Patent US4395884A successfully refreshed from Google Patents.
Patent EP0245538A2 successfully refreshed from Google Patents.
EP0245538A2
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EP
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Method for manufacturing a semiconductor device comprising dielectric isolation regions
Assignee: Toshiba Corp
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Filing: 1981-07-14
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Granted: —
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Expires: 2001-07-14
Abstract
Abstract A semiconductor device manufacturing method comprising the following steps: (a) forming a plurality of first grooves (63a-63e); (b) depositing an insulating material (65) on the whole surface of the semiconductor substrate (21) to fill the first grooves (63a-63e); (c) etching the insulating material layer (65) to leave the insulating material layer (66a-66e) in the first grooves (63a-63e); (d) etching those portions of the semiconductor substrate (21) which are between the insulating material layers (66b-66e) to form second grooves 68a-68c); (e) depositing an insulating material (70) on the whole surface of the semiconductor substrate (21) to fill the second groove(s) (68a-68c); and (f) etching the insulating material layer (70) to form a field region (73).
Inventors
- 👤 Hiroshi Iwai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 19:49
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/0145; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
227 words
A semiconductor device manufacturing method comprising: (a) a step of forming a plurality of first grooves (63a-63e) at predetermined portions of a semiconductor substrate (21); (b) a step of depositing an insulating material (65) with a thickness larger than half the opening width of each of first grooves (63a-63e). on the whole surface of the semiconductor substrate (21) to fill the first grooves (63a-63e) with the insulating material (65); (c) a step of etching the insulating material layer (65) on the semiconductor substrate (21) to leave the insulating material layer (66a-66e) in the first grooves (63a-63e); (d) a step of selectively etching those portions of the semiconductor substrate (21) which are between the insulating material layers (66b-66e) left in the first grooves (63b-63e) to form second grooves (68a-68c); (e) a step of depositing an insulating material (70) with a thickness larger than half the opening width of each of the second groove(s) (68a-68c) on the whole surface of the semiconductor substrate (21) to fill the second groove(s) (68a-68c) with the insulating material (70); and (f) a step of etching the insulating material layer (70) on the semiconductor substrate (21) to form a field region (73) consisting of the insulating material layer (72a-72c) left in the second groove (68a-68c) and the insulating material layers (66b-66e)left in the first grooves (63b-63e) on both sides of the second groove (68a-68c).
Claim 2
Dependent Claim
227 words
A semiconductor device manufacturing method comprising: (a) a step of forming a plurality of first grooves (63a-63e) at predetermined portions of a semiconductor substrate (21); (b) a step of depositing an insulating material (65) with a thickness larger than half the opening width of each of first grooves (63a-63e). on the whole surface of the semiconductor substrate (21) to fill the first grooves (63a-63e) with the insulating material (65); (c) a step of etching the insulating material layer (65) on the semiconductor substrate (21) to leave the insulating material layer (66a-66e) in the first grooves (63a-63e); (d) a step of selectively etching those portions of the semiconductor substrate (21) which are between the insulating material layers (66b-66e) left in the first grooves (63b-63e) to form second grooves (68a-68c); (e) a step of depositing an insulating material (70) with a thickness larger than half the opening width of each of the second groove(s) (68a-68c) on the whole surface of the semiconductor substrate (21) to fill the second groove(s) (68a-68c) with the insulating material (70); and (f) a step of etching the insulating material layer (70) on the semiconductor substrate (21) to form a field region (73) consisting of the insulating material layer (72a-72c) left in the second groove (68a-68c) and the insulating material layers (66b-66e)left in the first grooves (63b-63e) on both sides of the second groove (68a-68c).
Claim 3
Dependent Claim
65 words
A semiconductor device manufacturing method according to claim 1, further including a step of oxidizing or nitriding at least a part of the first and second grooves to grow an oxide film or nitride film in such a way that the grooves are not filled completely after the step (d) and before the step (e), or after the step (a) and before the step (b).
Claim 4
Dependent Claim
55 words
A semiconductor device manufacturing method according to claim 1, further including a step of doping the inside of the first and second grooves (63a-63e, 68a-68c) with impurity of same conductivity type as that of the substrate (21 after the step (d) and before the step (e), or after step (a) and before the step (b).
Claim 5
Dependent Claim
65 words
A semiconductor device manufacturing method according to claim 1, further including a step of doping at least a part of surface portion of the insulating material layer (65, 70) with a low-melting-point material and a step of melting the doped layer by heat treatment after the step (e) and before the step (f) as well as after the step (b) and before the step (c).
