Patent EP0334638A1 successfully refreshed from Google Patents.
EP0334638A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Improvements relating to the formation of thin films
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1989-03-22
•
Granted: —
•
Expires: 2009-03-22
Abstract
Abstract An improved apparatus and method for depositing thin films on a substrate by means of a CVD process is disclosed. The apparatus utilizes two types of energy input. A pair of electrodes are provided in a reaction chamber and are supplied with AC electrical energy at a frequency of from 1 to 5000 MHz for generating a plasma gas in a reaction space defined therebetween. The substrate is mounted within the reaction space on a substrate holder which is energized from a second electrical energy source at a frequency of from 1 to 500 KHz. The invention enables the deposition by a CVD process of films of carbon possessing advantageous features particularly as regards hardness characteristics, and also enables the deposition of such other materials as silicon nitride and other nitrides.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Shinji Imatou
- 👤 Noriya Ishida
- 👤 Mitsunori Sakama
- 👤 Mari Sasaki
- 👤 Takeshi Fukada
- 👤 Naoki Hirose
- 👤 Mitsunori Tsuchiya
- 👤 Atsushi Kawano
- 👤 Kazuhisa Nakashita
- 👤 Junichi Takeyama
- 👤 Tohiji Hamatani
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 12:28
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/517; H01J37/32009; H01J37/32082; H01J37/32532; H01J37/32568; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332; H01J2237/3321
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
82 words
A plasma processing apparatus comprising: a reaction chamber; a reactive gas supply system; a vacuum pump for evacuating said reaction chamber; spaced-apart electrodes provided in said reaction chamber in order to define a reaction space therebetween; a substrate holder provided in said reaction space; a first power source for applying AC electrical energy between said electrodes at a frequency for encouraging the generation of a plasma gas therebetween; and a second power source for applying AC electrical energy to said substrate holder.
Claim 2
Dependent Claim
82 words
A plasma processing apparatus comprising: a reaction chamber; a reactive gas supply system; a vacuum pump for evacuating said reaction chamber; spaced-apart electrodes provided in said reaction chamber in order to define a reaction space therebetween; a substrate holder provided in said reaction space; a first power source for applying AC electrical energy between said electrodes at a frequency for encouraging the generation of a plasma gas therebetween; and a second power source for applying AC electrical energy to said substrate holder.
Claim 3
Dependent Claim
50 words
The apparatus of claim 1 wherein said first power source includes a transformer capable of outputting electrical energy at 1 to 5000 MHz, one terminal of the secondary coil of the transformer being connected to one of said spaced-apart electrodes and the other terminal being connected to the other electrode.
Claim 4
Dependent Claim
39 words
The apparatus of claim 2 wherein one output terminal of said second power source is connected to a mid point of said secondary coil and the other terminal of said second power source is connected to said substrate holder.
Claim 5
Dependent Claim
24 words
The apparatus of claim 3 wherein the frequency of the electrical energy furnished by the second power source is from 1 to 500 KHz.
Claim 6
Dependent Claim
13 words
The apparatus of claim 3 or 4 wherein said mid point is grounded.
Claim 7
Independent Claim
84 words
A method of depositing a thin film coating on a substrate, said method comprising: disposing a substrate to be coated in a vacuum chamber; introducing a reactive gas into said vacuum chamber at an appropriate pressure; producing a plasma gas in said reaction chamber by applying high frequency energy to spaced-apart electrodes between which said substrate has been disposed; applying alternating electrical energy to said substrate; and depositing the product of said reactive gas on said substrate by virtue of said alternating electrical energy.
Claim 8
Independent Claim
84 words
A method of depositing a thin film coating on a substrate, said method comprising: disposing a substrate to be coated in a vacuum chamber; introducing a reactive gas into said vacuum chamber at an appropriate pressure; producing a plasma gas in said reaction chamber by applying high frequency energy to spaced-apart electrodes between which said substrate has been disposed; applying alternating electrical energy to said substrate; and depositing the product of said reactive gas on said substrate by virtue of said alternating electrical energy.
Claim 9
Dependent Claim
25 words
The method of claim 6 wherein said plasma gas is generated by applying between said electrodes high frequency electric energy at 1 to 5000 MHz.
Claim 10
Dependent Claim
23 words
The method of claim 6 or 7 wherein the frequency of said alternating energy applied to said substrate is 1 to 500 KHz.
Claim 11
Dependent Claim
82 words
A CVD method or apparatus for the deposition of thin films onto a substrate in a reaction chamber and wherein spaced-apart electrodes defining a reaction space within the reaction chamber are electrically energized at a frequency of from 1 to 5000 MHz (for example) for establishing a plasma in a reactive gas between the electrodes and the substrate is electrically energized at a frequency of from 1 to 500 KHz (for example) for depositing products of the plasma reaction onto the substrate.
Claim 12
Dependent Claim
82 words
A CVD method or apparatus for the deposition of thin films onto a substrate in a reaction chamber and wherein spaced-apart electrodes defining a reaction space within the reaction chamber are electrically energized at a frequency of from 1 to 5000 MHz (for example) for establishing a plasma in a reactive gas between the electrodes and the substrate is electrically energized at a frequency of from 1 to 500 KHz (for example) for depositing products of the plasma reaction onto the substrate.
Claim 13
Dependent Claim
57 words
A CVD method or apparatus for the deposition of carbon thin films (for example) wherein a plasma developed into a reactive gas is energized at a relatively high frequency (e.g. from 1 MHz to 5 GHz) and a substrate within the plasma space is energized at a relatively low frequency (e.g. from 1 KHz to 500 KHz).
Claim 14
Dependent Claim
57 words
A CVD method or apparatus for the deposition of carbon thin films (for example) wherein a plasma developed into a reactive gas is energized at a relatively high frequency (e.g. from 1 MHz to 5 GHz) and a substrate within the plasma space is energized at a relatively low frequency (e.g. from 1 KHz to 500 KHz).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.