Semiconductor device

Abstract

Abstract PURPOSE:To increase the reliability of wiring by reducing a step difference in the surface of a substrate and to obtain a fine pattern as well by a method wherein an interlayer insulating film is composed by using a semiconductor amorphous material in a semiconductor device and a part of the film is made as a conductor to provide a contact region. CONSTITUTION:A channel stopper region 2 is formed around an Si substrate 1 and the upper part of the region 2 is covered with a thick field oxide film 3 to form a thin gate oxide film 4 at the central part of the substrate 1 surrounded by the film 3 and a gate electrode 5 consisting of polycrystalline Si is provided on the film 4. Next, the electrode 5 is used as a mask and source and drain regions 6 are formed in self alignment manner by diffusion or ion implantation, and the electrde 5 is made low in resistance and an amorphous Si film 71 is grown on the whole surface by using silane tatra fluoride. Then, the surface of the film 71 is covered with an Si3N4 film 72 to perforate an opening by corresponding to the region 6 and the electrode 5 and low resistance contact regions 73 connected to the region 6 and the elctrode 5 are grown in the film 71 by implanting impurity ions and each Al electrode 9 is deposited on the surface of a region 73.

Inventors

• 👤 Nobuhiro Endo

Bibliographic Details