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EP0200129A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Positive photoresist compositions

Assignee: OCG Microelectronic Materials Inc
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Filing: 1986-04-19
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Granted: —
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Expires: 2006-04-19
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Abstract

Abstract Translated from German Durch einen Zusatz von Verbindungen der allgemeinen Formel worin R' bis R 4 jeweits Hydroxy oder C 1-6 -Alkoxy und R 5 bis R 10 jeweils Wasserstoff oder C 1-6 -Alkyl bedeutet, zu Positiv-Fortoresist-Zuammensetzungen auf Diazochinon/Novolakharz-Basis lassen sich in entsprechenden Foto-Resist-Beschichtungen, insbesondere wenn diese auf hohreflektive Substrate aufgebracht sind, Streustrahlungsund Halationseffekte wirksam unterdrücken. By adding compounds of the general formula wherein R 'to R 4 are each hydroxy or C 1-6 alkoxy and R 5 to R 10 are each hydrogen or C 1-6 alkyl. Positive fortoresist compositions based on diazoquinone / novolak resin can be found in corresponding photo-resist Coatings, especially when applied to highly reflective substrates, effectively suppress scattered radiation and halation effects.

Inventors

  • 👤 Hans Joachim Dr. Merrem

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-04 12:27
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/022; G03F7/0226; G03F7/09; G03F7/091

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