Manufacture of semiconductor laser device

Abstract

Abstract PURPOSE:To reduce optical output fluctuation due to reflecting light and improve mass productivity by a method wherein a current blocking layer is provided on an optical guide layer to perform current strangulation and lateral mode control simultaneously in the horizontal direction on the junction surface while periodical irregularities are provided on the optical guide layer to form a diffraction grid. CONSTITUTION:A clad layer 2, an undope active layer 3, an optical guide layer 4 and a current blocking layer 5 are successively grown to be formed on an N- GaAs substrate 1. Firstly the current blocking layer 5 is coated with photoresist which is exposed to form a stripe pattern. Secondly the current blocking layer 5 is etched utilizing the photoresist as a mask to form periodical irregularities 12 on the current blocking layer 5. Successively, a striped groove 11 is formed on the current blocking layer 5 utilizing the photoresit as a mask in the direction wherein said periodical irregularities intersect at right angles in the direction of stripe. Finally, the photoresist is removed and a clad layer 6 and a contact layer 7 are successively grown to be formed on overall surface. Later the contact layer 7 is coated with an electrode 8 while the lower surface of the substrate 1 is also coated with another electrode.

Inventors

• 👤 Masasue Okajima
• 👤 岡島　正季
• 👤 Naoto Mogi
• 👤 茂木　直人

Bibliographic Details