Abstract A plasma processing apparatus generates the processing reaction by turning into plasma a process fluid that is supplied to a material (3) to be processed located in a reaction vessel (1). A source of tight (9) irradiates both the process fluid turned into plasma and the material (3) with a pencil of rays such as ultraviolet rays or laser beams that produce a photo-induced reaction. The process fluid is turned into plasma by the energy of microwaves and is activated being irradiated with the pencil of rays, thereby to obtain an increased rate of reaction. Moreover, since the surface of the material (3) to be processed is irradiated with the pencil of rays, the material to be processed is prevented from being demaged by the plasma. Therefore, the material can be quickly processed without being damaged.
A plasma processing apparatus having a reaction vessel (1) with a chamber for containing a material (3) to be processed, and means for turning a process fluid supplied to the chamber (1) into a plasma; characterised in that: the apparatus has a source of electromagnetic radiation (9) for generating rays for application to the material (3) and the process fluid, to cause a photo-induced reaction in the plasma of process fluid.
Claim 2
Dependent Claim
71 words
A plasma processing apparatus having a reaction vessel (1) with a chamber for containing a material (3) to be processed, and means for turning a process fluid supplied to the chamber (1) into a plasma; characterised in that: the apparatus has a source of electromagnetic radiation (9) for generating rays for application to the material (3) and the process fluid, to cause a photo-induced reaction in the plasma of process fluid.
Claim 3
Dependent Claim
42 words
An apparatus according to claim 1, wherein the process fluid is turned into a plasma by the energy of microwaves (6), and the source of light is an electrodeless discharge tube (9) adapted to emit ultra-violet rays on energization by the microwaves.
Claim 4
Dependent Claim
35 words
An apparatus according to claim 1, or claim 2 wherein the process fluid and the material (3) to be processed are oxygen gas and a wafer, respectively, and said processing apparatus is a photoresist-removing apparatus.
Claim 5
Dependent Claim
48 words
An apparatus according to claim 1, or claim 2, wherein the process fluid and the material (3) to be processed are a reaction gas such as 0 2 , CF 4 or CC1 4 , and a wafer, respectively, and the processing apparatus is a plasma etching apparatus.
Claim 6
Dependent Claim
38 words
An apparatus according to claim 1 or claim 2, wherein the process fluid and the material (3) to be processed are a CVD reaction gas and a wafer, respectively, and the processing apparatus is a plasma CVD apparatus.
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