Patent EP0758799A2 successfully refreshed from Google Patents.
EP0758799A2
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EP
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InP/InGaAs monolithic integrated demultiplexer, photodetector, and heterojunction bipolar transistor
Assignee: AT&T Inc
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Filing: 1996-08-07
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Granted: —
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Expires: 2016-08-07
Abstract
Abstract The present invention relates to a monolithic integrated demultiplexing photoreceiver (10) that is formed on a semi-insulating InP substrate(16). A frequency routing device (11) is formed on the substrate and includes a first plurality of InP/InGaAs semiconductor layers. At least one p-i-n photodiode (12) is also formed on the substrate and includes a second plurality of InP/InGaAs semiconductor layers. Additionally, at least one single heterostructure bipolar transistor (18) is formed on the substrate and includes a third plurality of InP/InGaAs semiconductor layers. At least one layer from each of the first, second and third plurality of layers are substantially identical to one another. <IMAGE>
Inventors
- 👤 S. Chandrasekhar
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 07:23
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/103
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
89 words
A monolithic integrated demultiplexing photoreceiver (10) characterized by: a semi-insulating InP substrate (16); a frequency routing device (11) formed on said substrate including a first plurality of InP/InGaAs semiconductor layers; at least one p-i-n photodiode (12) formed on said substrate including a second plurality of InP/InGaAs semiconductor layers; at least one single heterostructure bipolar transistor (18) formed on said substrate including a third plurality of InP/InGaAs semiconductor layers, at least one layer from each of said first, second and third plurality of layers being substantially identical to one another.
Claim 2
Dependent Claim
31 words
The photoreceiver of claim 1, further characterized in that said second and third pluralities of semiconductor layers includes a common InGaAs collector layer (6) and a common InGaAs base layer (7).
Claim 3
Dependent Claim
28 words
The photoreceiver of claim 2, further characterized in that said common InGaAs collector layer (6) is doped n-type and said common InGaAs base layer (7) is doped p-type.
Claim 4
Dependent Claim
53 words
The photoreceiver of any of the preceding claims, further characterized in that said first, second and third plurality of layers includes a common n + InGaAsP layer (2) serving as a waveguide core for said frequency routing device and as an n-contact layer for said p-i-n photodiode and said single heterojunction bipolar transistor.
Claim 5
Dependent Claim
35 words
The photoreceiver of claim 4, further characterized in that said common n + InGaAsP layer (2) is disposed on an n- InP layer (1) serving as a lower cladding layer for said frequency routing device.
Claim 6
Dependent Claim
31 words
The photoreceiver of claim 4 or claim 5, further characterized in that said third plurality of layers includes an InP emitter layer (8) disposed on said common InGaAs base layer (7).
Claim 7
Dependent Claim
27 words
The photoreceiver of claim 6, further characterized in that said third plurality of layers further includes an InGaAs emitter contact layer disposed on said InP emitter layer.
Claim 8
Dependent Claim
33 words
The photoreceiver of any of claims 4 to 7, further characterized by an electrically isolating region disposed in said common n + InGaAsP layer between said frequency routing device and said p-i-n photodiode.
Claim 9
Dependent Claim
22 words
The photoreceiver of claim 8, further characterized in that said electrically isolating region comprises Fe implanted in said common n + InGaAsP.
Claim 10
Dependent Claim
36 words
The photoreceiver of any of the preceding claims further characterized by a plurality of said single heterojunction bipolar transistors formed on said substrate, said plurality of single heterojunction bipolar transistors being arranged in an amplifier configuration.
Claim 11
Dependent Claim
64 words
The photoreceiver of any of the preceding claims further characterized in that said frequency routing device has a plurality of output waveguides (11) and further comprising a plurality of said p-i-n photodiode (12) and said single heterojunction bipolar transistor (18) pairs formed on said substrate, each of said output waveguides having associated therewith one of said p-i-n photodiode and single heterojunction bipolar transistor pairs.
Claim 12
Independent Claim
70 words
A method for fabricating a monolithic integrated demultiplexing photoreceiver comprising the step of: depositing on a semi-insulating InP substrate a first series of layers forming a frequency routing device, said first series of layers including a first plurality of InP/InGaAs semiconductor layers; depositing a second series of layers that together with at least one of said first plurality of layers forms a p-i-n photodiode and a single heterostructure bipolar transistor.
Claim 13
Dependent Claim
44 words
The method of claim 12, characterized in that said at least one of said first plurality of layers serves as a waveguide core layer for said frequency routing device and as an n-contact layer for said p-i-n photodiode and said single heterojunction bipolar transistor.
Claim 14
Dependent Claim
20 words
The method of claim 13 wherein said layer serving as a waveguide core layer is an n + InGaAsP layer.
Claim 15
Dependent Claim
45 words
The method of claim 14, further characterized in that said first plurality of layers includes an n- InP layer serving as a lower cladding layer for said frequency routing device and wherein said n + InGaAsP layer is disposed on said n - InP layer.
Claim 16
Dependent Claim
34 words
The method of claim 14 or claim 15 further characterized by a step of implanting an electrically isolating region in said N + InGaAsP layer between said frequency routing device and said p-i-n photodiode.
Claim 17
Independent Claim
62 words
The method of any of claims 13 to 16 characterized in that the step of depositing said first plurality of layers includes the steps of: epitaxially growing a lower cladding layer, said waveguide core layer, a stop etch layer, and a strip loading layer; etching said strip loading layer to define a rib; epitaxially growing an upper cladding layer over said rib.
Claim 18
Dependent Claim
79 words
The method of claim 17, characterized in that the step of depositing said second series of layers includes the step of: depositing a mask over said frequency routing device; etching away said strip loading layer and upper cladding layer from portions of said substrate not covered by said mask such that said layer serving as said waveguide core layer is exposed; epitaxially growing over said waveguide core layer a collector layer, base layer, emitter layer and emitter contact layer;
Claim 19
Independent Claim
29 words
The method of any of claims 12 to 18, further characterized in that said second series of semiconductor layers includes an InGaAs collector layer and an InGaAs base layer.
Claim 20
Dependent Claim
25 words
The method of claim 19, further characterized in that said common InGaAs collector layer is doped n-type and said InGaAs base layer is doped p-type.
Claim 21
Dependent Claim
75 words
The photoreceiver of any of claims 1 to 11, characterized in that said frequency routing device comprises: a plurality of input waveguides; a first free space region connected to a plurality of input waveguides: an optical grating connected to the first free space region and comprising a plurality of unequal length waveguides; a second free space region connected to the optical grating; and a plurality of output waveguides connected to the second free space region.
References Cited (Backward Citations)
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