Patent US3255055A successfully refreshed from Google Patents.
US3255055A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Hoffman Electronics Corp
•
Filing: 1963-03-20
•
Granted: 1966-06-07
•
Expires: 1983-03-20
Abstract
No abstract record available.
Inventors
- 👤 Ross Bernd
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 05:47
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/104; Y; Y10; Y10S; Y10S148/00; Y10S148/054; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
79 words
THE PROCESS FOR PRODUCING A P-N JUNCTION SEMICONDUCTOR DEVICE WITH IMPROVED PEAK-INVERSE VOLTAGE CHARACTERISTICS COMPRISING DIFFUSING IMPURITY ATOMS OF A FIRST CONDUCTIVITY TYPE INTO A WAFER OF SEMICONDUCTOR MATERIAL OF THE OPPOSITE CONDUCTIVITY TYPE TO FORM A P-N JUNCTION EXTENDING TO AND INTERCEPTING THE PERIPHERAL SURFACE OF SAID WAFER AND LAPPING THE ENTIRELY OF THE PERIPHERAL SURFACE OF THE WAFER CONTAINING THE SURFACE-JUNCTION INTERCEPT UNTIL IT INTERSECTS THE PLANE OF THE JUNCTION AT AN ANGLE SUBSTANTIALLY LESS THAN 90*.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-06-06 | 1969-12-06 | 1970-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-06-06 | 1973-12-06 | 1974-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-06-06 | 1977-12-06 | 1978-06-07 | $7700.00 | Window Closed / Lapsed |