Patent US3274461A successfully refreshed from Google Patents.
US3274461A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High frequency and power field effect transistor with mesh-like gate structure
Assignee: Individual
•
Filing: 1962-12-11
•
Granted: 1966-09-20
•
Expires: 1982-12-11
Abstract
No abstract record available.
Inventors
- 👤 Teszner Stanislas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:19
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/83; H10D30/831; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/018; Y10S148/043; Y10S148/053; Y10S148/145
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
124 words
A FIELD-EFFECT TRANSLATING DEVICE COMPRISING A SEMICONDUCTOR PLATE HAVING TWO PARALLEL GREAT FACES INCLUDING A FIRST ZONE OF A GIVEN CONDUCTIVITY TYPE CONTIGUOUS WITH THE FIRST FACE THEREOF, A SECOND ZONE HAVING FIRST PORTIONS OF THE TYPE OF CONDUCTIVITY OPPOSITE TO SAID GIVEN CONDUCTIVITY TYPE FORMED BY A FIRST IMPURITY OF SAID OPPOSITE TYPE OF CONDUCTIVITY AND LARGE DIFFUSION COEFFICIENT DIFFUSED FROM SAID SECOND FACE AND UNALTERED SECOND PORTIONS OF SAID GIVEN TYPE OF CONDUCTIVITY, SAID FIRST AND SECOND PORTIONS RESPECTIVELY FORMING MESH-LIKE CHANNELS AND A WIRE-LIKE GATE, A THIRD ZONE GENERALLY OF SAID GIVEN TYPE OF CONDUCTIVITY HAVING FIRST PORTIONS ADJACENT SAID WIRELIKE GATE, HEAVILY DOPED IN SAID GIVEN TYPE AND FORMED BY A SECOND IMPURITY OF SAID GIVEN TYPE OF CONDUCTIVITY AND
Claim 2
Dependent Claim
124 words
A FIELD-EFFECT TRANSLATING DEVICE COMPRISING A SEMICONDUCTOR PLATE HAVING TWO PARALLEL GREAT FACES INCLUDING A FIRST ZONE OF A GIVEN CONDUCTIVITY TYPE CONTIGUOUS WITH THE FIRST FACE THEREOF, A SECOND ZONE HAVING FIRST PORTIONS OF THE TYPE OF CONDUCTIVITY OPPOSITE TO SAID GIVEN CONDUCTIVITY TYPE FORMED BY A FIRST IMPURITY OF SAID OPPOSITE TYPE OF CONDUCTIVITY AND LARGE DIFFUSION COEFFICIENT DIFFUSED FROM SAID SECOND FACE AND UNALTERED SECOND PORTIONS OF SAID GIVEN TYPE OF CONDUCTIVITY, SAID FIRST AND SECOND PORTIONS RESPECTIVELY FORMING MESH-LIKE CHANNELS AND A WIRE-LIKE GATE, A THIRD ZONE GENERALLY OF SAID GIVEN TYPE OF CONDUCTIVITY HAVING FIRST PORTIONS ADJACENT SAID WIRELIKE GATE, HEAVILY DOPED IN SAID GIVEN TYPE AND FORMED BY A SECOND IMPURITY OF SAID GIVEN TYPE OF CONDUCTIVITY AND
References Cited (Backward Citations)
US3025438A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-09-19 | 1970-03-21 | 1970-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-09-19 | 1974-03-21 | 1974-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-09-19 | 1978-03-21 | 1978-09-20 | $7700.00 | Window Closed / Lapsed |