Method of producing single crystal silicon

Claim 1

A METHOD OF PRODUCING SINGLE CRYSTAL SILICON, CONSISTING OF THE STEPS OF CONTCTING A CARRIER BODY OF SINGLE CRYSTAL SILICON WITH A STREAM OF REACTION GAS ADAPTED AT ELEVATED TEMPERATURE FOR THE SEPARATION OF ELEMENTARY SILICON THEREFROM, HEATING SAID CARRIER BODY BY ELECTRIC CURRENT CONDUCTED THERETHROUGH TO A TEMPERATURE AT WHICH ELEMENTARY SILICON FROM THE REACTION GAS IS PRECIPITATED UPON THE SOLID SURFACE PARTS OF SUCH CARRIER BODY AND CRYSTALLIZING TO SUCH SURFACE PARTS, SUPPLYING TO SAID REACTION GAS AS AN ACTIVE INGREDIENT A HALOGEN SILANE, ADDING A GASEOUS HYDROGEN HALIDE TO THE REACTION GAS PRIOR TO THE CONTACTING THEREOF WITH SAID CARRIER BODY, BEATING THE LATTER DURING THE SEPARATION PROCEDURE TO THE SEPARATION TEMPERATURE, ADJUSTING THE CARRIER TO A SELECTED TEMPERATURE AT WHICH SILICON IS SEPARATED FROM THE REACTION GAS WITH THE TEMPERATURE BEING SUCH THAT SEPARATION OF SILICON WILL BE COMPLETELY INTERRUPTED UPON DROPPING OF THE CARRIER TEMPERATURE TO AT MOST 200*C. BELOW THE SELECTED SEPARATION TEMPERATURE AND UPON FURTHER DROPPING THE CARRIER TEMPERATURES SILICON OF THE CARRIER BODY WILL BE DISSOLVED BY THE REACTION GAS.

Claim 2

A METHOD OF PRODUCING SINGLE CRYSTAL SILICON, CONSISTING OF THE STEPS OF CONTCTING A CARRIER BODY OF SINGLE CRYSTAL SILICON WITH A STREAM OF REACTION GAS ADAPTED AT ELEVATED TEMPERATURE FOR THE SEPARATION OF ELEMENTARY SILICON THEREFROM, HEATING SAID CARRIER BODY BY ELECTRIC CURRENT CONDUCTED THERETHROUGH TO A TEMPERATURE AT WHICH ELEMENTARY SILICON FROM THE REACTION GAS IS PRECIPITATED UPON THE SOLID SURFACE PARTS OF SUCH CARRIER BODY AND CRYSTALLIZING TO SUCH SURFACE PARTS, SUPPLYING TO SAID REACTION GAS AS AN ACTIVE INGREDIENT A HALOGEN SILANE, ADDING A GASEOUS HYDROGEN HALIDE TO THE REACTION GAS PRIOR TO THE CONTACTING THEREOF WITH SAID CARRIER BODY, BEATING THE LATTER DURING THE SEPARATION PROCEDURE TO THE SEPARATION TEMPERATURE, ADJUSTING THE CARRIER TO A SELECTED TEMPERATURE AT WHICH SILICON IS SEPARATED FROM THE REACTION GAS WITH THE TEMPERATURE BEING SUCH THAT SEPARATION OF SILICON WILL BE COMPLETELY INTERRUPTED UPON DROPPING OF THE CARRIER TEMPERATURE TO AT MOST 200*C. BELOW THE SELECTED SEPARATION TEMPERATURE AND UPON FURTHER DROPPING THE CARRIER TEMPERATURES SILICON OF THE CARRIER BODY WILL BE DISSOLVED BY THE REACTION GAS.