Patent EP0250097A1 successfully refreshed from Google Patents.
Patent EP0370775A2 successfully refreshed from Google Patents.
EP0370775A2
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EP
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Method of manufacturing semiconductor device
Assignee: Toshiba Corp
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Filing: 1989-11-21
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Granted: —
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Expires: 2009-11-21
Abstract
Abstract A method of manufacturing a semiconductor device comprising the steps of forming selectively an insulating layer (34) on a first conductive layer (33) deposited on a semiconductor substrate (31), treating the surface of the insulating layer (34) and the exposed surface of the first conductive layer (33) by a gas plasma containing halogen atoms, and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer (33) so as to form a second conductive layer (36). The gas plasma containing halogen atoms can be formed by introducing a gas containing halogen atoms into the treatment chamber housing the sample, and applying high frequency power. The gas plasma containing halogen atoms can be formed by introducing a gas containing halogen atoms into the treatment chamber to adsorb the halogen atoms on the inner wall of the chamber, and applying high frequency power. Alternatively, the gas plasma can be formed by applying high frequency power after placing the sample and a halogen containing material inside the chamber. By treatment with the gas plasma containing halogen atoms, a second conductive layer (36) can be deposited with good selectivity.
Inventors
- 👤 Rempei C/O Intellectual Property Division Nakata
- 👤 Hitoshi C/O Intellectual Property Division Itoh
- 👤 Takashi C/O Intellectual Property Division Endo
- 👤 Tohru C/O Intellectual Property Division Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 07:40
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
82 words
A method of manufacturing a semiconductor device, comprising the steps of depositing selectively an insulating layer (34) on a first conductive layer (33) formed on a semiconductor substrate (31); treating the surface of the insulating layer (34) and the exposed surface of the first conductive layer (33) with a gas plasma containing halogen atoms, and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer (33) so as to form a second conductive layer (36).
Claim 2
Independent Claim
82 words
A method of manufacturing a semiconductor device, comprising the steps of depositing selectively an insulating layer (34) on a first conductive layer (33) formed on a semiconductor substrate (31); treating the surface of the insulating layer (34) and the exposed surface of the first conductive layer (33) with a gas plasma containing halogen atoms, and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer (33) so as to form a second conductive layer (36).
Claim 3
Dependent Claim
43 words
A method according to claim 1, characterized in that the material of said first conductive layer (33) is one selected from the group consisting of aluminum, molybdenum, tungsten, copper, titanium, molybdenum silicide, tungsten silicide, titanium silicide, titanium nitride, silicon, germanium, GaAs and InP.
Claim 4
Dependent Claim
34 words
A method according to claim 1, characterized in that the material of said insulating layer (34) is one selected from the group consisting of silicon dioxide, silicon nitride, and these substances doped with impurities.
Claim 5
Dependent Claim
29 words
A method according to claim 1, characterized in that the material of said substrate (31) is one selected from the group consisting of silicon, germanium, GaAs, InP and sapphire.
Claim 6
Dependent Claim
44 words
A method according to claim 1, characterized in that the material of said second conductive layer (36) is one selected from the group consisting of aluminum, molybdenum, copper, tungsten, titanium, molybdenum silicide, tungsten silicide, titanium silicide, tantalum silicide, titanium nitride and silicon containing impurities.
Claim 7
Dependent Claim
26 words
A method according to claim 1, characterized in that said gas containing halogen atoms is a mixture of a halogen source gas and an inert gas.
Claim 8
Dependent Claim
22 words
A method according to claim 1, characterized in that said halogen source gas is a gas containing chlorine atoms or fluorine atoms.
Claim 9
Dependent Claim
42 words
A method according to claim 7, characterized in that said gas containing halogen atoms is at least one selected from the group consisting of Cℓ₂, AsCℓ₃, AsCℓ₅, BCℓ₃, CCℓ₄, PCℓ₃, PCℓ₅, SF₆, AsF₃, AsF₅, PF₃, PF₅, CHF₃, C₂F₆, C₃F₈, CF₄ and NF₃.
