Patent EP0216017A2 successfully refreshed from Google Patents.
EP0216017A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device including forming a multi-level interconnection layer
Assignee: Toshiba Corp
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Filing: 1986-06-06
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Granted: —
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Expires: 2006-06-06
Abstract
Abstract A method of manufacturing a semiconductor device comprising the steps of preparing a semiconductor substrate (31) on which a first insulation film (30) is formed, forming a first conductive layer (35) on the first insulation film (30), forming a hillock (36) on the first conductive layer (35), forming a second insulation film (35,38) on the structure, removing that portion of the second insulation film (37, 38), in self-align with the hillock (36), which is on the hillock (36), thereby forming a contact hole leading to the first conductive layer (35), and forming on the structure a second conductive layer (41) extending into the contact hole and contacting the first conductive layer (35).
Inventors
- 👤 Yasukazu Patent Division K.K. Toshiba Mase
- 👤 Masahiro Patent Division K.K. Toshiba Abe
- 👤 Masaharu Patent Division K.K. Toshiba Aoyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 18:23
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10W20/032; H10W20/038; H10W20/056; H10W20/071; H10W20/093; H10W20/097; Y; Y10; Y10S; Y10S438/00; Y10S438/937
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
108 words
A method of manufacturing a semiconductor device characterized by comprising the steps of: preparing a semiconductor substrate (31) on which a first insulation film (30) is formed; forming a first conductive layer (35) on said first insulation 'film; forming a hillock (36) on said first conductive layer; forming a second insulation film (37, 38) on the structure; removing that portion of said second insulation film, in self-align with said hillock, which is on said hillock, thereby forming a contact hole (40) leading to said first conductive layer; and forming on the structure a second conductive layer (41) extending into said contact hole and contacting said first conductive layer.
Claim 2
Independent Claim
108 words
A method of manufacturing a semiconductor device characterized by comprising the steps of: preparing a semiconductor substrate (31) on which a first insulation film (30) is formed; forming a first conductive layer (35) on said first insulation 'film; forming a hillock (36) on said first conductive layer; forming a second insulation film (37, 38) on the structure; removing that portion of said second insulation film, in self-align with said hillock, which is on said hillock, thereby forming a contact hole (40) leading to said first conductive layer; and forming on the structure a second conductive layer (41) extending into said contact hole and contacting said first conductive layer.
Claim 3
Dependent Claim
59 words
A method of manufacturing a semiconductor device according to claim 1, characterized in that said step of forming said hillock comprises the steps of forming a film (34) having a hillock-suppressing function on said first conductive layer, forming a hole in said hillock-suppressing film, and thermally treating said first conductive layer through said hole formed in said hillock-suppressing film.
Claim 4
Dependent Claim
23 words
A method of manufacturing a semiconductor device according to claim 1, characterized in that said first conductive layer is made of an aluminium.
Claim 5
Dependent Claim
24 words
A method of manufacturing a semiconductor device according to claim 1, characterized in that said first conductive layer is made of an aluminium alloy.
Claim 6
Dependent Claim
22 words
A method of manufacturing a semiconductor device according to claim 1, characterized in that said hillock-suppressing film is made of a metal.
Claim 7
Dependent Claim
23 words
A method of manufacturing a semiconductor device according to claim 1, characterized in that said hillock-suppressing film is made of a metal compound.
Claim 8
Dependent Claim
22 words
A method of manufacturing a semiconductor device according to claim 1, characterized in that said hillock-suppressing film is made of silicon compound.
Claim 9
Independent Claim
113 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a semiconductor substrate (31) on which a first insulation film (30) is formed; forming a first conductive layer (51) on said first insulation film; forming on said first conductive layer a second insulation film (53) having a hillock-supressing function; forming a third insulation film (54, 55) on said second insulation film;' forming a hole (57) in said second and third insulation films; forming a hillock (58) of said first conductive layer by thermally heating said first conductive layer through said hole; and forming on the structure a second conductive layer (59) extending into said hole and contacting said first conductive layer.
Claim 10
Independent Claim
113 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a semiconductor substrate (31) on which a first insulation film (30) is formed; forming a first conductive layer (51) on said first insulation film; forming on said first conductive layer a second insulation film (53) having a hillock-supressing function; forming a third insulation film (54, 55) on said second insulation film;' forming a hole (57) in said second and third insulation films; forming a hillock (58) of said first conductive layer by thermally heating said first conductive layer through said hole; and forming on the structure a second conductive layer (59) extending into said hole and contacting said first conductive layer.
Claim 11
Dependent Claim
23 words
A method of manufacturing a semiconductor device according to claim 8, characterized in that said first conductive layer is made of an aluminium.
Claim 12
Dependent Claim
24 words
A method of manufacturing a semiconductor device according to claim 8, characterized in that said first conductive layer is made of an aluminium alloy.
Claim 13
Dependent Claim
28 words
A method of manufacturing a semiconductor device according to claim 8, characterized in that said second insulation film is formed under a temperature of substantially lower than 300°C.
Claim 14
Dependent Claim
34 words
A method of manufacturing a semiconductor device according to claim 8, characterized in that said second insulation film is made of a silicon oxidation film having a thickness of substantially larger than 0.05 µm.
Claim 15
Dependent Claim
34 words
A method of manufacturing a semiconductor device according to claim 8, characterized in that said second insulation film is made of a silicon nitride film having a thickness of substantially larger than 0.05 µm.
Claim 16
Dependent Claim
34 words
A method of manufacturing a semiconductor device according to claim 8, characterized in that said second insulation film is made of a metal oxidation film having a thickness of substantially larger than 0.05 µm.
References Cited (Backward Citations)
No citation records indexed.
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