Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the impurities in a channel stopper region from diffusing near the surface of the active region of a MOS transistor, by forming an oxide film to be an element isolation region on a semiconductor substrate followed by introducing the impurities from above this oxide film into the semiconductor substrate by an ion implantation method. CONSTITUTION:An oxide film 4 to be an element isolation region is formed on a semiconductor substrate 1 followed by introducing impurities from above the oxide film 4 by an ion implantation method. Accordingly, the high doped part to be a channel stopper is located near the interface between an element isolation oxide film and the semiconductor substrate 1 in the element isolation region, while being generated in the deep part of the semiconductor substrate 1 in the active region of a MOS transistor, and these impurities are not diffused up to the vicinity of the surface of the active region. Thereby, while keeping an effect of a former channel stopper, a narrow channel effect of the MOS transistor is prevented from being generated.

Inventors

• 👤 Masahiro Takeuchi
• 👤 正浩 竹内

Bibliographic Details