Formation of wiring for semiconductor device

Abstract

Abstract PURPOSE:To prevent the breakdown of a diffusion layer due to a titanium layer at the time of heat treatment, and to form a metallic wiring having excellent heat resistance and high reliability by shaping the titanium layer, an silicon layer, a titanium nitride layer and an Al alloy film onto a semiconductor element in the order and forming a four-layer structure wiring. CONSTITUTION:An silicon oxide film 3 is shaped onto a P-type silicon substrate 1, and openings are formed to the silicon oxide film 3 and N<+> diffusion layers 2 are shaped. A titanium layer 4, an silicon layer 5, a titanium nitride layer 6 and an Al alloy film 7 are formed through a sputtering method. The Al alloy film 7, the titanium nitride layer 6, the silicon layer 5 and the titanium layer 4 are patterned, and thermally treated. The titanium layer 4 mainly generates an silicification reaction with the amorphous silicon layer 5 in the heat treatment. Accordingly, even when the diffusion layer forms an ultra- shallow junction, the junction is not broken by the silicification reaction between the titanium layer 4 and the silicon substrate 1.

Inventors

• 👤 Yoshiaki Yamada
• 👤 義明 山田

Bibliographic Details