Method of ion beam deposition

Abstract

Abstract PURPOSE:To enable the drawing and formation of a dielectric film consisting of an oxide film or a nitride film into a linear form by forming a compound atmosphere on a surface of a sample and projecting an electron beam or an ion beam to the sample surface through said compound atmosphere. CONSTITUTION:A sample 2 is put on a sample table 1 in a vacuum container and a compound gas 4 is supplied from a nozzle 3 to a surface of the sample 2 which is irradiated with an ion beam 5 to form a dielectric film 6. For example, if the compound gas 4 is Al(OC2H5)3 and the energy beam 5 is an Ar ion beam or an electron beam, the dielectric film 6 becomes an Al2O3 film. Also if the compound gas 4 is SiH4 and the ion beam 5 is nitrogen ion beam, the dielectric film 6 becomes an Si3N7 film. When using an oxygen ion beam, the film 6 becomes an SiO2 film. Furthermore, if the ion beam 5 is an In ion beam and the gas 4 is oxygen gas, the film 6 becomes an indium oxide film.

Inventors

• 👤 Seiichi Iwamatsu
• 👤 誠一 岩松

Bibliographic Details