Photosemiconductor device

Abstract

Abstract PURPOSE:To contrive the miniaturization by the integration of a complex photo device, by crossing the double hetero structure in right angle with stripe and dividing into two by a groove which reaches an active layer to arrange electrodes for laser oscillation and deflection on one side and by providing a light receiver or light guide on the other side. CONSTITUTION:An N type GaAlAs layer 2, P or N type GaAs active layer 3 and P type GaAlAs confining layer 4 are successively provided on an N type GaAs substrate 1 being divided into two by a groove 8 which reaches the active layer 3. Electrodes for deflection 11, 13 are provided on a lateral direction of the confining layer 4, and electrodes 12 for laser oscillation on the active layer. The electrodes for laser oscillation and deflection are respectively insulated to form a structure with two symmetrical parts connected to external terminals via the groove 8 with one side for the luminous source and the other side for the light receiver. Thus, a photo functional device is integrated by the presence of the luminous source, deflector and light receiver on the same substrate.

Inventors

• 👤 Mitsuhiro Yano

Bibliographic Details