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Patent EP0364215A2 successfully refreshed from Google Patents.
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EP0364215A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Plasma etching apparatus

Assignee: Canon Anelva Corp
•
Filing: 1989-10-10
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Granted: —
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Expires: 2009-10-10
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Abstract

Abstract A plasma etching apparatus comprising a treatment chamber (8) capable of being evacuated, an electrode structure comprising first and second electrodes (4 and 6) which face each other in the treatment chamber and a gas introducing means (2) provided in connection with the first electrode, and a radiofrequency power source (7) connected to the electrode structure for supplying radiofrequency electric power to a space between the gas introducing means and the second electrode. The gas introducing means comprises a graphite panel (22) having a silicide layer (23) formed at least on the surface of graphite facing the second electrode and has a large number of through-holes (3) for passing therethrough a gas fed to a space between the first electrode and the introducing means into the space between the gas introducing means and the second electrode.

Inventors

  • 👤 Tsutomu C/O Anelva Corp. Tsukada
  • 👤 Tatsuo C/O Anelva Corp. Asamaki

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-01 08:08
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 139 words
A plasma etching apparatus comprising a treatment chamber (8) capable of being evacuated, an electrode structure comprising first and second electrodes (4 and 6) which face each other in said treatment chamber, a gas introducing means (2) provided in association with said first electrode, and a radiofrequency power source (7) connected to said electrode structure for supplying radiofrequency electric power to a space between said gas introducing means and said second electrode, wherein said gas introducing means comprises a graphite panel (22) having a silicide layer (23) formed at least on the surface of the graphite facing said second electrode and further comprises a large number of through-­holes (3) for passing therethrough a gas fed into a space between said first electrode and said introducing means and into the space between said gas introducing means and said second electrode.
Claim 2
Dependent Claim 139 words
A plasma etching apparatus comprising a treatment chamber (8) capable of being evacuated, an electrode structure comprising first and second electrodes (4 and 6) which face each other in said treatment chamber, a gas introducing means (2) provided in association with said first electrode, and a radiofrequency power source (7) connected to said electrode structure for supplying radiofrequency electric power to a space between said gas introducing means and said second electrode, wherein said gas introducing means comprises a graphite panel (22) having a silicide layer (23) formed at least on the surface of the graphite facing said second electrode and further comprises a large number of through-­holes (3) for passing therethrough a gas fed into a space between said first electrode and said introducing means and into the space between said gas introducing means and said second electrode.
Claim 3
Dependent Claim 28 words
A plasma etching apparatus as claimed in claim 1, wherein said first electrode is integral with said gas introducing means and an electrode ring (9) is provided therebetween.
Claim 4
Dependent Claim 20 words
A plasma etching apparatus as claimed in claim 1 or 2, wherein said silicide layer is a silicon carbide layer.
Claim 5
Dependent Claim 21 words
A plasma etching apparatus as claimed in any preceding claim, wherein said graphite panel has through-holes of 0.1 to 0.5mm diameter.
Claim 6
Dependent Claim 68 words
A plasma etching apparatus as claimed in any preceding claim wherein a plasma is produced from the gas passed into the space between said gas introducing means and said second electrode, through the through-holes of said gas introducing means, using the radiofrequency electric power in order to effect therewith plasma-etching of an object (5) which is placed on the surface of said second electrode facing said first electrode.
Claim 7
Independent Claim 18 words
A method for plasma-etching an object using an apparatus according to any one of claims 1 to 5.
Claim 8
Dependent Claim 16 words
A plasma-etched object produced using an apparatus according to any one of claims 1 to 5.
Claim 9
Dependent Claim 17 words
Use of an apparatus according to any one of claims 1 to 5 for plasma-etching an object.

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