Claim 10
Dependent Claim
22 words
A method according to claim 1, further comprising the step of treating the treated surfaces by a gas plasma containing hydrogen atoms.
Claim 11
Dependent Claim
28 words
A method according to claim 6, characterized in that said inert gas is at least one selected from the group consisting of helium, neon, nitrogen, argon and krypton.
Claim 12
Dependent Claim
32 words
A method according to claim 6, characterized in that the partial pressure of halogen source gas in said gas containing halogen atoms is lower than the partial pressure of the inert gas.
Claim 13
Dependent Claim
28 words
A method according to claim 6, characterized in that the partial pressure of halogen source gas in said gas containing halogen atoms is 10⁻⁶ Torr - 10⁻³ Torr.
Claim 14
Dependent Claim
29 words
A method according to claim 1, characterized in that the treatment by said gas plasma containing halogen atoms is carried out at a pressure of 10⁻⁶ - 1 Torr.
Claim 15
Dependent Claim
23 words
A method according to claim 1, further comprising the step of forming a third conductive layer (37) connected to said second conductive layer.
Claim 16
Dependent Claim
44 words
A method according to claim 14, characterized in that the material of said third conductive layer (37) is one selected from the group consisting of aluminum, molybdenum, copper, tungsten, titanium, molybdenum silicide, tungsten silicide, titanium silicide, tantalum silicide, titanium nitride and silicon containing impurities.
Claim 17
Independent Claim
106 words
A method of manufacturing a semiconductor device comprising the steps of: forming selectively an insulating layer (34) on a first conductive layer (33) deposited on a semiconductor substrate (31); treating the surface of the insulating layer (34) and the exposed surface of the first conductive layer (33) by a gas plasma containing halogen atoms; and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer (33) so as to form a second conductive layer (36), said gas plasma containing halogen atoms being formed by providing a halogen source in a treatment chamber, and passing a discharge through the chamber.
Claim 18
Independent Claim
106 words
A method of manufacturing a semiconductor device comprising the steps of: forming selectively an insulating layer (34) on a first conductive layer (33) deposited on a semiconductor substrate (31); treating the surface of the insulating layer (34) and the exposed surface of the first conductive layer (33) by a gas plasma containing halogen atoms; and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer (33) so as to form a second conductive layer (36), said gas plasma containing halogen atoms being formed by providing a halogen source in a treatment chamber, and passing a discharge through the chamber.
Claim 19
Dependent Claim
35 words
A method according to claim 16, characterized in that said halogen source is provided by introducing a halogen source gas into the treatment chamber, and adsorbing the gas on the inner wall of the chamber.
Claim 20
Dependent Claim
24 words
A method according to claim 16, characterized in that said halogen source is provided by installing a halogen containing material in the treatment chamber.
Claim 21
Independent Claim
117 words
A method of manufacturing a semiconductor device comprising the step of: forming selectively an insulating layer (34) on a first conductive layer (33) deposited on a semiconductor substrate (31); treating the surface of the insulating layer (34) and the exposed surface of the first conductive layer (33) by a gas plasma containing halogen atoms; treating the treated surfaces by a gas plasma containing hydrogen atoms; and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer (33) so as to form a second conductive layer (36), said gas plasma containing halogen atoms being formed by providing a halogen source in a treatment chamber, and passing a discharge through the chamber.
Claim 22
Independent Claim
117 words
A method of manufacturing a semiconductor device comprising the step of: forming selectively an insulating layer (34) on a first conductive layer (33) deposited on a semiconductor substrate (31); treating the surface of the insulating layer (34) and the exposed surface of the first conductive layer (33) by a gas plasma containing halogen atoms; treating the treated surfaces by a gas plasma containing hydrogen atoms; and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer (33) so as to form a second conductive layer (36), said gas plasma containing halogen atoms being formed by providing a halogen source in a treatment chamber, and passing a discharge through the chamber.
Claim 23
Dependent Claim
33 words
A method according to claim 19, further comprising also the step of treating the surface by an inert gas plasma prior to the step of treating by the gas plasma containing halogen atoms.
References Cited (Backward Citations)
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