Claim 6
Dependent Claim
58 words
A semiconductor device manufacturing method according to claim 1, further including a step of depositing a low-melting-point insulating film on at least a part of the insulating material (65, 70) and a step of melting the low-melting-point insulating film after the step (e) and before step (f) as well as after the step (b) and before step (c).
Claim 7
Dependent Claim
50 words
A semiconductor device manufacturing method according to claim 1, wherein said field region (73) integrally consists of the insulating material layer (72a-72c) left in the second groove (68a-68c) and the insulating material layers (66b-66e) left in the first grooves (63b-63e) on both sides of the second groove (68a-68c) . _
Claim 8
Dependent Claim
138 words
A semiconductor device manufacturing method comprising: (a) a step of forming a plurality of first grooves (83) at predetermined portions of a semiconductor substrate (21); (b) a step of depositing an insulating material (85) with a thickness larger than half the opening width of each of the first grooves on the whole surface of the semiconductor substrate (21) to fill the first grooves (83) with the insulating material (85); (c) a step of etching the insulating material (85) on the semiconductor substrate (21) to leave the insulating material layer (86a-86c) in the first grooves (83); and (d) a step of applying field oxidation using an oxidation-resistive film as a mask to form an oxide film (92) and forming a field region made by this oxide film and the insulating material layer (86a-86c) left in the first grooves (83).
Claim 9
Dependent Claim
138 words
A semiconductor device manufacturing method comprising: (a) a step of forming a plurality of first grooves (83) at predetermined portions of a semiconductor substrate (21); (b) a step of depositing an insulating material (85) with a thickness larger than half the opening width of each of the first grooves on the whole surface of the semiconductor substrate (21) to fill the first grooves (83) with the insulating material (85); (c) a step of etching the insulating material (85) on the semiconductor substrate (21) to leave the insulating material layer (86a-86c) in the first grooves (83); and (d) a step of applying field oxidation using an oxidation-resistive film as a mask to form an oxide film (92) and forming a field region made by this oxide film and the insulating material layer (86a-86c) left in the first grooves (83).
Claim 10
Dependent Claim
41 words
A semiconductor device manufacturing method according to claim 7, further including a step of selectively etching at least part of the semiconductor substrate (21) which are between the insulating material layers left in the first grooves to form second groove(s) (90).
Claim 11
Dependent Claim
71 words
A semiconductor device manufacturing method according to claim 8, wherein after the etching according to the step (c), an oxidation-resistive film is deposited on the whole surface of the substrate (21) thus formed, and the oxidation-resistive film and those portions of the semiconductor substrate (21) which are between any two of the adjacent insulating material layers (86a-86c) left in the first grooves (83) are selectively etched according to said selective etching.
Claim 12
Dependent Claim
56 words
A semiconductor device manufacturing method according to claim 7, further including a step of oxidizing or nitriding at least a part of the first grooves (83) to grow an oxide film or nitride film in such a way that the first grooves (83) are not filled completely after the step (a) and before the step (b).
Claim 13
Dependent Claim
59 words
A semiconductor device manufacturing method according to claim 7, further including a step of doping the inside of the first and second grooves (83, 90) with impurity of the same conductivity type as that of the substrate (21) after the step (c) and before the step (d) as well as after the step (a) and before the step (b).
Claim 14
Dependent Claim
48 words
A semiconductor device manufacturing method according to claim 7, further including a step of depositing a low-melting-point insulating film on at least a part of the insulating material layer (85) and a step of melting the low-melting-point insulating film after the step (b) and before the step (c).
Claim 15
Dependent Claim
41 words
A semiconductor device manufacturing method according to claim 8, wherein an oxidation-resistive film is deposited on the whole surface of the substrate (21) thus formed and the oxidation-resistive film (88) in the second groove(s) is selectively etched after said selective etching.
Claim 16
Dependent Claim
45 words
A semiconductor device manufacturing method according to claim 7, further including a step of etching a part of the field oxide film (92) using the oxidation-resistive film (88) as the mask to make flat the..structure of the substrate (21) thus formed after the step (d).
Claim 17
Dependent Claim
39 words
A semiconductor device manufacturing method according to claim 7, wherein said field region integrally consists of said oxide film (92) and the insulating material layers (86a-86c) left in the first grooves (83) on both sides of the oxide film.
References Cited (Backward Citations)
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