potential sources comprising photovoltaic devices (342, 344).
Claim 29
Dependent Claim
24 words
A threshold means according to any one of claims 22 through 25 further characterized by said photovoltaic devices being formed from deposited semiconductor material.
Claim 30
Dependent Claim
19 words
A threshold means according to claim 26 further characterized by said deposited semiconductor material comprising an amorphous semiconductor alloy.
Claim 31
Dependent Claim
168 words
A light influencing display including a plurality of pixels, at least one said pixel (400) including a pair of electrodes - (404, 432), at least one of said electrodes being light transmissive, isolation means (408a, 410b) coupled to one of said electrodes to enable the selective application of driving potentials across said electrodes, and light influencing material (436) disposed between said electrodes, said isolation means including bidirectional threshold means for establishing first and second threshold voltages of opposite polarity and including a first threshold device (408a) having a first threshold volt age, a second threshold device (410a) having a second threshold voltage, said first and second threshold devices being coupled together to establish first and second threshold voltages of opposite polarity said light influencing display being characterized by: first and second potential sources (408b, 410b) coupled in series with said first and second threshold devices respectively for back biasing said first and second threshold devices and increasing the effective absolute magnitude of said first and second threshold voltages.
Claim 32
Dependent Claim
168 words
A light influencing display including a plurality of pixels, at least one said pixel (400) including a pair of electrodes - (404, 432), at least one of said electrodes being light transmissive, isolation means (408a, 410b) coupled to one of said electrodes to enable the selective application of driving potentials across said electrodes, and light influencing material (436) disposed between said electrodes, said isolation means including bidirectional threshold means for establishing first and second threshold voltages of opposite polarity and including a first threshold device (408a) having a first threshold volt age, a second threshold device (410a) having a second threshold voltage, said first and second threshold devices being coupled together to establish first and second threshold voltages of opposite polarity said light influencing display being characterized by: first and second potential sources (408b, 410b) coupled in series with said first and second threshold devices respectively for back biasing said first and second threshold devices and increasing the effective absolute magnitude of said first and second threshold voltages.
Claim 33
Dependent Claim
17 words
A display according to claim 28 further characterized by said light influencing material being liquid crystal material.
Claim 34
Dependent Claim
21 words
A display according to any one of claims 28 or 29 further characterized by said potential sources being fixed potential sources.
Claim 35
Dependent Claim
20 words
A display according to any one of claims 28 through 30 further characterized by said potential sources comprising photovoltaic devices.
Claim 36
Dependent Claim
18 words
A display according to claim 31 further characterized by said photovoltaic devices being formed from deposited semiconductor material.
Claim 37
Dependent Claim
18 words
A display according to claim 32 further characterized by said deposited semiconductor material comprising an amorphous semiconductor alloy.
References Cited (Backward Citations)
No citation records indexed.
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