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US3010797A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High purity elemental silicon
Assignee: Individual
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Filing: 1957-07-26
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Granted: 1961-11-28
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Expires: 1977-07-26
Abstract
No abstract record available.
Inventors
- 👤 Robert S Aries
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 23:18
CPC Classifications
C; C01; C01B; C01B33/00; C01B33/02; C01B33/021; C01B33/027; C01B33/113
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
120 words
A METHOD FOR THE PRODUCTION OF VERY HIGH PURITY SILICON WHICH COMPRISES REACTING SILICON AND SILICA AT A TEMPERATURE BETWEEN 1200*C. AND 1400*C. UNDER HIGH VACUUM CORRESPONDING TO AN ABSOLUTE PRESSURE NOT GREATER THAN 0.01 MM. MERCURY TO FORM HIGH PURITY SILICON MONOXIDE, REDUCING A PORTION OF THE SILICON MONOXIDE WITH AN EXCESS OF HYDROGEN OVER THE STOICHIOMETRIC AMOUNT REQUIRED FOR REDUCTION, SAID HYDROGEN BEING DIFFUSED THROUGH THE WALLS OF A PALLADIUM TUBE AT A PRESSURE BETWEEN ABOUT 5 AND ABOUT 20 ATMOSPHERES, TO FORM HIGH PURITY ELEMENTAL SILICON, AND RECOVERING THE PURE MONOXIDE WITH OXYGEN TO FORM HIGH PURITY SILICON DIOXIDE, AND RECYCLING SAID SILICON DIOXIDE AND REACTING IT WITH SILICON IN THE FIRST STEP TO FORM SILICON MONOXIDE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-11-27 | 1965-05-29 | 1965-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-11-27 | 1969-05-29 | 1969-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-11-27 | 1973-05-29 | 1973-11-28 | $7700.00 | Window Closed / Lapsed |