EP0444943A1
Expired / Lapsed
EP
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A method of manufacturing a bonded wafer
Assignee: Shin-Etsu Handotai Co Ltd
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Filing: 1991-02-28
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Granted: —
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Expires: 2011-02-28
Abstract
Abstract A method of manufacturing a bonded wafer comprising the steps of: preparing two wafers; forming a first oxide film over at least one face of one of the two wafers; joining the two wafers together face to face in a manner such that the first oxide film comes between the two wafers; heating the thus joined wafers at a high temperature to create bonding strength between the two wafers; subjecting the two joined wafers to a thermal oxidation treatment to thereby form a second oxide film all over the joined wafers; and grinding the exposed face of either of the two wafers, preferably the one over which the first oxide film is formed.
Inventors
- 👤 Tatsuo Ito
- 👤 Masami Nakano
- 👤 Yasuaki Nakazato
- 👤 Atsuo Uchiyama
- 👤 Takahiro Kida
- 👤 Tokio Takei
- 👤 Katsuo Yoshizawa
- 👤 Masao Fukami
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 22:23
CPC Classifications
H; H10; H10P; H10P52/00; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
168 words
A method of manufacturing a bonded wafer which comprises the steps of: preparing a first mirror wafer at least one face of which has specular gloss; preparing a second mirror wafer at least one face of which has specular gloss; forming a first oxide film over at least one face of said second mirror wafer which face has specular gloss; joining said first and second mirror wafers face to face in a manner such that said first oxide film formed on a specular-glossed face of said second mirror wafer is sandwiched between a specular-glossed face of said first mirror wafer and said second mirror wafer; heating the thus joined wafers at a high temperature to thereby create bonding strength between said two wafers; subjecting said two joined wafers to a thermal oxidation treatment to thereby form a second oxide film all over said joined wafers; and grinding the external face of either said first or second wafer until the wafer selected to be ground becomes a thin film.
Claim 2
Dependent Claim
24 words
A method as claimed in Claim 1 wherein the wafer selected to be ground at the end of the method is said second wafer.
Claim 3
Dependent Claim
20 words
A method as claimed in Claim 1 wherein said first oxide film is formed all over said second mirror wafer.
Claim 4
Dependent Claim
28 words
A method as claimed in Claim 1 wherein said first oxide film is formed only over one face of said second mirror wafer which face has specular gloss.
Claim 5
Dependent Claim
26 words
A method as claimed in Claim 1 wherein the thickness of said first oxide film is nearly equal to the thickness of said second oxide film.
Claim 6
Dependent Claim
26 words
A method as claimed in Claim 1 wherein the temperature for heating the joined wafers for creating bonding strength between the wafers is about 1100 °C.
Claim 7
Dependent Claim
13 words
A silicon single crystal bonded wafer made by the method of Claim 1.
References Cited (Backward Citations)
EP0192488A2
Cited
EP0337556A1
Cited
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