Semiconductor memory

Claim 2

The semiconductor memory of claim 1 wherein master bitlines are arranged in an interleaved configuration.

Claim 3

The semiconductor memory of claim 1 or 2 wherein pitch of the master bitlines is about twice the pitch of the local bitlines.

Claim 4

The semiconductor memory of claims 1, 2 or 3 wherein width of each master bitline is about one half of the pitch of the master bitlines.

Claim 5

The semiconductor memory of any preceding claim wherein each master bitline is of about the same length as each local bitline and is about one half of a column length between spaced sense amplifiers, and master bitlines are interleaved in alternating columns.

Claim 6

The semiconductor memory of any preceding claim wherein at least some of said sense amplifiers are arranged in a shared configuration.

Claim 7

The semiconductor memory of claim 6, further comprising four switches on a first side of each shared sense amplifier and four switches on a second side of each shared sense amplifier, each said switch operative to selectively couple an associated local bitline to the shared sense amplifier to permit access to memory cells coupled to that local bitline, and also to selectively isolate a non-selected subarray of memory cells from the shared sense amplifier, said four switches on said first side being off to isolate a first subarray on the first side from the sense amplifier, said four switches on the second side being off to isolate a second subarray on the second side from the sense amplifier.

Claim 8

The semiconductor memory of one of claims 1 - 6 wherein each sense amplifier is operatively coupled on one side thereof to a master bitline pair comprising a true master bitline and a complementary master bitline, each sense amplifier is selectively coupled on said one side to first and second local bitline pairs, said first local bitline pair comprising a first true local bitline and a first complementary local bitline, said second local bitline comprising a second true local bitline and a second complementary local bitline, and said memory further comprising: a first switch coupled between said first true local bitline and said true master bitline; a second switch coupled between said second true local bitline and said true master bitline; a third switch coupled between said first complementary local bitline and said complementary master bitline; a fourth switch coupled between said second complementary local bitline and said complementary master bitline; wherein said first and second switches are caused to be on and off, respectively, to access memory cells coupled to said first true local bitline, said first and second switches are off and on, respectively, to access memory cells coupled to said second true local bitline, said third and fourth switches are caused to be on and off, respectively, to access memory cells coupled to said first complementary local bitline, and said third and fourth switches are off and on, respectively, to access memory cells coupled to said second complementary local bitline.

Claim 9

The semiconductor memory of one of claims 1 - 6 wherein each sense amplifier is operatively coupled on one side to a master bitline pair comprising a true master bitline and a complementary master bitline, each sense amplifier is selectively coupled on said one side to first and second local bitline pairs, said first local bitline pair comprising a first true local bitline and a first complementary local bitline, said second local bitline comprising a second true local bitline and a second complementary local bitline, and said memory further comprising: a first switch coupled between said first true local bitline and a first sense amplifier input; a second switch selectively coupling said second true local bitline to said first sense amplifier input; a third switch coupled between said first complementary local bitline and a second sense amplifier input; a fourth switch selectively coupling said second complementary local bitline to said second sense amplifier input; wherein said first and second switches are caused to be on and off, respectively, to access memory cells coupled to said first true local bitline, said first and second switches are caused to be off and on, respectively, to access memory cells coupled to said second true local bitline, said third and fourth switches are caused to be on and off, respectively, to access memory cells coupled to said first complementary local bitline, and said third and fourth switches are caused to be off and on, respectively, to access memory cells coupled to said second complementary local bitline.

Claim 10

The semiconductor memory of claim 9 wherein said true master bitline is connected to said second true local bitline and said complementary master bitline is connected to said second complementary local bitline.

Claim 11

The semiconductor memory of one of claims 1 - 6 wherein each sense amplifier is operatively coupled on one side to a master bitline pair comprising a true master bitline and a complementary master bitline, each sense amplifier is selectively coupled on said one side to first and second local bitline pairs, said first local bitline pair comprising a first true local bitline and a first complementary local bitline, said second local bitline pair comprising a second true local bitline and a second complementary local bitline, said true master bitline being connected to said second true local bitline, said complementary master bitline being connected to said second complementary local bitline, and said memory further comprising: a first switch coupled between said first true local bitline and said true master bitline in proximity to a first sense amplifier input; a second switch selectively coupling said true master bitline to said first sense amplifier input; a third switch coupled between said first complementary local bitline and said complementary master bitline in proximity to a second sense amplifier input; a fourth switch selectively coupling said complementary master bitline to said second sense amplifier input; wherein said first and second switches are caused to be on and off, respectively, to access memory cells coupled to said first true local bitline, said first and second switches are caused to be off and on, respectively, to access memory cells coupled to said second true local bitline, said third and fourth switches are caused to be on and off, respectively, to access memory cells coupled to said first complementary local bitline, and said third and fourth switches are caused to be off and on, respectively, to access memory cells coupled to said second complementary local bitline.

