Fine processing method of thin film

Abstract

Abstract PURPOSE:To attain the patterning of a thin film requiring no remover liquid whose acidity and basicity affect other objects and capable of lifting said film although the film thickness of a metallic layer is increased, by forming a pattern thin film on said metallic layer containing a metal having a low melting point and a low boiling point. CONSTITUTION:A metallic layer 6 of a low melting point and a low boiling point is previously formed on a substrate or a base film 5 by a mask vapor deposition process, a mask thermal spray process or a plating process, etc. In this case, an etching process is also applied when necessary. Then a thick film 7 for patterning is formed on the layer 6 by various types of film producing processes. The substrate is heated up to a level higher than the melting and boiling points of the layer 6 after the film 7 is formed. Otherwise only the layer 6 is heated up to a level higher than its melting and boiling points by a high-frequency induction heating process. Thus the film 7 is processed minutely with the pressure of the layer 6 which is gasified. Thus a desired film undergoes patterning. In this case, it is possible to increase previously the film thickness of the layer 6 up to a sufficient level. Therefore the patterning is easy for the desired film.

Inventors

• 👤 Yuji Komata
• 👤 雄二 小俣
• 👤 Nobumasa Kaminaka
• 👤 紙中　伸征

Bibliographic Details