Fused junction semiconductor devices and method of making same

Claim 1

THE METHOD OF PRODUCING A FUSED JUNCTION TRANSISTOR BY CONVERTING TO ONE CONDUCTIVITY TYPE TWO SPACED REGIONS OF AN ACTIVE IMPURITY-DOPED SEMICONDUCTOR STARTING SPECIMEN SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON OF THE OPPOSITE CONDUCTIVITY TYPE, SAID METHOD COMPRISING THE STEPS OF: DIRECTING A STREAM OF ABRASIVE TO IMPINGE UPON AT LEAST A PORTION OF ONE SURFACE OF SAID SPECIMEN, EFFECTING RELATIVE DISPLACEMENT BETWEEN SAID STREAM OF ABRASIVE AND SAID SPECIMEN TO THEREBY ABRADE AT LEAST SAID PORTION OF SAID SURFACE AND FORM A SUBSTANTIALLY FLAT-BOTTOMED RECESS OF A PREDETERMINED DEPTH IN SAID SPECIMEN, PLACING TWO ALLOY PELLETS EACH INCLUDING AN ACTIVE IMPURITY OF SAID ONE CONDUCTIVITY TYPE IN CONTACT WITH OPPOSITE SURFACES OF THE SPECIMEN, ONE OF SAID PELLETS BEING PLACED IN THE RECESS IN SAID SPECIMEN, HEATING THE COMBINATION OF THE SPECIMEN AND THE PELLETS TO A TEMPERATURE ABOVE THE MELTING POINT OF THE PELLETS, BUT BELOW THE MELTING POINT OF SAID SEMICONDUCTOR SPECIMEN, TO MELT THE PELLETS AND DISSOLVE A PREDETERMINED AMOUNT OF THE ADJACENT PORTIONS OF SAID SPECIMEN, AND COOLING THE COMBINATION AT A CONTROLLED RATE TO REGROW A PORTION OF THE DISSOLVED SEMICONDUCTOR MATERIAL TOGETHER WITH ATOMS OF SAID IMPURITY OF SAID ONE CONDUCTIVITY TYPE AS TWO SPACED REGIONS ON OPPOSITE SIDES OF SAID SPECIMEN.