Claim 12

The semiconductor memory of one of claims 9 - 11, wherein at least some of said sense amplifiers are arranged in a shared configuration, such that each shared sense amplifier is operatively coupled on the other side thereof to one master bitline pair and selectively coupled to two local bitline pairs.

Claim 13

The semiconductor memory of one of claims 9 - 11 wherein said first and third switches are controlled by a first common control line and said second and fourth switches are controlled by a second common control line.

Claim 14

The semiconductor memory of any preceding claim wherein said semiconductor memory comprises a dynamic random access memory.

Claim 15

The semiconductor memory of any preceding claim wherein each pair of master bitlines extends on one side of an associated sense amplifier in a folded bitline configuration, and master bitline pairs are interleaved in alternating columns.

Claim 16

The semiconductor memory of any preceding claim wherein the master bitlines are arranged in an open bitline configuration, with each master bitline pair comprising a true master bitline extending on one side of an associated sense amplifier and a complementary master bitline extending on an opposite side of the associated sense amplifier.

Claim 17

A semiconductor memory, comprising: a plurality of memory cells arranged in rows and columns for storing data, each column comprising: (i) at least one sense amplifier; (ii) a pair of master bitlines arranged in a folded bitline configuration and operatively coupled to at least one side of each sense amplifier in the column; (iii) two pairs of local bitlines coupled to memory cells on said one side of the sense amplifier, each local bitline pair being selectively coupled to the sense amplifier, with at least one of the two local bitline pairs selectively coupled to the sense amplifier via the master bitline pair; wherein the length of each master bitline pair is about a length of each local bitline pair, master bitline pitch is about twice local bitline pitch, and master bitline pairs are arranged in an interleaved configuration.

Claim 18

A semiconductor memory, comprising: a plurality of memory cells arranged in rows and columns for storing data, each column comprising: (i) at least one sense amplifier; (ii) a pair of master bitlines in an open bitline configuration, operatively coupled to an associated sense amplifier, each pair comprising a true master bitline extending on one side of the associated sense amplifier and a complementary master bitline extending on an opposite side of the associated sense amplifier; (iii) two local bitlines coupled to memory cells on each side of the sense amplifier, each local bitline being selectively coupled to the associated sense amplifier, with at least one of the two local bitlines being selectively coupled to the associated sense amplifier via a master bitline; wherein length of each master bitline is shorter than a column length, master bitline pitch is about twice local bitline pitch, and master bitlines are arranged in an interleaved configuration.

Claim 19

A semiconductor memory, comprising a plurality of memory cells arranged in rows and columns for storing data, each column having at least one sense amplifier with a reference cell associated therewith for providing a reference voltage, a master bitline operatively coupled to the sense amplifier on a first side thereof, two local bitlines on said first side of the sense amplifier coupled to memory cells and selectively coupled to the sense amplifier, with at least one of the local bitlines selectively coupled to the sense amplifier via the master bitline wherein each master bitline has a length shorter than a column length, master bitline pitch is greater than local bitline pitch, and master bitlines are arranged in an interleaved configuration.

Claim 20

The semiconductor memory of claim 19 wherein each master bitline is about one half a column length of a memory cell column on one side of the sense amplifier, and the master bitlines are interleaved in alternating columns.

Claim 21

The semiconductor memory of claim 19 wherein master bitline pitch is about twice local bitline pitch.

Claim 22

The semiconductor memory of claim 19 wherein sense amplifiers are arranged in a shared configuration, with a first master bitline operatively coupled to said first side and a second master bitline operatively coupled to a second side thereof.

Claim 23

The semiconductor memory of claim 19 wherein a plurality of master bitlines are operatively coupled to one side of each of a plurality of sense amplifiers via a multiplexer.

Claim 24

The semiconductor memory of claim 23 wherein said plurality of sense amplifiers are arranged in a shared configuration, with a first multiplexer on the first side of each sense amplifier and a second multiplexer on a second side of each sense amplifier.